Front surface illuminated InAsSb photodiodes (long-wavelength cutoff λ0.1 = 4.5 μm) operating at temperatures of 25–80°C

Abstract

The current-voltage characteristics and temperature dependences of zero bias dynamic resis tance are analyzed for InAsSb photodiodes, with consideration for current crowding near the anode, using experimental data on the intensity distribution of positive and negative luminescence over the surface of the diodes. The effect of temperature on the efficiency of photogenerated carrier collection in the diodes and also the effect of the anode configuration on the current sensitivity and detectivity of the diodes are discussed.