Full wafer 3D modelling of power distribution during microwave annealing of doped c-Si

Das, Sonali

doi:10.9790/1676-09146876

Cited by 2 publications

(1 citation statement)

References 11 publications

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“…To model recrystallized silicon solar cells, understanding of the processes in implanted region and doped c-Si substrate region separately is necessary; since based on spatial distribution of material property such as dielectric function selective heating due to microwave absorption will take place. Full system 3D modelling technique using Exact Finite Difference Technique (eFDM) of doped c-Si at 300K has been reported elsewhere [4], which describes the importance of cavity dimensions on such procedure.…”

Section: Introductionmentioning

confidence: 99%

3D Modelling of Temperature Dependent Power Distribution During Microwave Annealing of Doped c-Si

Das¹

2014

IOSRJEEE

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Recrystallized silicon solar cells using microwave annealing will require adequate modelling of microwave power distribution to predict the uniformity of re-crystallization of silicon, specially at high temperatures. Since, recrystallization will have to be carried out of doped silicon, doping dependence of such processes at high temperatures is also very important. This work reports modelling results for temperature and doping dependence of microwave spatial power distribution in c-Si wafer during microwave annealing. Temperature dependence was introduced through bandgap, effective mass and lattice scattering terms in Drude model of free-carrier concentration. Dependence of doping was introduced through free-carrier dependent complex dielectric function. Absorption of power was then calculated from the complex part of the dielectric constant. The 3D Modelling was carried out using Exact Finite Difference Method. All results presented in this paper are for Industrial, Scientific and Medical (ISM) frequency of 2.45 GHz.

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Section: Introductionmentioning

confidence: 99%

3D Modelling of Temperature Dependent Power Distribution During Microwave Annealing of Doped c-Si

Das¹

2014

IOSRJEEE

Self Cite

View full text Add to dashboard Cite

show abstract

3D Modelling of Temperature Dependent Power Distribution During Microwave Annealing of Doped c-Si

Das¹

2014

View full text Add to dashboard Cite

Full wafer 3D modelling of power distribution during microwave annealing of doped c-Si

Cited by 2 publications

References 11 publications

3D Modelling of Temperature Dependent Power Distribution During Microwave Annealing of Doped c-Si

3D Modelling of Temperature Dependent Power Distribution During Microwave Annealing of Doped c-Si

3D Modelling of Temperature Dependent Power Distribution During Microwave Annealing of Doped c-Si

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