Full-chip lithography simulation and design analysis: how OPC is changing IC design

Spence, Chris

doi:10.1117/12.608020

Cited by 18 publications

(11 citation statements)

References 25 publications

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“…For the similar reasons that caused the industry to move to model-based OPC from rule-based OPC, the MPC solution should also to be model-based [6].…”

Section: Mask Modelingmentioning

confidence: 98%

Integration of the retical systematic CD errors into an OPC modeling and correction

Han¹,

Mansfield²,

Krasnoperova³

2006

SPIE Proceedings

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The impact of mask CD non-uniformity on the accuracy of optical proximity correction (OPC) models has been observed on several critical levels. In the current OPC model calibration flow, the mask effect is not explicitly separated from the optical and resist models. Instead, the resist model is compensating for the mask errors. In this paper, we report a detailed study of the effect of mask CD non-uniformity on OPC model accuracy using the established OPC model calibration flow. The influence of mask CD non-uniformity on the through process behavior of an OPC model is also discussed. A possible OPC flow to take the systematic mask CD error into consideration is proposed and a detailed study of mask modeling is present.

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“…For the similar reasons that caused the industry to move to model-based OPC from rule-based OPC, the MPC solution should also to be model-based [6].…”

Section: Mask Modelingmentioning

confidence: 98%

Integration of the retical systematic CD errors into an OPC modeling and correction

Han¹,

Mansfield²,

Krasnoperova³

2006

SPIE Proceedings

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“…In optical lithography, the trend is to correct for these effects by predistorting the mask patterns, to compensate [15][16][17].…”

Section: Optical Proximity Correctionmentioning

confidence: 99%

Optical lithography—a historical perspective

Ronse

2006

Comptes Rendus. Physique

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“…7 In addition, Cork et al mathematically described the target contour to best realize design intent, 8 and Yenikayaanf and Sezginer tried to determine printability of a target layout by mathematical inequalities. 9 There are also other papers discussing the new concepts in OPC 10,11 and layout printability. [12][13][14][15] However, few attempts have been conducted on the contour-based OPC strategy.…”

Section: Introductionmentioning

confidence: 97%

Study of the contour-based optical proximity correction methodology

Kang¹

2009

J. Micro/Nanolith. MEMS MOEMS

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As design rule continues to shrink, resolution enhancement techniques ͑RET͒ such as optical proximity correction ͑OPC͒ become more and more complex to enable design printability. As we know, typically integrated circuit ͑IC͒ layouts are simple shapes such as rectangles. However, high spatial frequency components of the mask spectrum that are not captured by the low-pass pupil result in a rounded image. In addition, the diffusion process in the postexposure bake ͑PEB͒ step makes the wafer rounding effects worse. This means that it is difficult to get the wafer image to match the design exactly at corners, even with the most aggressive OPC methodology. Therefore, pre-OPC site placement optimization is necessary to achieve high quality wafer images. In this work, a contour-based OPC methodology is proposed to minimize the time consumption in pre-OPC simulation site placement optimization and OPC job running. Rounded target contours that best describe the real intended wafer result are used as the target during OPC correction. By comparing classical OPC recipe-driven target point placement and contour-based OPC methodology, it is found that contour-based OPC methodology can achieve comparable image quality in a shorter turn around time ͑TAT͒ with fewer engineer resources.

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Full-chip lithography simulation and design analysis: how OPC is changing IC design

Cited by 18 publications

References 25 publications

Integration of the retical systematic CD errors into an OPC modeling and correction

Integration of the retical systematic CD errors into an OPC modeling and correction

Optical lithography—a historical perspective

Study of the contour-based optical proximity correction methodology

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