2009
DOI: 10.1016/j.precisioneng.2008.10.008
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Fundamental investigation of subsurface damage in single crystalline silicon caused by diamond machining

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Cited by 223 publications
(86 citation statements)
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“…Figure 13a shows the simulation results which were obtained by post-processing of the MD trajectories using the dislocation extraction algorithm (DXA). It was anticipated that dislocation nucleation might occur during the process of nanometric cutting [41], but no dislocations were found to travel ahead of the tool that will drive plasticity in silicon (this is possible due to scale limitations of the MD) since experimental studies reported presence of several type of dislocations in contrast to what is observed here [51,52]. Careful examination of the simulation video showed some ¼<111> partial dislocations in the sub-surface and not in the cutting zone.…”
Section: Structural Transformations and Mechanism Of Ductility In Silmentioning
confidence: 92%
“…Figure 13a shows the simulation results which were obtained by post-processing of the MD trajectories using the dislocation extraction algorithm (DXA). It was anticipated that dislocation nucleation might occur during the process of nanometric cutting [41], but no dislocations were found to travel ahead of the tool that will drive plasticity in silicon (this is possible due to scale limitations of the MD) since experimental studies reported presence of several type of dislocations in contrast to what is observed here [51,52]. Careful examination of the simulation video showed some ¼<111> partial dislocations in the sub-surface and not in the cutting zone.…”
Section: Structural Transformations and Mechanism Of Ductility In Silmentioning
confidence: 92%
“…In diamond cutting of single crystalline silicon, there is a machininginduced subsurface damage exhibiting four features of amorphization, poly-crystallization, dislocation, and internal microcracking [52,53]. Near crack free-surface is transformed into an amorphous phase above a dislocation layer, which is mainly caused by the high compressive stress in the cutting zone [52].…”
Section: Subsurface Damagementioning
confidence: 99%
“…7a the saffron yellow curve, which suggest the deformation degree in silicon is related to the depth of cut. This phenomenon is presumably aroused by the non-uniform distribution of stress which offered by the plastic deformation of dislocations [33,34]. Under the effect of the anisotropic stress of Si threefold degeneracy phonon modes at Brillouin zone q = 0 was broken, resulting in the split of different phonon frequencies.…”
Section: Raman Spectroscopy Analysis Of Rb-sicmentioning
confidence: 99%