Functionalized Graphitic Carbon Nitride for Metal-free, Flexible and Rewritable Nonvolatile Memory Device via Direct Laser-Writing

Abstract

Graphitic carbon nitride nanosheet (g-C3N4-NS) has layered structure similar with graphene nanosheet and presents unusual physicochemical properties due to the s-triazine fragments. But their electronic and electrochemical applications are limited by the relatively poor conductivity. The current work provides the first example that atomically thick g-C3N4-NSs are the ideal candidate as the active insulator layer with tunable conductivity for achieving the high performance memory devices with electrical bistability. Unlike in conventional memory diodes, the g-C3N4-NSs based devices combined with graphene layer electrodes are flexible, metal-free and low cost. The functionalized g-C3N4-NSs exhibit desirable dispersibility and dielectricity which support the all-solution fabrication and high performance of the memory diodes. Moreover, the flexible memory diodes are conveniently fabricated through the fast laser writing process on graphene oxide/g-C3N4-NSs/graphene oxide thin film. The obtained devices not only have the nonvolatile electrical bistability with great retention and endurance, but also show the rewritable memory effect with a reliable ON/OFF ratio of up to 105, which is the highest among all the metal-free flexible memory diodes reported so far, and even higher than those of metal-containing devices.

Laser ablation of molecular carbon nitride compounds

“…Recently, Bojdys and coworkers presented a crystalline triazine-based graphitic carbon nitride with very low hydrogen content (0.51 wt%) and a carbon-tonitrogen ratio close to the theoretical one for g-C 3 N 4 [15]. Owing to their optoelectronic properties, these polymers have nonetheless found potential applications, from light-induced catalysis including hydrogen evolution from water [16,17] to chemical sensing [18,19] and electronic devices [15,20]. Advancement in these applications hinges on the detailed characterization of their physical properties, which so far have been limited due to difficulties in material processing.…”

Freeform Compliant CMOS Electronic Systems for Internet of Everything Applications

“…Simplistic architecture and fast switching characteristics have attracted their applications in neuromorphic computations, for example, mimicking synaptic functions by combining CMOS neurons and memristors in cross-bar configuration [15]. Organic and flexible memristors with the highest retention of 5 × 10 6 at the cost of low endurance, switching speeds, and lowtemperature range are demonstrated [16]- [18]. Kim et al [19] demonstrated Si-based inorganic memristors transferred onto organic substrate showing reasonably moderate parameters with a very low yield (60-85%) and higher operating voltage.…”

“…All-organic systems: integrating both devices and substrates made from organic materials or active materials devices inkjet (or screen-printed) on organic/paper substrates [38]- [42], and 2. Hybrid systems: combines the transfer of inorganic electronic devices onto flexible organic substrates using low-temperature direct deposition of inorganic on plastics using laser lift-off transfer or transfer printing techniques [18], [29], [43]- [46].…”

Synthesis of graphene supported graphene-like C3N4 metal-free layered nanosheets for enhanced electrochemical performance and their biosensing for biomolecules

“…Nevertheless, the poor conductivity of g-C 3 N 4 is a serious problem strongly restricting the electron transportation and limiting the electrocatalytic activity [10]. Graphene, a two dimensional Л carbon structure material with unique electronic properties, large theoretical specific surface area and environmental benignity, has been recognized as a superior candidate for the construction of catalysts [11,12].…”