Fundamental considerations of carbonyl metallurgy

Carlton, H. E.; Goldberger, W. M.

doi:10.1007/bf03378366

Cited by 6 publications

(5 citation statements)

References 6 publications

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“…LH-type models have also been applied to the deposition of Ni, Fe, W, and Mo using metal carbonyl (M(CO) x ) precursors and in all cases a significant inhibition effect due to CO adsorption is found. [20,21] It is possible that acetylacetone, acetaldehyde, or CO absorption is also involved in our process but at present there is no further evidence.…”

Section: +mentioning

confidence: 98%

Synthesis of Pyrite (FeS2) Thin Films by Low-Pressure MOCVD

Meester¹,

Reijnen²,

Goossens³

et al. 2000

Chem. Vap. Deposition

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Thin films of iron disulfide have been prepared by low-pressure CVD (LPCVD) from iron(III) acetylacetonate (Fe(acac) 3 ), tert-butyldisulfide (TBDS), and hydrogen. The influence of the relevant CVD parameters on the growth rate, chemical composition (stoichiometry), morphology, crystalline phases, and contaminants has been examined. Pyrite thin films with a uniformity variation of less than 5 % over a length of 10 cm are obtained in a hot-wall LPCVD reactor. The present study shows that these films are deposited without detectable iron sulfide (FeS) phases at temperatures from 300 C up to 340 C on glass and silicon substrates. Growth rates vary between 0.2 nm min ±1 and 12 nm min ±1 . In all cases, the films are polycrystalline pyrite with an indirect bandgap of 0.95 ± 0.05 eV, and a dark specific resistance of 0.5±1.0 W cm. The absorption coefficient of the films is 3 ± 1´10 5 cm ±1 at l = 500 nm.

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Section: +mentioning

confidence: 98%

Synthesis of Pyrite (FeS2) Thin Films by Low-Pressure MOCVD

Meester¹,

Reijnen²,

Goossens³

et al. 2000

Chem. Vap. Deposition

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“…[2] to be a likely source of carbon in the films, theoretically should be reversed by an increase in concentration of CO2. As in the case of water, however, too much CO2 can constitute an oxidizing atmosphere and react with the depositing metal M, according to the reaction M + 3 CO2 -----M:O3 + 3 CO [9] It was to be expected then that pure CO2 carrier gas would lead to large resistivities. A mixture of CO2 and H2 might minimize both oxide and carbon impurities.…”

Section: Substitution O] Argon or Carbon Dioxide ]Or Hydrogenmentioning

confidence: 99%

The Deposition of Molybdenum and Tungsten Films from Vapor Decomposition of Carbonyls

Kaplan¹,

d’Heurle²

1970

J. Electrochem. Soc.

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Molybdenum and tungsten films formed by the pyrolytic decomposition of the respective carbonyls were investigated to determine their usefulness as conductors in microcircuit devices. The relations between deposition variables (such as pressure of carbonyls, pressure of the carrier gas, rate of gas flow, and substrate temperature) and deposition parameters (such as rate of film growth) or film properties (such as resistivity) were studied. The effects of carrier gas substitution on molybdenum film resistivity were determined. At a carbonyl pressure of 0.001 Torr, a hydrogen pressure of 0.01 Torr, a gas flow of 12 std cc/min, and a substrate temperature of 500°C, molybdenum films were deposited with a resistivity close to that of bulk (5.6 µohm cm), at a rate of 3.7 Aå/sec. In molybdenum films deposited at lower substrate temperatures the resistivity increased, presumably because of increased carbon within the films. The resistivity of tungsten film is always greater than the resistivity of Mo films deposited under equivalent conditions. The lowest resistivity achieved in a tungsten film was approximately twice the value for bulk tungsten (5.5 µohm cm). The structures of both molybdenum and tungsten films deposited under conditions that favored the formation of films with the lowest resistivities were examined by x‐ray diffraction as well as replica electron microscope techniques. Measured lattice parameters, when corrected for independently determined stress, were approximately equal to the parameters reported for pure molybdenum and tungsten. In all tungsten films studied, tensile stresses were found, but in molybdenum films the stresses were tensile for substrate temperatures greater than 500°C and compressive for lower temperatures.

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“…Others, like Maruizume et al, have shown that competitive adsorption of the precursor and reaction product limits the conformity of films deposited in trenches. Finally, CO is known to limit the growth rate by blocking active surface sides for precursor molecules . Cohen et al have shown that the thd ligand adsorbs at metallic surfaces and can only be removed by a reducing agent such as H 2 .…”

Section: Resultsmentioning

confidence: 99%

“…Finally, CO is known to limit the growth rate by blocking active surface sides for precursor molecules. 21 Cohen et al 22 have shown that the thd ligand adsorbs at metallic surfaces and can only be removed by a reducing agent such as H 2 . Haukka et al 23 report that Hthd adsorbs at OH groups at an oxide surface.…”

Section: Resultsmentioning

confidence: 99%

Chemical Vapor Deposition of Cu_xS: Surface Contamination by Reaction Products

et al. 2005

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Thin films of Cu x S are grown by chemical vapor deposition using Cu(thd)2 (thd = tetramethylheptanedionate), H2S, and H2 as the precursors. A deposition profile, not caused by depletion of the precursors, is present in all films. Hydrogen is needed for growth to occur; in atomic layer deposition of Cu x S the reaction between Cu(thd)2 and H2S does not require H2. To explain these observations, a model is derived on the basis of competitive adsorption of Cu(thd)2 and the reaction product Hthd at the surface. With numerical calculations, the growth rate, the Cu(thd)2 concentration, and the Hthd concentration as a function of the flow axis can be simulated. A deposition profile due to competitive adsorption of Cu(thd)2 and Hthd is found.

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Fundamental considerations of carbonyl metallurgy

Cited by 6 publications

References 6 publications

Synthesis of Pyrite (FeS2) Thin Films by Low-Pressure MOCVD

Synthesis of Pyrite (FeS2) Thin Films by Low-Pressure MOCVD

The Deposition of Molybdenum and Tungsten Films from Vapor Decomposition of Carbonyls

Chemical Vapor Deposition of Cu_xS: Surface Contamination by Reaction Products

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Fundamental considerations of carbonyl metallurgy

Cited by 6 publications

References 6 publications

Synthesis of Pyrite (FeS2) Thin Films by Low-Pressure MOCVD

Synthesis of Pyrite (FeS2) Thin Films by Low-Pressure MOCVD

The Deposition of Molybdenum and Tungsten Films from Vapor Decomposition of Carbonyls

Chemical Vapor Deposition of CuxS: Surface Contamination by Reaction Products

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Chemical Vapor Deposition of Cu_xS: Surface Contamination by Reaction Products