Fully electrical 40-Gb/s TDM system prototype based on InP HEMT digital IC technologies

Yoneyama, M.; Miyamoto, Yutaka; Otsuji, T.; Toba, H.; Yamane, Y.; Ishibashi, Tadao; Miyazawa, H.

doi:10.1109/50.818904

Cited by 34 publications

(8 citation statements)

References 27 publications

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“…It is clear that the results obtained with the new CB designs are superior to those reported in [3] and [8]. Also, these results are better than those reported in [9] and fairly approach those obtained with GaAs MESFET and InP-HBT [6], [10], and [11]. Figure 7 shows the transient response of the previous CB TIA designs when driven by a 2.5 Gbps input current pulse train.…”

Section: Figure 6 Total Mean Input-referred Noise Current Versus Fresupporting

confidence: 74%

Analysis and design of fully-integrated low-noise amplifiers for optical receivers

Touati

2007

2007 ICTON Mediterranean Winter Conference

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High gain, wide bandwidth, low noise, and low-power transimpedance amplifiers based on new BiCMOS common-base topologies have been designed for fiber-optic receivers. In particular a design approach, hereafter called "A more-FET approach", added a new dimension to effectively optimize performance tradeoffs inherent in such circuits. Using conventional silicon 0.8µm process parameters, simulated performance features of a total-FET transimpedance amplifier operating at 7.2 GHz, which is close to the technology f T of 12 GHz, are presented. The results are superior to those of similar recent designs and comparable to IC designs using GaAs technology. A detailed analysis of the design architecture, including a discussion on the effects of moving toward more FET-based designs is presented.

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Section: Figure 6 Total Mean Input-referred Noise Current Versus Fresupporting

confidence: 74%

Analysis and design of fully-integrated low-noise amplifiers for optical receivers

Touati

2007

2007 ICTON Mediterranean Winter Conference

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“…5(a)) makes it possible to drive the decision circuit directly without post electrical amplifiers [5]. Such a configuration provides several advantages, such as wider bandwidth, a simpler system, and better sensitivity [2,14,15], and is considered to be suitable for systems operating at 40 Gbit/s or higher.…”

Section: Photoreceiversmentioning

confidence: 98%

“…To date, an f 3dB of 310 GHz [12] and an output power of more than 20 mW at 100 GHz [13] have been demonstrated. This superior performance of the UTC-PD can drastically expand its application area, not only as a high-speed photoreceiver in communications systems [14,15] but also as a high-power photonic mm-and submm-wave generator for various analog systems [16][17][18][19][20].…”

Section: Introductionmentioning

confidence: 98%

Uni-traveling-carrier photodiodes for high-speed detection and broadband sensing

2007

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The uni-traveling-carrier photodiode (UTC-PD) is a novel photodiode that utilizes only electrons as the active carriers. This unique feature is the key to realize its excellent high-speed and high-output characteristics simultaneously. To date, a record 3-dB bandwidth (f 3dB ) of 310 GHz and a very high millimeter (mm)-wave output power of over 17 mW at 120 GHz have been achieved. These superior characteristics are essential for the detection of high-bit-rate optical signal in communications systems and for the generation of high-frequency electro-magnetic waves in measurement and sensing systems. For optical communications, we have realized a photoreceiver operating at up to 160 Gbit/s and an avalanche photodiode with a record f 3dB of 40 GHz. For generating mm-/sub-mm-wave signals, we have developed a compact UTC-PD module with a rectangular waveguide output port for operation at up to 325 GHz. We have also fabricated a quasi-optical module for operation at higher frequencies integrating a UTC-PDs and a planar log-periodic antenna. This module can be operated at up to 1.6 THz with a maximum output-power of 2.6 µW at 1.04 THz. The UTC-PD has been used successfully for several applications, such as mm-wave imaging and photonic local signal supply for radio telescopes, demonstrating its feasibility for high-frequency measurement and sensing systems. As a challenge for future high-sensitivity sensing systems, the possibility of UTC-PD modules operating at a very low temperature of 15 K has also been demonstrated.

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“…Based on III-V material system, heterostructure field-effect transistors (HFETs), such as metal-semiconductor (M-S) field-effect transistors (MESFETs) and modulation-doped field-effect transistors (MODFETs), have attracted much attention for signal amplifier, high-speed, and digital circuit applications [1][2][3]. Among of the HFETs, device performance with high output current and device linearity are particularly essential for large signal and linear amplification applications.…”

Section: Introductionmentioning

confidence: 99%

Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor

Tsai

Lour

Huang

et al. 2010

Solid-State Electronics

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Fully electrical 40-Gb/s TDM system prototype based on InP HEMT digital IC technologies

Cited by 34 publications

References 27 publications

Analysis and design of fully-integrated low-noise amplifiers for optical receivers

Analysis and design of fully-integrated low-noise amplifiers for optical receivers

Uni-traveling-carrier photodiodes for high-speed detection and broadband sensing

Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor

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