Functionalizing graphene by embedded boron clusters

Abstract

We present a model system that might serve as a blueprint for the controlled layout of graphene based nanodevices. The systems consists of chains of B(7) clusters implanted in a graphene matrix, where the boron clusters are not directly connected. We show that the graphene matrix easily accepts these alternating B(7)-C(6) chains and that the implanted boron components may dramatically modify the electronic properties of graphene based nanomaterials. This suggests a functionalization of graphene nanomaterials, where the semiconducting properties might be supplemented by parts of the graphene matrix itself, but the basic wiring will be provided by alternating chains of implanted boron clusters that connect these areas.

Unveiling the Atomic Structure of Single‐Wall Boron Nanotubes

“…Besides the metallic sheets and nanotubes there is a growing body of literature on semi‐conducting boron nanostructures that are probably related to the known bulk crystal structures . These developments indicate the rise of a very promising branch of nanoscience based on boron nanostructures …”

“…[22][23][24][25][26] These developments indicate the rise of a very promising branch of nanoscience based on boron nanostructures. [ 26,27 ] Despite these early successes in the synthesis and characterization of BNTs, many questions on their structure and physical properties remain open and even their existence is still debated. In contrast to carbon or boron-nitride, boron does not form layered bulk structures and therefore the atomic structure of the walls of BNTs still needs to be determined experimentally.…”

Localization of metallicity and magnetic properties of graphene and of graphene nanoribbons doped with boron clusters

“…It is understood now that there should either be some translational symmetry breaking between edges in GNRs or some local sublattice imbalances in graphene/graphite to create localized states at E F to obtain a finite magnetic moment. Several approaches have been proposed, such as the introduction of vacancies [25][26][27][28][29][30], networks of point defects [31], impurities/chemical doping [29,[32][33][34][35][36][37][38][39][40][41][42][43][44][45][46][47][48][49][50][51], partial hydrogenation [52,53], edge roughness [54], electron or hole doping [55], or an applied electric field to introduce half-metallicity [56]. However, some recent studies also point out that the edge states and the associated edge magnetism might be either very weak, or absent, or even artefacts of improper theoretical methodology [57][58][59].…”

“…Another way of modulating and controlling the electronic properties of graphene is chemical doping, which was widely studied in the past [29,[32][33][34][35][36][37][38][40][41][42][45][46][47][48][49][50][51]. The synthesis of substitutionally doped graphene samples is presently reported in the literature, such as B-and N-doping by arc discharge [36], N-doping by chemical vapour deposition [38] methods, and doping with transition metals atoms [44].…”

“…We have previously reported that boron cluster can be easily accepted by graphene [35]. Ion beam methods can be utilized efficiently to dope boron into the graphene/graphite matrix, either as atomic sites [66,67] or as clusters [68].…”