Fully Depleted MAPS in 110-nm CMOS Process With 100–300-μm Active Substrate

Pancheri, Lucio; Giampaolo, R. A.; Salvo, Andrea Di; Mattiazzo, Serena; Corradino, Thomas; Giubilato, P.; Santoro, R.; Caccia, M.; Margutti, G.; Olave, J.; Rolo, M.; Rivetti, A.

doi:10.1109/ted.2020.2985639

Cited by 30 publications

(20 citation statements)

References 13 publications

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“…TCAD simulations were also performed to estimate the voltage range that needs to be applied to the backside contact for the correct operation of the sensors. As reported in [ 16 ], this operating voltage should be larger than the one associated to full depletion, but small enough to avoid an excessive punch through current flow.…”

Section: Tcad Simulationsmentioning

confidence: 98%

“…In the first production run, both active pixel arrays with embedded electronics and passive test structures, designed to extract the device characteristic parameters and to characterize the sensor backside diodes, were included. Simulation and characterization results on active pixel arrays and test structures fabricated with this process were reported in [ 16 ]. Since a high voltage bias has to be applied to the backside junction to reach full depletion in thick silicon substrates, dedicated termination structures were designed to avoid an early breakdown of the backside junction.…”

Section: Introductionmentioning

confidence: 99%

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Design and Characterization of Backside Termination Structures for Thick Fully-Depleted MAPS

Corradino

Betta

Cilladi

et al. 2021

Sensors

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Fully Depleted Monolithic Active Pixel Sensors (FD-MAPS) represent an appealing alternative to hybrid detectors for radiation imaging applications. We have recently demonstrated the feasibility of FD-MAPS based on a commercial 110 nm CMOS technology, adapted using high-resistivity substrates and backside post-processing. A p/n junction diode, fabricated on the detector backside using low-temperature processing steps after the completion of the front-side Back End of Line (BEOL), is reverse-biased to achieve the full depletion of the substrate and thus fast charge collection by drift. Test diodes including termination structures with different numbers of floating guard rings and different pitches were fabricated together with other Process Control Monitor structures. In this paper, we present the design of the backside diodes, together with results from the electrical characterization of the test devices, aiming to improve understanding of the strengths and limitations of the proposed approach. Characterization results obtained on several wafers demonstrate the effectiveness of the termination rings in increasing the breakdown voltage of the backside diodes and in coping with the variability of the passivation layer characteristics. A breakdown voltage exceeding 400 V in the worst case was demonstrated in devices with 30 guard rings with 6 μm pitch, thus enabling the full depletion of high-resistivity substrates with a thickness larger than or equal to 300 μm. Additionally, we show the first direct comparison for this technology of measured pixel characteristics with 3D TCAD simulations, proving a good agreement in the extracted operating voltages.

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Section: Tcad Simulationsmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Design and Characterization of Backside Termination Structures for Thick Fully-Depleted MAPS

Corradino

Betta

Cilladi

et al. 2021

Sensors

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“…The ARCADIA project and its precursor, SEED (Sensor with Embedded Electronics Development), designed an innovative sensor concept [ 37 , 38 ] based on a modified 110 nm CMOS process developed in collaboration with LFoundry and compatible with their standard 110 nm CMOS process. Up to 6 metal layers can be stacked on top of the sensor, for a total metal and insulator thickness of about 4–5

m. The ARCADIA collaboration is developing a scalable event-driven readout architecture to cover detection surfaces of O(cm

) while maintaining ultra-low power consumption.…”

Section: The Arcadia Sensor Conceptmentioning

confidence: 99%

“…The feasibility of this sensor concept and approach to Fully Depleted monolithic CMOS sensors was proven in the framework of the SEED project [ 37 , 38 ], and the design activities described in this article have as a starting point the experimental and simulation work performed in that project. The main constraint on the design was to reduce to the minimum the modifications to the foundry’s standard fabrication process, in order to guarantee easy portability to different commercial fabrication processes.…”

Section: The Arcadia Sensor Conceptmentioning

confidence: 99%

Fully Depleted Monolithic Active Microstrip Sensors: TCAD Simulation Study of an Innovative Design Concept

Cilladi

Corradino

Betta

et al. 2021

Sensors

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The paper presents the simulation studies of 10 μμμm pitch microstrips on a fully depleted monolithic active CMOS technology and describes their potential to provide a new and cost-effective solution for particle tracking and timing applications. The Fully Depleted Monolithic Active Microstrip Sensors (FD-MAMS) described in this work, which are developed within the framework of the ARCADIA project, are compliant with commercial CMOS fabrication processes. A set of Technology Computer-Aided Design (TCAD) parametric simulations was performed in the perspective of an upcoming engineering production run with the aim of designing FD-MAMS, studying their electrical characteristics, and optimizing the sensor layout for enhanced performance in terms of low capacitance, fast charge collection, and low-power operation. A fine pitch of 10 μμμm was chosen to provide high spatial resolution. This small pitch still allows readout electronics to be monolithically integrated in the inter-strip regions, enabling the segmentation of long strips and the implementation of distributed readout architectures. The effects of surface radiation damage expected for total ionizing doses of the order of 10 to 105 krad were also modeled in the simulations. The results of the simulations exhibit promising performance in terms of timing and low power consumption and motivate R&D efforts to further develop FD-MAMS; the results will be experimentally verified through measurements on the test structures that will be available from mid-2021.

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“…A more compact circuit, such as the one used in the ALPIDE chip [12], has also been designed and will be tested in a dedicated prototype. A more detailed description of the processing is provided in [16].…”

Section: Introductionmentioning

confidence: 99%

Sensor Design Optimization of Innovative Low-Power, Large Area FD-MAPS for HEP and Applied Science

et al. 2021

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Fully depleted monolithic active pixel sensors (FD-MAPSs) represent a state-of-the-art detector technology and profit from a low material budget and cost for high-energy physics experiments and other fields of research like medical imaging and astro-particle physics. Compared to the MAPS currently in use, fully depleted pixel sensors have the advantage of charge collection by drift, which enables a fast and uniform response overall to the pixel matrix. The functionality of these devices has been shown in previous proof-of-concept productions. In this article, we describe the optimization of the test pixel designs that will be implemented in the first engineering run of the demonstrator chip of the ARCADIA project. These optimization procedures include radiation damage models that have been employed in Technology Computer Aided Design simulations to predict the sensors’ behavior in different working environments.

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Fully Depleted MAPS in 110-nm CMOS Process With 100–300-μm Active Substrate

Cited by 30 publications

References 13 publications

Design and Characterization of Backside Termination Structures for Thick Fully-Depleted MAPS

Design and Characterization of Backside Termination Structures for Thick Fully-Depleted MAPS

Fully Depleted Monolithic Active Microstrip Sensors: TCAD Simulation Study of an Innovative Design Concept

Sensor Design Optimization of Innovative Low-Power, Large Area FD-MAPS for HEP and Applied Science

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