25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014) 2014
DOI: 10.1109/asmc.2014.6846963
|View full text |Cite
|
Sign up to set email alerts
|

Full-wafer electron beam inspection for detection of BEOL defects

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2017
2017
2021
2021

Publication Types

Select...
2
1

Relationship

0
3

Authors

Journals

citations
Cited by 3 publications
(1 citation statement)
references
References 5 publications
0
1
0
Order By: Relevance
“…E-Beam Inspection can be used for 100% full wafer inspection [28], which is generally considered a mythical target for EBI. For process layers where the line-widths and defects of interest are large, very large pixel size, and high scan frequency can be used, thereby making full wafer inspection feasible.…”
Section: Ebi For Complete Wafer Inspectionmentioning
confidence: 99%
“…E-Beam Inspection can be used for 100% full wafer inspection [28], which is generally considered a mythical target for EBI. For process layers where the line-widths and defects of interest are large, very large pixel size, and high scan frequency can be used, thereby making full wafer inspection feasible.…”
Section: Ebi For Complete Wafer Inspectionmentioning
confidence: 99%