Fully-depleted pn-junction solar cells based on layers of Cu2ZnSnS4 (CZTS) and copper-diffused AgInS2 ternary nanocrystals

Dasgupta, Uttiya; Saha, Sudip K.; Pal, Amlan J.

doi:10.1016/j.solmat.2014.01.041

Cited by 27 publications

(17 citation statements)

References 31 publications

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“…14,15,28 Cu doping was also found to be an efficient method of improving the charge carrier mobility in metalchalcogenide QDs, in particular in AIS QDs, making them more efficient light harvesters in third-generation solar cells. [29][30][31] Incorporation of copper ions into alloyed ZnS-In 2 S 3 (ref. 32 and 33) and Zn-In-Se 34 nanocrystals was found to result in a spectacular enhancement of the photocatalytic properties and PL efficiency, respectively.…”

Section: Introductionmentioning

confidence: 99%

Luminescence and photoelectrochemical properties of size-selected aqueous copper-doped Ag–In–S quantum dots

et al. 2018

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Section: Introductionmentioning

confidence: 99%

Luminescence and photoelectrochemical properties of size-selected aqueous copper-doped Ag–In–S quantum dots

et al. 2018

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“…5). In the high-resolution spectrum of Cu 2p, the doublet peaking at 932.4 and 952.3 eV, with a peak splitting of 19.9 eV, is indicative of The results suggest a coordination of sulfur with copper, zinc, and tin to form Cu 2 ZnSnS 4 [35]. Figure 6(a) shows the absorption spectra of selected CZTS nanocrystals.…”

Section: Resultsmentioning

confidence: 95%

Solvothermal synthesis of CZTS nanoparticles in ethanol: Preparation and characterization

Yan

Komarneni

2015

Journal of the Korean Physical Society

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In this work, a low-cost, non-toxic and convenient one-pot solvothermal route to synthesize Cu2ZnSnS4 (CZTS) nanoparticles is reported. The effects of solvothermal temperature and reaction time on the structure, morphology and optical properties of the as-synthesized product were investigated by using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray analysis (EDX) measurements and X-ray photoelectron spectroscopy (XPS). The results showed that the crystallinity of the CZTS powders was influenced by the solvothermal temperature and reaction time. The band gap of selected CZTS samples was near the optimum value for photovoltaic solar conversion in a single-band-gap device.

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“…A pn junction with an abrupt interface model was used, because the CdS layer was very thin. The depletion width (W) in the devices could be calculated as following:

C = \frac{{normalε}_{normalo} {normalε}_{normalr} A}{W}

Where C is capacitance, A is the area of the cell,

ε_{o}

is the free space permittivity and

ε_{r}

is the relative dielectric constant of the active layer (CZTS = 7) . The carrier concentration density ( N a , acceptor density) is derived from the slope of Mott–Schottky plot ( C −2 vs V ) by the following relations:

\frac{1}{C^{2}} = \frac{2}{q N_{normala} {normalε}_{normalo} {normalε}_{normalr} A^{2}} false(V_{normalbi} - V false)

N_{normala} = \frac{2}{q ε_{o} ε_{r} A^{2} false[\frac{d}{normald V} (1 false/ C^{2}) false]}

where C is capacitance, q is the electron charge, N a is the acceptor concentration, A is the area of the cell,

ε_{o}

is the free space permittivity,

ε_{r}

is the relative dielectric constant of the active layer (CZTS = 7), V bi is the built‐in potential, V is the applied DC voltage.…”

Section: Resultsmentioning

confidence: 99%

“…At the depletion region, the charges was separated and then contributed to the photocurrent in the external circuit . The exciton dissociation by built‐in electric field was expected if an exciton was located within the diffusion length of the depletion region . A pn junction with an abrupt interface model was used, because the CdS layer was very thin.…”

Section: Resultsmentioning

confidence: 99%

Impact of SnS Buffer Layer at Mo/Cu₂ZnSnS₄ Interface

Chen

et al. 2016

J. Am. Ceram. Soc.

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Cu2ZnSnS4 (CZTS) compound is a promising candidate for thin‐film solar cells since its constituents are earth abundant and nontoxic. One of the major challenges to obtain a high‐quality CZTS absorber is to overcome the interfacial mismatch and formation of secondary phases between the CZTS and Mo substrate during the sulfurization process. Generally, the CZTS decomposed into Cu2S, ZnS, and SnS phases during sulfurization, and high‐density voids and cracks were observed. These micro‐ or macroreactions changed the stoichiometry of CZTS. In this paper, we present the insertion of a SnS buffer layer at Mo/CZTS interface to inhibit the undesired reaction and improve the thin‐film quality. The insertion of the thin SnS buffer layer prevented the CZTS absorber to contact directly with Mo and suppressed the present of secondary phases, pores and cracks. Crack‐free and smooth morphology was obtained. The cell efficiency was significantly improved.

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Fully-depleted pn-junction solar cells based on layers of Cu2ZnSnS4 (CZTS) and copper-diffused AgInS2 ternary nanocrystals

Cited by 27 publications

References 31 publications

Luminescence and photoelectrochemical properties of size-selected aqueous copper-doped Ag–In–S quantum dots

Luminescence and photoelectrochemical properties of size-selected aqueous copper-doped Ag–In–S quantum dots

Solvothermal synthesis of CZTS nanoparticles in ethanol: Preparation and characterization

Impact of SnS Buffer Layer at Mo/Cu₂ZnSnS₄ Interface

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Fully-depleted pn-junction solar cells based on layers of Cu2ZnSnS4 (CZTS) and copper-diffused AgInS2 ternary nanocrystals

Cited by 27 publications

References 31 publications

Luminescence and photoelectrochemical properties of size-selected aqueous copper-doped Ag–In–S quantum dots

Luminescence and photoelectrochemical properties of size-selected aqueous copper-doped Ag–In–S quantum dots

Solvothermal synthesis of CZTS nanoparticles in ethanol: Preparation and characterization

Impact of SnS Buffer Layer at Mo/Cu2ZnSnS4 Interface

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Product

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Impact of SnS Buffer Layer at Mo/Cu₂ZnSnS₄ Interface