Atomic Layer Deposition for Semiconductors 2013
DOI: 10.1007/978-1-4614-8054-9_7
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“…60 When new materials such as the dielectric HfO2 became fundamental for the advancement of the semiconductor industry, [62][63][64][65] so did ALD. 66,67 The push for thinner films, [68][69][70] 3D structures 71,72 and high aspect ratio structures [73][74][75] contributed to the establishment of ALD as a necessary technology in the semiconductor industry as a result of the control of sub-nm thickness, film composition and conformality of the deposition on challenging high aspect ratio structures. The extensive number of possible films that ALD can deposit on a wide range of substrate promoted the expansion of the technology to many different fields other than IC production.…”
Section: Atomic Layer Depositionmentioning
confidence: 99%
“…60 When new materials such as the dielectric HfO2 became fundamental for the advancement of the semiconductor industry, [62][63][64][65] so did ALD. 66,67 The push for thinner films, [68][69][70] 3D structures 71,72 and high aspect ratio structures [73][74][75] contributed to the establishment of ALD as a necessary technology in the semiconductor industry as a result of the control of sub-nm thickness, film composition and conformality of the deposition on challenging high aspect ratio structures. The extensive number of possible films that ALD can deposit on a wide range of substrate promoted the expansion of the technology to many different fields other than IC production.…”
Section: Atomic Layer Depositionmentioning
confidence: 99%