2018
DOI: 10.4191/kcers.2018.55.3.11
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Full Parametric Impedance Analysis of Photoelectrochemical Cells: Case of a TiO2 Photoanode

Abstract: Ferric oxide (α-Fe 2 O 3 , hematite) is an n-type semiconductor; due to its narrow band gap (E g = 2.1 eV), it is a highly attractive and desirable material for use in solar hydrogenation by water oxidation. However, the actual conversion efficiency achieved with Fe 2 O 3 is considerably lower than the theoretical values because the considerably short diffusion length (2-4 nm) of holes in Fe 2 O 3 induces excessive charge recombination and low absorption. This is a significant hurdle that must be overcome in o… Show more

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Cited by 11 publications
(4 citation statements)
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“…Additionally, β and γ are dispersion parameters with values between 0 and 1. The H–N function was originally devised to describe dielectric relaxation in organic materials. Subsequently, the H–N function was also applied to understand various dispersive phenomena in electrochemical processes in semiconductors, such as the Mott–Schottky response in TiO 2 photoanodes and current-constriction effects in the grain boundaries of polycrystalline Na 3 Sc 2 (PO 4 ) 2 . , The H–N function is also appropriate to demonstrate complicated electrochemical circumstances at the interface between the p-MnO NPs film and the electrolyte. At applying a potential, the interface was polarized by electrolyte ions and surface-charged intermediates.…”
Section: Resultsmentioning
confidence: 99%
“…Additionally, β and γ are dispersion parameters with values between 0 and 1. The H–N function was originally devised to describe dielectric relaxation in organic materials. Subsequently, the H–N function was also applied to understand various dispersive phenomena in electrochemical processes in semiconductors, such as the Mott–Schottky response in TiO 2 photoanodes and current-constriction effects in the grain boundaries of polycrystalline Na 3 Sc 2 (PO 4 ) 2 . , The H–N function is also appropriate to demonstrate complicated electrochemical circumstances at the interface between the p-MnO NPs film and the electrolyte. At applying a potential, the interface was polarized by electrolyte ions and surface-charged intermediates.…”
Section: Resultsmentioning
confidence: 99%
“…Compared to the pure Ge electrode, the diameters of the semicircle are smaller in the Ge@C electrodes because of the higher electrical conductivity of the additional carbon matrix, indicating the decrease in charge transfer resistance of the composite electrodes. The EIS results were fitted using an equivalent circuit model, including an internal or electrolyte resistance ( R e ), a charge transfer resistance ( R ct ), and two constant phase elements (CPE) [ 65 ]. According to Table 2 , the charge transfer resistances of all Ge@C electrodes are much lower than the values of the pure Ge electrode, and Ge/C-iM750 exhibits the lowest value.…”
Section: Resultsmentioning
confidence: 99%
“…On the other hand, the Havriliak–Negami model can represent the well-defined limiting capacitance of a physical significance, which is indeed experimentally observed, without the introduction of the resistance parameter. Recently, a parallel combination of the Havriliak–Negami capacitance functions has been shown to be a far superior description of the ac behavior of polycrystalline solid electrolytes with grain boundary blocking effects against the conventional R-CPE parallel circuit models. …”
Section: Resultsmentioning
confidence: 99%