2006
DOI: 10.1080/00207210600711606
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Full-wave rectifier realization using only two CCII+s and NMOS transistors

Abstract: In this paper, a voltage-mode full-wave rectifier employing plus-type second-generation current conveyors (CCII+s) and enhancement-mode n-channel metal-oxide semiconductor field-effect transistors (MOSFETs) is proposed. The presented circuit requires no passive components, and is suitable for high frequency applications. The proposed full-wave rectifier circuit is simulated using HSPICE to verify the theoretical analysis

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Cited by 69 publications
(53 citation statements)
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“…The complementary metal-oxide-semiconductor (CMOS) internal structure of the DXCCII used in the simulations is shown in Figure 4 [40] with transistor dimensions given in Table 1. Simulations are based on level 49, 0.25 µm TSMC CMOS technology parameters [41]. The supply voltages and Figure 6.…”
Section: Simulation Results and Discussionmentioning
confidence: 99%
“…The complementary metal-oxide-semiconductor (CMOS) internal structure of the DXCCII used in the simulations is shown in Figure 4 [40] with transistor dimensions given in Table 1. Simulations are based on level 49, 0.25 µm TSMC CMOS technology parameters [41]. The supply voltages and Figure 6.…”
Section: Simulation Results and Discussionmentioning
confidence: 99%
“…Also, Minaei and Yuce [13] proposed a voltage-mode (VM) fullwave rectifier with high-input impedance using a dual-X second-generation current conveyor (DXCCII) and three n-channel MOSFETs in 2008. The circuits presented in [12,13] require no passive components and they operate in VM. Some current-mode (CM) full-wave rectifiers have been reported in the literature [14][15][16][17][18].…”
Section: Introductionmentioning
confidence: 99%
“…In 2006, Yuce et al [12] proposed a full-wave rectifier deploying two plus-type second-generation current conveyors (CCII+s) and three n-channel metal-oxide semiconductor field-effect transistors (MOSFETs). Also, Minaei and Yuce [13] proposed a voltage-mode (VM) fullwave rectifier with high-input impedance using a dual-X second-generation current conveyor (DXCCII) and three n-channel MOSFETs in 2008.…”
Section: Introductionmentioning
confidence: 99%
“…This work was supported by scientific projects: GACR P102/10/P561, GACR102/09/1681,MSM0021630513, FEKT-S- 11-15. conveyor [4]. Once the diodes in the structure are replaced by NMOS transistors the MOS only rectifiers using CCII and dual-X current conveyors were presented in [10] and [11], respectively.…”
Section: Introductionmentioning
confidence: 99%