Full capacitance model, considering the specifics of amorphous oxide semiconductor thin film transistors structures

Cerdeira, A.; Estrada, M.; Hernandez-Barrios, Y.; Hernandez, I.; Iñı́guez, Benjamı́n

doi:10.1016/j.sse.2019.03.031

Cited by 8 publications

(9 citation statements)

References 14 publications

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“…The AFCM, including the current-voltage and the capacitance-voltage models [5] and [6], respectively, was described in Verilog-A language, and used in SmartSpice from Silvaco, to simulate the analyzed circuits. As already indicated, the AFCM includes the extrinsic effects of the overlaps on the internal capacitances of the transistors shown in Fig.…”

Section: Analysis and Discussion Of The Resultsmentioning

confidence: 99%

“…The fabricated load TFTs had a width of W= 15 µm and a channel length of L= 15 µm, while the drivers had a width of W=150 µm with the same channel length of L= 15 µm. performance of these geometrical overlaps in the devices are considered in the full capacitance model for AOSTFTs reported in [6].…”

Section: Experimental Partmentioning

confidence: 99%

“…The extraction of the required model parameters was done as reported in [5,6], after which obtained parameters were introduced in the simulator. The extracted values are shown on Table I.…”

Section: Qgd = Cgd*v(gdp); Qgs = Cgs*v(gsp);mentioning

confidence: 99%

“…voltage model (AFCM) for bottom gate staggered AOSTFTs configuration, using an etch stopper layer structure [6], while in this work, we focus on its dynamic validation. Both models were described in Verilog-A language for using them in commercial circuit simulators, that allow the compilation of external models.…”

Section: Introductionmentioning

confidence: 99%

“…The device geometry of the TFTs is very important to determine the oscillator performance, among which the overlap capacitance becomes a very important feature [7]. The developed AFCM considers, not only the typical overlap capacitance between the gate and drain contact (OV), but also, the top overlap associated to the part of the drain contact on top of the ESL layer in the structure (TOV) [6]. Other aspects, as the effect of the internal capacitances of the transistors, as well as variation of the supply voltage, are taken into account.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Dynamic Simulation of a-IGZO TFT Circuits Using the Analytical Full Capacitance Model (AFCM)

Hernandez-Barrios

Gaspar-Angeles

Estrada

et al. 2021

IEEE J. Electron Devices Soc.

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Section: Analysis and Discussion Of The Resultsmentioning

confidence: 99%

Section: Experimental Partmentioning

confidence: 99%

“…The extraction of the required model parameters was done as reported in [5,6], after which obtained parameters were introduced in the simulator. The extracted values are shown on Table I.…”

Section: Qgd = Cgd*v(gdp); Qgs = Cgs*v(gsp);mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Dynamic Simulation of a-IGZO TFT Circuits Using the Analytical Full Capacitance Model (AFCM)

Hernandez-Barrios

Gaspar-Angeles

Estrada

et al. 2021

IEEE J. Electron Devices Soc.

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Effect of hydrogen on the chemical state, stoichiometry and density of amorphous Al₂O₃ films grown by thermal atomic layer deposition

Cancellieri,

Gramatte,

Politano

et al. 2024

Surface & Interface Analysis

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Amorphous oxide thin films grown by thermal atomic layer deposition (ALD) typically contain high impurity concentrations of hydrogen, which affects both chemistry and structure and thereby the functional properties, such as the barrier properties in, for example, microelectronic and photovoltaic devices. This study discloses the effect of H incorporation in amorphous Al2O3 ALD oxide films on the local chemical binding states of Al, O and H, as well as the oxide density and stoichiometry, by a combined analytical approach using elastic recoil detection analysis, Rutherford backscattering spectroscopy and full chemical state analysis by dual‐source X‐ray photoelectron spectroscopy (XPS)/hard X‐ray photoelectron spectroscopy (HAXPES). The experimental findings are compared with crystalline anhydrous α‐Al2O3 and hydroxide α‐Al (OH)3 reference phases and further supported by molecular dynamic simulations. It is shown that H preferably forms covalent –OH hydroxyl bonds with O in the nearest‐neighbour coordination spheres of interstitial Al cations, which affects both the ligand electronic polarizability and the bond length of the randomly interconnected [AlOn] polyhedral building blocks in the amorphous ALD oxide films.

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Analytical I–V and C–V models for symmetric double-gate AOSTFTs

Hernandez-Barrios¹,

Estrada²,

Pashkovich³

et al. 2021

Semicond. Sci. Technol.

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In this article we present a full physical analytical model (FAM) for symmetric double-gate amorphous oxide semiconductor TFTs (DG AOSTFTs). The current-voltage (I-V) model is physically described for the above-threshold operation regime. In this case, the general expression for the field effect mobility is evaluated for the potential at the centre of the semiconductor layer at V G = 1 + V T , obtaining the value of the mobility parameter called µ 1DG for DG-AOSTFT. This parameter can now be used to represent the field effect mobility expression like in the model known as the unified model and extraction method, which is widely used for modelling amorphous devices. The proposed FAM model contains the analytical capacitances-voltage (C-V) model and considers the specific characteristics of DG structures, including the potential different from zero, at the centre of the semiconductor layer. The model was described in Verilog-A for introducing in Silvaco's SmartSpice simulation program and was validated with simulated data and experimental characteristics of reported DG amorphous indium-galium-zinc oxide devices.

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Full capacitance model, considering the specifics of amorphous oxide semiconductor thin film transistors structures

Cited by 8 publications

References 14 publications

Dynamic Simulation of a-IGZO TFT Circuits Using the Analytical Full Capacitance Model (AFCM)

Dynamic Simulation of a-IGZO TFT Circuits Using the Analytical Full Capacitance Model (AFCM)

Effect of hydrogen on the chemical state, stoichiometry and density of amorphous Al₂O₃ films grown by thermal atomic layer deposition

Analytical I–V and C–V models for symmetric double-gate AOSTFTs

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Full capacitance model, considering the specifics of amorphous oxide semiconductor thin film transistors structures

Cited by 8 publications

References 14 publications

Dynamic Simulation of a-IGZO TFT Circuits Using the Analytical Full Capacitance Model (AFCM)

Dynamic Simulation of a-IGZO TFT Circuits Using the Analytical Full Capacitance Model (AFCM)

Effect of hydrogen on the chemical state, stoichiometry and density of amorphous Al2O3 films grown by thermal atomic layer deposition

Analytical I–V and C–V models for symmetric double-gate AOSTFTs

Contact Info

Product

Resources

About

Effect of hydrogen on the chemical state, stoichiometry and density of amorphous Al₂O₃ films grown by thermal atomic layer deposition