Fully integrated CMOS power amplifier with linearity and efficiency enhancement using 2nd harmonic injection technique

Haghighat, Mohsen; Nabavi, Abdolreza

doi:10.1007/s10470-016-0878-y

Cited by 3 publications

(2 citation statements)

References 11 publications

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“…The class-C amplifier, conducts less than half cycle, experiences higher distortions and noise effects [21]. However, the efficiency of the class C power amplifier is better, which suffers from poor dynamic range.…”

Section: Non-linear Power Amplifiermentioning

confidence: 99%

Performance of Efficient CMOS Power Amplifier for ISM Band Applications

Saritha*,

Rani,

Anand

2019

IJITEE

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Power amplifiers are one of the most important functional blocks in the Radio Frequency (RF) frontend for reliable wireless communications. The power amplifiers amplify and boost the input signal to needed output power. The signal is amplified to create it sufficiently high for the transmitter to propagate the needed distance to the receiver. Such as power amplifiers are expected to need low-power communication while producing a relatively high output power with more efficiency. The trans-receiver has various blocks such as filters, Voltage Control Oscillator (VCO), Low Noise Amplifier (LNA) and power amplifier. Among these, the most power hungry device is a power amplifier. The efficiency of the power amplifier can be 100%, but practically it is just 55%. So, the scope of improvement in efficiency in a power amplifier will be an interesting and most challenging task. As well defined architecture, including linear functional block synthesis, which is complex in designing CMOS power amplifier for different applications. This article describes the different state-of-the-art design biasing class and advanced RF CMOS power amplifier for Industrial, Scientific, and Medical (ISM) band applications.

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Section: Non-linear Power Amplifiermentioning

confidence: 99%

Performance of Efficient CMOS Power Amplifier for ISM Band Applications

Saritha*,

Rani,

Anand

2019

IJITEE

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“…Digital pulse wireless, more commonly known as ultra-wideband is a high bandwidth radio technology is used for short range and low-power communications [1][2][3][4][5]. UWB has come to be known as a direct competitor to bluetooth and WiMax as it can fully utilize high data rate along with wide spectrum efficiency while using less or very low power transmission [6][7][8][9][10][11][12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

A two-stage power amplifier design for ultra-wideband applications

Al-Kofahi

Albataineh

Dagamseh

2021

IJECE

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In this paper, a two-stage 0.18 μm CMOS power amplifier (PA) for ultra-wideband (UWB) 3 to 5 GHz based on common source inductive degeneration with an auxiliary amplifier is proposed. In this proposal, an auxiliary amplifier is used to place the 2nd harmonic in the core amplified in order to make up for the gain progression phenomena at the main amplifier output node. Simulation results show a power gain of 16 dB with a gain flatness of 0.4 dB and an input 1 dB compression of about -5 dBm from 3 to 5 GHz using a 1.8 V power supply consuming 25 mW. Power added efficiency (PAE) of around 47% at 4 GHz with 50 Ω load impedance was also observed.

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