“…Apart from the application to actual non-equilibrium quantum transport phenomena comprising ballistic transport and resonant tunneling in semiconductor multilayers and nanostructures of different dimensionality (quantum wells [16], wires [17,18] and dots [19]), metallic and molecular conduction [20,21,22,23,24,25,26], phonon mediated inelastic and thermal transport [27,28,29,30,31], Coulomb-blockade [32,33] and Kondo-effect [34,35], it is also used to describe strongly non-equilibrium and interacting regimes in semiconductor quantum optics requiring a quantum kinetic approach [36,37,38,39,40,41], with phenomena such as non-equilibrium absorption, interband polarization, spontaneous emission and laser gain. The concept was first adapted to the simulation of transport in open nanoscale devices on the example of tunneling in metal-insulator-metal junctions [42], and has in the following been applied to investigation and modelling of MOSFET [43,44,45,46,47], CNT-FET [48,49], resonant tunneling diodes [50,51,27,52,16,53] and interband tunneling diodes [54,…”