This chapter covers the design of PLL synthesizer blocks of the experimental PLL prototype other than the prescaler and loop filter. General analysis and design techniques of each building block are overviewed. The analysis methods of the VCO phase noise are summarized. A complete analysis of the reference spur is also made in this chapter.
VCOBasically, there are two types of on-chip VCO's for high frequency PLL's: the ring oscillator and the LC-tuned oscillator. The ring oscillator consists of a number of delay stages. It usually takes less area and has a large tuning range. The LC oscillator often takes more chip area due to spiral inductors and has a smaller tuning range, but it can run at a much higher frequency and generally its phase noise is better.
Varactor
A. Diode varactorThe reverse-biased diode, which is usually made of p-diffusion in n-well can be used as a varactor. It is a lateral device consisting of p'-n--n' diffusion sequence. Since the n-well has a high resistivity (at least hundreds of Qlsquare), the parasitic resistance introduced by the diode varactor is of a big concern. Efforts in optimizing the layout have been made in the literature to reduce the parasitic resistance [5]- [7]. Also caution should be used to keep the diode varactor working in reverse-biased mode in the VCO tuning range and oscillating range.
B. PMOS varactorThe well-known C-V characteristic of MOS transistor can be employed as a varactor for LC-VCO. The gate-to-substrate capacitance of a MOS transistor, C,,, , varies with the voltage drop between substrate and gate, V, , . Usually, the C-V characteristic of a MOS transistor is for a very small v,, signal superimposed on bias voltage V, , . If the LC-VCO, the signal v,, is large and the instantaneous value of C,,, changes through the
OTHER BUILDING BLOCKS OF PLLoscillating period, nut the average value of C,,, still varies with control voltage V, , .For a p-sub, n-well CMOS process, the MOS varactor can be two PMOS sharing the same n-well. The bias of the n-well, which is the substrate of the two PMOS transistors, is used as the frequency control node of the VCO. To reduce the parasitic resistance of MOS varactor, minimum channel length should be used to minimize the channel resistance, and the multi-finger layout is used to reduce the resistance of the poly gate. The Q of a MOS varactor is roughly proportional to the reverse of channel length and the typical Q value is between 10 and 100 [7]-[lo].
C. Inversion-mode PMOS varactor (I-MOS)Since the MOS transistor has a non-monotonic C-V characteristic, the VCO with PMOS varactors shows a non-monotonic tuning characteristic. One way to obtain a quasi-monotonic tuning characteristic MOS varactor is by ensuring that the transistor does not enter the accumulation region for a very wide range of values of V,. This is accomplished by connecting the substrate to the highest DC voltage, i.e., VDD .
D. Accumulation-mode PMOS varactor (A-MOS)A more attractive alternative is the use of the PMOS device in the depletion and accumulation...