Fundamental origin of excellent low-noise property in 3D Si-MOSFETs &amp;#x223C; Impact of charge-centroid in the channel due to quantum effect on 1/f noise &amp;#x223C;

Feng, Wei; Hettiarachchi, R.; Lee, Y.; Sato, Setsuko; Kakushima, Kuniyuki; Sato, Masaki; Fukuda, K.; Niwa, Miki; Yamabe, Kikuo; Shiraishi, Kenji; Ohmori, Kenji

doi:10.1109/iedm.2011.6131627

Cited by 20 publications

(18 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In nanoscale MOSFETs, the number of traps in a device is small and some Lorentzian components become visible as in Fig. 4(a) [22,23]. Note that Lorentzian components below 10 MHz do not usually affect the shape of Id ( ) above 100 MHz because each of them drops with 1 2 ⁄ .…”

Section: Resultsmentioning

confidence: 99%

Direct white noise characterization of short-channel MOSFETs

Ohmori¹,

Amakawa²

2021

Preprint

View full text Add to dashboard Cite

On-wafer evaluation of white thermal and shot noise in nanoscale MOSFETs is demonstrated by directly sensing the drain current under zero- and nonzsero-drain-bias (Vd) conditions for the first time, without recourse to a hot noise source, commonly needed in noise figure measurement. The dependence of white noise intensity on the drain bias clearly shows thermal noise at Vd=0 V and shot noise at Vd>0 V with its gate-bias-dependent suppression. An empirical expression for the Fano factor (shot-noise suppression factor) that is well-behaved even at Vd=0V exactly and suitable for measurement-based evaluation is proposed. The direct measurement approach could allow more accurate and predictive noise modeling of RF MOSFETs than has conventionally been possible.

show abstract

Section: Resultsmentioning

confidence: 99%

Direct white noise characterization of short-channel MOSFETs

Ohmori¹,

Amakawa²

2021

Preprint

View full text Add to dashboard Cite

show abstract

“…In nanoscale MOSFETs, the number of traps in a device is small and some Lorentzian components become visible as in Fig. 4(a) [24], [25]. Such outlying components manifest themselves in the time domain as random telegraph noise (RTN).…”

Section: Resultsmentioning

confidence: 99%

Direct White Noise Characterization of Short-Channel MOSFETs

Ohmori¹,

Amakawa²

2021

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

On-wafer evaluation of white thermal and shot noise in nanoscale MOSFETs is demonstrated by directly sensing the drain current under zero-and nonzerodrain-bias (V d) conditions for the first time, without recourse to a hot noise source, commonly needed in noise figure measurement. The dependence of white noise intensity on the drain bias clearly shows thermal noise at V d = 0 V and shot noise at V d > 0 V with its gate-bias-dependent suppression. An empirical expression for the Fano factor (shot-noise suppression factor) that is well-behaved even at V d = 0 V exactly and suitable for measurement-based evaluation is proposed. The direct measurement approach could allow more accurate and predictive noise modeling of RF MOSFETs than has conventionally been possible.

show abstract

“…We have used planar-type n-FETs with a poly-Si/high-k gate stack structure for the characterization [8]. The HfO 2 gate dielectric film with a 0.8-nm-thick SiO 2 interfacial layer was adopted for the gate-stack structure.…”

Section: Methodsmentioning

confidence: 99%

Random telegraph noise induced drain-current fluctuation during dynamic gate bias in Si MOSFETs

Feng

Yamada

Ohmori

2013

2013 22nd International Conference on Noise and Fluctuations (ICNF)

Self Cite

View full text Add to dashboard Cite

The influence of random telegraph noise (RTN) in MOSFETs on drain current (I d ) during transition edge of pulse gate voltage (V g ) was investigated. The I d fluctuation under dynamic V g was larger than that under dc bias by a factor of 2.2. We have revealed that the initial trap occupation states before varying V g significantly affect the I d values during the transition edge of dynamic V g . The trap occupation states were governed by the initial time and the profiles of RTN, e.g., the distribution of time constant (τ c and τ e ). The I d fluctuation under dynamic V g can be controlled according to the profiles of RTN. These results provide useful information for designing an ultra-high speed circuit.

show abstract

Fundamental origin of excellent low-noise property in 3D Si-MOSFETs ∼ Impact of charge-centroid in the channel due to quantum effect on 1/f noise ∼

Cited by 20 publications

References 5 publications

Direct white noise characterization of short-channel MOSFETs

Direct white noise characterization of short-channel MOSFETs

Direct White Noise Characterization of Short-Channel MOSFETs

Random telegraph noise induced drain-current fluctuation during dynamic gate bias in Si MOSFETs

Contact Info

Product

Resources

About