Fully-Integrated Multi-Standard VCOs with switched LC tank and Power Controlled by Body Voltage in 130nm CMOS/SOI

Geynet, L.; Foucauld, Emeric de; Vincent, Pierre; Jacquemod, G.

doi:10.1109/rfic.2006.1651103

Cited by 16 publications

(9 citation statements)

References 6 publications

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“…The total stored magnetic energy in a set of coupled inductors in steady-state is (7) where s are inductor values, s are mutual inductance between and , and is the current phasor in inductor . Therefore, the coupled inductors can in principal have a higher magnetic stored energy when compared with uncoupled inductors.…”

Section: B Quality Factor Of Coupled-inductor Resonatormentioning

confidence: 99%

Wideband Multi-Mode CMOS VCO Design Using Coupled Inductors

Safarian

Hashemi

2009

IEEE Trans. Circuits Syst. I

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Coupled inductors can create multiple resonant frequencies in a compact high-order resonator. Together with proper nonlinear active circuitry, such a high-order resonator realizes a multi-mode oscillator covering a wide frequency range. Compared with conventional switched-resonator-based approaches that consume the same chip area, the proposed coupled-inductor-based resonator results in larger quality-factor, and hence, lower oscillator phase noise. In the proposed multi-mode oscillator that uses the multi-port coupled inductors, mode switching is achieved using independent active cores without using lossy switches in the resonator path. The behavior of the multi-mode resonator as a multiport network in an oscillator, design trade-offs, and switching transient response of the multi-mode oscillator have been studied analytically. As a proof of concept, an integrated voltage-controlled oscillator (VCO) with a 1.28-6.06 GHz tuning range is designed and fabricated in a 0.13 m CMOS technology. The triple-mode VCO uses a sixth-order resonator based on three coupled inductors with a compact common-centric layout. Depending on the oscillation frequency, the VCO current consumption is automatically adjusted from 2.9 to 6.1 mA to achieve a low phase noise throughout the frequency range. The measured phase noises at 1 MHz offset from carrier frequencies of 1.76, 2.26, 3.3, 4.5, and 5.6 GHz are 119.3, 120.15, 118.1, 117, and 113.5 dBc/Hz, respectively. The chip area, including the pads, is 1 mm 1 mm and the supply voltage is 1.5 V.Index Terms-CMOS, phase noise, voltage-controlled oscillator (VCO), wideband.

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Section: B Quality Factor Of Coupled-inductor Resonatormentioning

confidence: 99%

Wideband Multi-Mode CMOS VCO Design Using Coupled Inductors

Safarian

Hashemi

2009

IEEE Trans. Circuits Syst. I

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“…Previously implemented magnetically tuned VCOs [4], [6], [8] each used two multi-turn spiral inductors in a transformer configuration to achieve a high coupling coefficient. In this work however, multiple single-turn inductors are switched, which results in a higher and lower parasitic capacitance between the coils at the expense of a slight increase in area.…”

Section: Die Areamentioning

confidence: 99%

“…Note that the VCOs presented in [4], [6], [8] also employ magnetic coupling between the inductors. The VCO in [4] switches between the two modes of the capacitively loaded transformerbased resonator.…”

Section: Vco Measurementsmentioning

confidence: 99%

“…The use of magnetic tuning has been proposed to increase the TRs of conventional VCOs in some recent publications [4]- [9]. Magnetic tuning can be achieved by switching extra inductors that are coupled to the primary inductor as in [8], or by discretely or continuously controlling the current in the secondary winding of a transformer as in [4] and [6], respectively. Even though the magnetically tuned VCOs described in the literature provide greater TRs than conventional VCOs, they have significantly higher phase noise and/or power dissipation.…”

Section: Introductionmentioning

confidence: 99%

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Design of Wide Tuning-Range CMOS VCOs Using Switched Coupled-Inductors

Demirkan

Bruss

Spencer

2008

IEEE J. Solid-State Circuits

118

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Two designs of voltage-controlled oscillators (VCOs) with mutually coupled and switched inductors are presented in this paper to demonstrate that the tuning range of an LC VCO can be improved with only a small increase in phase noise and die area in a standard digital CMOS process. Particular attention is given to the layout of the inductors to maintain across the tuning range. In addition, different capacitive coarse-tuning methods are compared based on simulated and measured data obtained from test structures. Implemented in a 90 nm digital CMOS process, a VCO with two extra coupled inductors achieves a 61.9% tuning range with an 11.75 GHz center frequency while dissipating 7.7 mW from a 1.2 V supply. This VCO has a measured phase noise of 106 dBc/Hz at 1 MHz offset from the center frequency resulting in a higher figure-of-merit than other recently published VCOs with similar operating frequencies. In addition, the area overhead is only 30% compared to a conventional LC VCO with a single inductor.Index Terms-Integrated transformers, phase noise, radio-frequency (RF) CMOS, switched coupled inductor, tuning range, voltage-controlled oscillator (VCO).

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“…where (21) In general, is much smaller than . Thus, when , can be simplified as (22) The equivalent quality factor of the VID can be calculated as shown in the equation at the top of the page.…”

Section: Discussionmentioning

confidence: 99%

Wide Tunning Range 60 GHz VCO and 40 GHz DCO Using Single Variable Inductor

Chen

et al. 2013

IEEE Trans. Circuits Syst. I

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This paper presents a 60 GHz, 16% tuning range VCO, and a 40 GHz, 18 bits, 14% tuning range DCO incorporating variable inductor (VID) techniques. The variable inductor, consisting of a transformer and a variable resistor, is tunable by adjusting its resistor. By employing the proposed frequency tuning scheme, wide-tuning range as well as multi-band operation are achieved without sacrificing their operating frequencies. To verify the operation principles, the VCO and DCO are both fabricated in 90 nm CMOS technology. The tuning range of VCO is from 52.2 GHz to 61.3 GHz. The measured phase noise from a 61.3-GHz carrier is about 118.75 dBc/Hz at 10-MHz offset, and the output power is 6.6 dBm. It dissipates 8.7 mW from a 0.7-V supply, and the chip size is . On the other hand, the DCO is capable of covering frequency range from 37.6 GHz to 43.4 GHz. The measured phase noise from a 43 GHz carrier is about 109 dBc/Hz at 10-MHz offset, and the output power is 11 dBm. The DCO core dissipates 19 mW from a 1.2-V supply. Chip size is . Index Terms-Digital controlled oscillator (DCO), millimeterwave (MMW) band, ultra wide band (UWB), variable inductor (VID), voltage controlled oscillator (VCO).

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Fully-Integrated Multi-Standard VCOs with switched LC tank and Power Controlled by Body Voltage in 130nm CMOS/SOI

Cited by 16 publications

References 6 publications

Wideband Multi-Mode CMOS VCO Design Using Coupled Inductors

Wideband Multi-Mode CMOS VCO Design Using Coupled Inductors

Design of Wide Tuning-Range CMOS VCOs Using Switched Coupled-Inductors

Wide Tunning Range 60 GHz VCO and 40 GHz DCO Using Single Variable Inductor

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