Fully Qualified Gallium Nitride Power Amplifier for Use in Ka-Band Commercial Space Applications

Mok, Simon; Chiang, Norman; Law, Vivian; Sowers, James J.

doi:10.1109/bcicts54660.2023.10310786

2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) 2023

DOI: 10.1109/bcicts54660.2023.10310786

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Fully Qualified Gallium Nitride Power Amplifier for Use in Ka-Band Commercial Space Applications

Simon Mok,

Norman Chiang,

Vivian Law

et al.

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2024

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Millimeter-Wave GaN High-Power Amplifier MMIC Design Guideline Considering a Source via Effect

Kim,

Han,

Kim

et al. 2024

Electronics

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A millimeter-wave (mmWave) gallium nitride (GaN) high-power amplifier (HPA) monolithic microwave-integrated circuit (MMIC) was implemented, considering a source via effect. In this paper, we introduce guidelines for designing GaN HPA MMICs, from device sizing to meeting high-power specifications, power matching considering source via effects, schematic design of three-stage amplifier structures, and electromagnetic (EM) simulation. Based on the results of load pull simulation and small-signal maximum stable gain (MSG) simulation, the GaN high-electron-mobility transistor (HEMT) size was selected to be 8 × 70 μm. However, since the source via model provided by the foundry was significantly different from the EM results, it was necessary to readjust the power matching considering this. Additionally, when selecting the source via size, the larger the size, the easier the matching, but since the layout of the peripheral bias circuit is not possible, a compromise was required considering the actual layout. To prevent in-band oscillation, an RC parallel circuit was added to the input matching circuit, and low-frequency oscillation was solved by adding a gate resistor on the PCB module. The proposed PA was fabricated with a commercial 0.1 μm GaN HEMT MMIC process. It exhibited 38.56 to 39.71 dBm output power (Pout), 14.2 to 16.7 dB linear gain, and 14.1% to 18.2% power-added efficiency (PAE) in the upper Ka band. The fabricated GaN power amplifier MMIC shows competitive Pout in the upper Ka band above 33 GHz.

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Millimeter-Wave GaN High-Power Amplifier MMIC Design Guideline Considering a Source via Effect

Kim,

Han,

Kim

et al. 2024

Electronics

View full text Add to dashboard Cite

show abstract

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Fully Qualified Gallium Nitride Power Amplifier for Use in Ka-Band Commercial Space Applications

Cited by 1 publication

References 7 publications

Millimeter-Wave GaN High-Power Amplifier MMIC Design Guideline Considering a Source via Effect

Millimeter-Wave GaN High-Power Amplifier MMIC Design Guideline Considering a Source via Effect

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