2017
DOI: 10.1016/j.jallcom.2016.09.293
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Full range optical and electrical properties of Zn-doped SnO2 and oxide/metal/oxide multilayer thin films deposited on flexible PET substrate

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Cited by 42 publications
(17 citation statements)
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“…In contrast, as shown in Figure (b), transmittance at wavelength of 550 nm (Tr 550nm ) of the films gradually decreased from 88.4 to 86.5% for TiO 2 (10 nm) and from 86.9 to 82.4% for TiO 2 (20 nm) with an increase in the SiO 2 thickness from 10 to 120 nm. This deviation between the simulation and experimental data may originate from the pronounced effect of absorption, because the increase in SiO 2 thickness was much greater than the anti‐reflection effect of the IML . In addition, the actual film thicknesses may have been slightly different from the target thicknesses during the deposition process.…”
Section: Resultsmentioning
confidence: 92%
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“…In contrast, as shown in Figure (b), transmittance at wavelength of 550 nm (Tr 550nm ) of the films gradually decreased from 88.4 to 86.5% for TiO 2 (10 nm) and from 86.9 to 82.4% for TiO 2 (20 nm) with an increase in the SiO 2 thickness from 10 to 120 nm. This deviation between the simulation and experimental data may originate from the pronounced effect of absorption, because the increase in SiO 2 thickness was much greater than the anti‐reflection effect of the IML . In addition, the actual film thicknesses may have been slightly different from the target thicknesses during the deposition process.…”
Section: Resultsmentioning
confidence: 92%
“…Transparent conductive electrodes (TCEs) are the core components of a variety of optoelectronic devices such as flexible displays, thin film transistors, solar cells, and touch screen panels . Among the different types of TCEs investigated, the oxide/metal/oxide (OMO) structured multilayer films are one of the most promising transparent conducting oxide (TCO) materials for applications requiring flexible TCEs; this is because of the excellent optical and electrical performance of these films in flexible TCEs, as well as their cost effectiveness .…”
Section: Introductionmentioning
confidence: 99%
“…The enhanced conductivity of Zn‐SnO 2 will reduce the hysteresis effect slightly. According to the previous study, Zn 2+ doped in the lattice interstitials can improve the n‐type conducting properties due to zinc interstitials (Zn i ), and native defects such as oxygen vacancies ( V o ) could acts as donors, which result in the decrease in resistivity of the SnO 2 thin film . From the test results, it is believed that there can be a certain number of zinc ions in the lattice interstitials.…”
Section: Resultsmentioning
confidence: 97%
“…The n‐type conduction can be improved by doping with Zn 2+ , this is due to the formation of zinc interstitials (Zn i ) and/or oxygen vacancies ( V o ), which can reduce the distance between the Fermi level and the conducting band resulting in improved conductivity . Simultaneously, the conductivity of the semiconductor can also be improved by reducing the defect density .…”
Section: Resultsmentioning
confidence: 99%
“…Metal-oxide thin films are being gradually investigated by many researchers in various fields. [1][2][3][4][5] Especially, nickel oxide (NiO) thin films have been used in various applications such as electrochromic devices, fuel cell electrodes, and functional sensors 6,7 because of their good electrochemical stability, durability, optical properties, and low cost. 8 Furthermore, stable LC alignment characteristics can be expected from adding a NiO thin film to a liquid crystal (LC) device.…”
Section: Introductionmentioning
confidence: 99%