Fundamental Materials Research and Advanced Process Development for Thin-Film CIS-Based Photovoltaics: Final Technical Report, 2 October 2001 - 30 September 2005

Anderson, Thomas; Li, S. S.; Crisalle, O.D.; Crăciun, V.

doi:10.2172/891600

Cited by 4 publications

(3 citation statements)

References 7 publications

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“…This indicated that the poor device performance could be due to the laser pulse also causing damage in the CIGSe/CdS interface region. Increasing the pulse number to 10 or 20 pulses 93 also showed similar improvements in Hall mobility. However, device measurements revealed that only the lowest laser fluence (30 mJ cm −2 ) led to an efficiency increase over the 9.1% efficient reference device.…”

Section: Pulsed Laser Annealingmentioning

confidence: 64%

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Laser processing for thin film chalcogenide photovoltaics: a review and prospectus

et al. 2015

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Abstract. We review prior and on-going works in using laser annealing (LA) techniques in the development of chalcogenide-based [CdTe and CuðIn; GaÞðS; SeÞ 2 ] solar cells. LA can achieve unique processing regimes as the wavelength and pulse duration can be chosen to selectively heat particular layers of a thin film solar cell or even particular regions within a single layer. Pulsed LA, in particular, can achieve non-steady-state conditions that allow for stoichiometry control by preferential evaporation, which has been utilized in CdTe solar cells to create Ohmic back contacts. Pulsed lasers have also been used with CuðIn; GaÞðS; SeÞ 2 to improve device performance by surface-defect annealing as well as bulk deep-defect annealing. Continuouswave LA shows promise for use as a replacement for furnace annealing as it almost instantaneously supplies heat to the absorbing film without wasting time or energy to bring the much thicker substrate to temperature. Optimizing and utilizing such a technology would allow production lines to increase throughput and thus manufacturing capacity. Lasers have also been used to create potentially low-cost chalcogenide thin films from precursors, which is also reviewed. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Section: Pulsed Laser Annealingmentioning

confidence: 64%

“…The first published studies of sub-melt PLA of CISe were carried out by the group of Anderson, [93][94][95] which used co-evaporated CuðIn; GaÞSe 2 absorbers as pictured in Fig. 7b(i) with a CdS buffer layer deposited on the surface.…”

Section: Pulsed Laser Annealingmentioning

confidence: 99%

Laser processing for thin film chalcogenide photovoltaics: a review and prospectus

et al. 2015

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“…We consider that the reaction of these binary or elemental phases is thermodynamically favoured and leads to an improved recrystallization during annealing and therefore results in larger crystals. The approach of forming CuInSe 2 by annealing binary selenides has also followed by Anderson and coworkers (5)(6)(7)(8). They grow InSe/CuSe and In 2 Se 3 /CuSe stacks by migration enhanced epitaxy and perform insitu XRD measurements to study the reaction path.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Characterization of CuInSe₂ Thin Films by Annealing of Electrodeposited In₂Se₃/Cu and In₂Se₃/Cu_xSe_y Stacks

2010

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CuInSe2 (CIS) thin films were successfully formed by annealing of electrodeposited In2Se3/CuxSey and In2Se3/Cu stacks. Conditions for the uniform and stoichiometric electrodeposition of In2Se3, Cu, and CuxSey thin layers are presented. Phase evolution during the annealing is studied by XRD for several temperatures. SEM cross sections show recrystallization during annealing for the copper selenide containing precursor. The photoelectrochemical response of the absorber is weaker compared to coelectrodeposited CIS and requires further improvement.

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Composition dependent characterization of copper indium diselenide thin film solar cells synthesized from electrodeposited binary selenide precursor stacks

Fischer

Larsen

Guillot³

et al. 2014

Solar Energy Materials and Solar Cells

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Fundamental Materials Research and Advanced Process Development for Thin-Film CIS-Based Photovoltaics: Final Technical Report, 2 October 2001 - 30 September 2005

Cited by 4 publications

References 7 publications

Laser processing for thin film chalcogenide photovoltaics: a review and prospectus

Laser processing for thin film chalcogenide photovoltaics: a review and prospectus

Synthesis and Characterization of CuInSe₂ Thin Films by Annealing of Electrodeposited In₂Se₃/Cu and In₂Se₃/Cu_xSe_y Stacks

Composition dependent characterization of copper indium diselenide thin film solar cells synthesized from electrodeposited binary selenide precursor stacks

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Fundamental Materials Research and Advanced Process Development for Thin-Film CIS-Based Photovoltaics: Final Technical Report, 2 October 2001 - 30 September 2005

Cited by 4 publications

References 7 publications

Laser processing for thin film chalcogenide photovoltaics: a review and prospectus

Laser processing for thin film chalcogenide photovoltaics: a review and prospectus

Synthesis and Characterization of CuInSe2 Thin Films by Annealing of Electrodeposited In2Se3/Cu and In2Se3/CuxSey Stacks

Composition dependent characterization of copper indium diselenide thin film solar cells synthesized from electrodeposited binary selenide precursor stacks

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Synthesis and Characterization of CuInSe₂ Thin Films by Annealing of Electrodeposited In₂Se₃/Cu and In₂Se₃/Cu_xSe_y Stacks