Fully-integrated core chip for X-band phased array T/R modules

Vliet, F.E. van; Boer, A. de

doi:10.1109/mwsym.2004.1338936

Cited by 50 publications

(21 citation statements)

References 2 publications

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“…The design of this MMIC is based on previous versions of the MFC [4] [5]. A detailed description and schematics of the building blocks can be found in these references.…”

Section: Multi Function Chipmentioning

confidence: 99%

Multi Function and High Power Amplifier Chipset for X-Band Phased Array Frontends

Heijningen

Boer

Hoogland

et al. 2006

2006 European Microwave Integrated Circuits Conference

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“…The design of this MMIC is based on previous versions of the MFC [4] [5]. A detailed description and schematics of the building blocks can be found in these references.…”

Section: Multi Function Chipmentioning

confidence: 99%

Multi Function and High Power Amplifier Chipset for X-Band Phased Array Frontends

Heijningen

Boer

Hoogland

et al. 2006

2006 European Microwave Integrated Circuits Conference

Self Cite

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“…The two stage of polyphase filters and two variable gain amplifiers (VGAs) compose the core part of the phase shifter and are designed in a differential mode. While the reported core chips fabricated in compound semiconductor [2] uses the passive phase shifter, in our design the active phase shifter was used. Because, Si process has small Q factor of on-chip passive components due to Si substrate loss, and worse insertion loss of switches, compared to the compound semiconductor process.…”

Section: Phase Shiftermentioning

confidence: 99%

“…The T/R module composed a high power amplifier (HPA), a low noise amplifier (LNA) and functions of switching T/R modes and phase control. The amplitude and the phase control block are integrated into MMIC, known as a core chip, which have been reported by using compound semiconductor [1][2][3]. The recent Si-based technology which is suitable for low cost and high integration becomes to be used in RF applications.…”

Section: Introductionmentioning

confidence: 99%

An L-band SiGe BiCMOS core chip MMIC for transmit/receive modules

Hagiwara

Shinjo

Miki

et al. 2014

2014 9th European Microwave Integrated Circuit Conference

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In this paper, an L-band transmitter and receiver MMIC, which is known as a core chip for phased array communication and radar applications is presented. The MMIC is fabricated in 0.18 μm SiGe-BiCMOS process, comprises an RX amplifier, a 5-bit active phase shifter, SPDT switches, and a TX amplifier. The RX amplifier realized low noise and high linearity with dual bias-feed techniques. The measurement results show, in receive mode, a gain of 25.5 dB, a noise figure of 1.9 dB, and an input P1dB of -16 dBm in L-band. The MMIC is capable of providing 32 phase states from 0° to 360°, with an RMS phase error of lower than 2.3° and an RMS gain error of lower than 0.5dB. In transmit mode, the gain of 32 dB, and the saturated output power of 15 dBm are achieved.

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“…Wideband low noise amplifiers with low DC power dissipation have been playing a crucial role in various applications like ultra-wideband (UWB) communication, imaging, and software-defined radios [1,2,3]. Over the past few years, a new class of MMIC amplifiers have emerged based on pHEMT technology, with the advantage of both low noise figure and high gain performance [4,5,6].…”

Section: Introductionmentioning

confidence: 99%

4–20 GHz low noise amplifier MMIC with on-chip switchable gate biasing circuit

Chen¹,

Wang²,

Chen³

et al. 2017

IEICE Electron. Express

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A broadband low-noise amplifier (LNA) MMIC with a novel onchip switchable gate biasing circuit is proposed. The biasing circuit is able to switch on/off the low noise amplifier and compensate the variation of threshold voltage (V th ) and temperature, hence improving the robustness of the amplifier over a wide operating frequency range. The switching frequency is up to 1 MHz, and the fluctuations of on-state quiescent current and power gain of the amplifier are within ²7.9% and ²0.8% when the threshold voltage varies from −0.15 V to 0.15 V. The power gain variation is stabilized within ²1.25 dB by the biasing network, while the temperature changes from −55°C to 125°C. Realized in 0.15 µm E-mode pHEMT technology with size of 2.0 mm × 1.3 mm, the LNA provides a typical gain of 24 dB while maintaining input and output return loss better than 10 dB and the noise figure (NF) of the LNA smaller than 1.6 dB from 4 GHz to 20 GHz.

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Fully-integrated core chip for X-band phased array T/R modules

Cited by 50 publications

References 2 publications

Multi Function and High Power Amplifier Chipset for X-Band Phased Array Frontends

Multi Function and High Power Amplifier Chipset for X-Band Phased Array Frontends

An L-band SiGe BiCMOS core chip MMIC for transmit/receive modules

4–20 GHz low noise amplifier MMIC with on-chip switchable gate biasing circuit

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