Fully Integrated Multi-layer Stacked Structure of Integrated Inductor with Patterned Ground Shield

Robert, Ondica,; Kovac, Martin; Maljar, David; Stopjaková, Viera

doi:10.1109/bec56180.2022.9935589

Cited by 2 publications

(7 citation statements)

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“…6. From this visualization, we can conclude that our structure [2] achieved higher FoM than the other works realized in standard CMOS technology [30]. Moreover, the FoM evaluation shows that the developed inductor structure is better than some structures fabricated in more complex advanced technologies (e.g.…”

Section: Figure Of Meritmentioning

confidence: 65%

“…In our previous work [2], we proposed Multi-Layer Stacked Structure of Fully Integrated Inductor with and without structure of Patterned Ground Shield underneath. Geometry modifications were applied to the inductor structure during modelling.…”

Section: Proposed Structurementioning

confidence: 99%

“…In this work, we propose a solution for the full integration of passive devices for integrated voltage regulator already characterized in [2]. This Multi-Layer Stacked Structure of Fully Integrated Inductor with Patterned Ground Shield underneath is essential part of a conventional boost converter (CBC) and is applied as the input capacitor and inductor within the voltage regulator.…”

Section: Introductionmentioning

confidence: 99%

“…2, fully integrated inductors , reported in years 2015-2022, are categorized firstly by shape and then, by technology used for manufacturing of inductors. Section 3 summarizes results achieved in [2]. Section 4 brings an overview of fully integrated inductors manufactured within the last few years using different fabrication processes and compares them with respect to results presented in [2].…”

Section: Introductionmentioning

confidence: 99%

“…Section 3 summarizes results achieved in [2]. Section 4 brings an overview of fully integrated inductors manufactured within the last few years using different fabrication processes and compares them with respect to results presented in [2]. This section also introduces a Figure of Merit (FoM) that can be used for direct comparison of different integrated inductor structures.…”

Section: Introductionmentioning

confidence: 99%

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An Overview of Fully On-Chip Inductors

Ondica¹,

Kovac²,

Hudec³

et al. 2023

RADIOENGINEERING

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This paper focuses on full integration of passive devices, especially inductors with emphasis on multi-layer stacked (MLS) structures of fully integrated inductors using patterned ground shield (PGS) and fully integrated capacitor. Comparison of different structures is focused on the main electrical parameters of integrated inductors (e.g. inductance 𝐿, inductance density 𝐿 𝐴 , quality factor 𝑄, frequency of maximum quality factor 𝐹 𝑄max , self-resonant frequency FSR, and series resistance 𝑅 DC ) and other non-electrical parameters (e.g. required area, manufacturing process, purpose, etc.) that are equally important during comparison of the structures. Categorization of inductor structures with most significant results that was reported in the last years is proposed according to manufacturing process. Final geometrical and electrical properties of the structure in great manner accounts to the fabrication process of integrated passive device. This work offers an overview and state-of-the-art of the integrated inductors as well as manufacturing processes used for their fabrication. Second purpose of this paper is insertion of the proposed structure from our previous work among the other results reported in the last 7 years. With the proposed solution, one can obtain the highest inductance density 𝐿 𝐴 = 23.59 nH/mm 2 and second highest quality factor 𝑄 = 10.09 amongst similar solutions reported in standard technologies that is also suitable competition for integrated inductors manufactured in advanced technology nodes.

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Section: Figure Of Meritmentioning

confidence: 65%

Section: Proposed Structurementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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