Full-Wave Analysis of Inhomogeneous Deep-Trench Isolation Patterning for Substrate Coupling Reduction and $Q$-Factor Improvement

More Efficiency of Transverse Wave Approach (Twa) by Applying Anisotropic Mesh Technique (Amt) for Full-Wave Analysis of Microwave Planar Structures

“…In most EM applications, the applied meshing to the studied microwave structure was uniform and isotropic on both x and y-direction [15,16,50] because of the nature of the existing excitation source as already mentioned in Section 2.…”

“…Besides, the TWA is based on transverse waves instead of the tangential EM fields that allow us to handle scattering operators rather than manipulating unbounded impedance or admittance operators [15,16].…”

Partition-Recomposition Methodology for Accurate Electromagnetic Analysis of SiP Passive Circuitry

“…In Fig.2, the internal ports introduced to segment a complex multi-port into sub-blocks could be also used to connect SMD (Surface Mounted Device) components, complete chip modules -when transistor-level representation are available -, or attach current signatures or any macromodel transfer function. Important and critical aspects with the formalism of internal port excitations are linked to specific definition of ground return path since it is not always possible to refer different excitations to a coherent common global ground reference [7].…”

Compact equivalent circuit derivation of bond wire arrays for power and signal integrity analysis

“…The attributes of global multi-port wide-band derivation of IC-Package parasitics include the possibility to account for couplings between signal and power suppliers for optimum co-design instead of following classical cascade-based approaches where such couplings are not correctly captured. Concurrently to the PRIMA extraction algorithm a customized general equivalent circuit architecture including both topology and substrate stacks (integration environment) effects can be derived [4]. Such multi-port equivalent circuit architecture is represented in Fig.2 where substrate stack parasitic elements are described by an admittance Y sub,k=1,2,…,N , R k,k (or R k, ) and L k,k (or L k, ) standing respectively for the bonding wires serial resistance and inductance.…”

“…Analytical and quasi-static approaches generally used to compute bonding wire's serial dc-resistance, self and mutual inductance based on straight wire assumption fail to account for distributed effects and discontinuity phenomena. Full-wave solutions suitable for accurate high frequency investigations necessitate efficient methodologies in order to filter noisy couplings resulting from de-embedding artifacts and ground return path distribution [4].…”