Large Area and Flexible Electronics 2015
DOI: 10.1002/9783527679973.fmatter
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Cited by 27 publications
(53 citation statements)
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“…As a result an intense effort has been made towards the chemical modification of these molecules to make them soluble and inkjet-processable [119,120] and also towards the manufacturing of devices using them [121,122]. Exposure to moisture and oxygen results in degradation of the performance and lifetime reduction so the encapsulation of devices after printing is nowadays a standard step in the manufacturing of OLEDs [123,124]. …”
Section: Inkjet Printing Of Light Emitting Devicesmentioning
confidence: 99%
“…As a result an intense effort has been made towards the chemical modification of these molecules to make them soluble and inkjet-processable [119,120] and also towards the manufacturing of devices using them [121,122]. Exposure to moisture and oxygen results in degradation of the performance and lifetime reduction so the encapsulation of devices after printing is nowadays a standard step in the manufacturing of OLEDs [123,124]. …”
Section: Inkjet Printing Of Light Emitting Devicesmentioning
confidence: 99%
“…3 One of the main advantages of polymer semiconductors is their compatibility with flexible devices, as well as with solution-processed, large area deposition techniques. 4 In contrast with the PV field, exploitation of the optoelectronic properties of conjugated polymers for photoelectrochemical applications has been scarcely considered. 510 It is only very recently that polymer-based devices for photoelectrochemical hydrogen production have been reported by a few groups.…”
Section: Introductionmentioning
confidence: 99%
“…[3] [4] In a recent article, [5] we demonstrated that organic photodetectors based on poly (2,7-carbazole-alt-4,7-dithienyl-2,1,3-benzothiadiazole) (PCDTBT) and phenyl-C61-butyric acid methyl ester (PC60BM) can reach excellent performances, both in terms of linear dynamic range, external quantum efficiency (EQE > 65% at -2V) and detectivity (D = 3.2 × 10 13 cm Hz 1/2 W −1 at 566 nm and −2 V). These results are essentially the consequence of the low dark current (0.3 nA cm −2 at −2 V) achieved thanks to the excellent control of energetic barriers at the electrodes.…”
Section: Introductionmentioning
confidence: 99%