Fully symmetric vertical hall devices in CMOS technology

Sander, C.; Raz, Ran; Ruther, Patrick; Oliver, Paul; Kaufmann, Thomas; Cornils, M.; Vecchi, M.C.

doi:10.1109/icsens.2013.6688286

Cited by 25 publications

(22 citation statements)

References 8 publications

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“…This value is better than the range of sensitivity i.e. 1.5 − 4.3 %T −1 [14] reported in the literature for other VHSs [15], [16], [21].…”

Section: B Verilog-a Modelmentioning

confidence: 57%

“…VHS structure VHS devices with various types and shapes have been reported and analyzed in the past for sensitivity and offset. These include four-contact (4C), five-contact (5C), six contact (6C) and 4F 3C type VHS [16], [21]. The comparison of these structures using 3D COMSOL indicates that the currentmode 4F 3C VHS structure is the best choice and the same has been used in this work.…”

Section: Cmos Vertical Hall Sensors (Vhs)mentioning

confidence: 99%

“…For better sensitivity and reduced offset, the VHS presented here uses an optimized symmetric 4-folded 3-contact (4F 3C) structure with current-spinning technique. The 4-folded structure has been chosen here as, among several possible geometries [12]- [15], this structure is known to result in high resolution and low offset performance [16], [17]. Extending the preliminary work reported in [18], this paper also presents the results from an extensive physical simulation and behavioural modelling of current-mode VHSs on flexible substrate and provides guidelines for the device size, shape, and performance optimization.…”

Section: Introductionmentioning

confidence: 99%

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CMOS Vertical Hall Magnetic Sensors on Flexible Substrate

et al. 2016

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“…This value is better than the range of sensitivity i.e. 1.5 − 4.3 %T −1 [14] reported in the literature for other VHSs [15], [16], [21].…”

Section: B Verilog-a Modelmentioning

confidence: 57%

Section: Cmos Vertical Hall Sensors (Vhs)mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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CMOS Vertical Hall Magnetic Sensors on Flexible Substrate

et al. 2016

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“…From most of these standpoints, such devices (see e.g. the performance in [1]- [4]) are rapidly becoming competitive with commonly adopted technologies like Hall-effect, magnetic tunnel junction (MTJ) and anisotropic magneto-resistance (AMR) devices [5], [6]. This achievement is due to the conception and refinement of new operating principles, like parametric amplification [7], internal thermal-piezoresistive amplification [8], nonlinear sensitivity enhancement [9], off-resonance operation [1] or frequency modulation (FM) [2].…”

Section: Introductionmentioning

confidence: 99%

A 3-D Micromechanical Multi-Loop Magnetometer Driven Off-Resonance by an On-Chip Resonator

Laghi

Marra

Minotti

et al. 2016

J. Microelectromech. Syst.

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Abstract-The work presents the principle and the complete characterization of a single-chip unit formed by MEMS magnetometers to sense the 3D magnetic field vector, and a Tang resonator. The three sensors, nominally with the same resonance frequency, are operated 200 Hz off-resonance through an AC current whose reference frequency is provided by the resonator, embedded in an oscillating circuit. The sensors gain is increased by adopting a current recirculation strategy using metal strips directly deposited on the structural polysilicon. At a driving value of 100 µArms flowing in series through the three devices, the magnetometers show a sub 185 nT/ √ Hz resolution with a selectable bandwidth up to 50 Hz. Over a ± 5 mT full-scale range, the sensitivity curves show linearity errors lower than 0.2%, with high cross-axis rejection and immunity to external accelerations. Under temperature changes, stability of the 200-Hz difference between the magnetometers and the resonator frequency is within 55 ppm/K. Offset is trimmed down to the µT range, with an overall measured Allan stability of about 100 nT at 20 s observation time.

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“…Since flexible electronics change performances [20], the search of the optimal geometry of current-mode Hall sensor allows identifying the structure for a successive investigation on a flexible substrate. The chosen shapes are the symmetric 3-contacts 4-folded already used in the conventional voltage-mode approach [21].…”

Section: Introductionmentioning

confidence: 99%

Optimal geometry of CMOS voltage-mode and current-mode vertical magnetic hall sensors

et al. 2015

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Abstract-Four different geometries of a vertical Hall sensor are presented and studied in this paper. The current spinning technique compensates for the offset and the sensors, driven in current-mode, provide a differential signal current for a possible capacitive integration over a defined time-slot. The sensors have been fabricated using a 6-metal 0.18-μm CMOS technology and fully experimentally tested. The optimal solution will be further investigated for bendable electronics. Measurement results of the four structures over the 10 available samples show for the best geometry an offset of 41.66 ± 8 μT and a current-mode sensitivity of 9 ± 0.1 %/T. Since the figures widely change with geometry, a proper choice secures optimal performance.

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Fully symmetric vertical hall devices in CMOS technology

Cited by 25 publications

References 8 publications

CMOS Vertical Hall Magnetic Sensors on Flexible Substrate

CMOS Vertical Hall Magnetic Sensors on Flexible Substrate

A 3-D Micromechanical Multi-Loop Magnetometer Driven Off-Resonance by an On-Chip Resonator

Optimal geometry of CMOS voltage-mode and current-mode vertical magnetic hall sensors

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