From omelet lithography to state-of-the-art performance resists: resist screening with EUV interference lithography

Allenet, Timothée; Mortelmans, Thomas; Vockenhuber, Michaela; Yeh, Chia-Kai; Ekinci, Yasin

doi:10.1117/12.2600920

Cited by 2 publications

(4 citation statements)

References 13 publications

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“…Coherent synchrotron EUV light is used in conjunction with diffraction gratings to form a high-resolution interference pattern that can be used to expose and pattern resists 10 . In this work, patterning of lines/spaces (LS) features is considered, where half-pitch (HP) is targeted as the printed CD.…”

Section: Exposure Toolmentioning

confidence: 99%

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EUV resist screening update: progress towards high-NA lithography

Allenet

Vockenhuber

Chen

et al. 2022

Advances in Patterning Materials and Processes XXXIX

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The improvement of EUV photoresists is a key enabler for the deployment of High-NA EUV lithography and future technology nodes. Research in this field is supported by a joint research program between PSI and ASML. This program is dedicated to supporting the EUVL community with the development of materials by carrying out resist screening experiments with the EUV interference lithography tool at PSI, with an emphasis on resolution improvement towards reaching High-NA EUV scanner specifications. The tool enables high-resolution patterning without limitations in terms of chemical outgassing or contamination and is, therefore, an effective method for the testing of novel EUV photoresists. In this work, we consider the progress monitored in the second half of 2021. We describe the exposure tool as well as the updates made to the resist characterization metrology implemented at PSI. Resist performances are quantified with regards to resolution, linewidth roughness, and sensitivity. We show an overview of the current development status through a comparative study of different resist platforms. Recent results show chemically amplified resists (CAR) and non-CAR printing 12 nm and 11 nm lines/spaces features, respectively. Limitations of each platform are displayed and general progress and perspectives are discussed to lead the way to higher resolution results.

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Section: Exposure Toolmentioning

confidence: 99%

“…Furthermore, the tool consists of a stripped-down optical setup 10 which provides flexibility for experimentation with outgassing and contaminating chemicals. Aside from tool specifics, a tailored resist screening metrology and analysis capacity has been developed at PSI.…”

Section: Exposure Toolmentioning

confidence: 99%

EUV resist screening update: progress towards high-NA lithography

Allenet

Vockenhuber

Chen

et al. 2022

Advances in Patterning Materials and Processes XXXIX

View full text Add to dashboard Cite

show abstract

“…Egg albumin was used to obtain sub-100 nm patterns and as a positive and negative resist capable of submicron resolution in e-beam and UV lithography. 18,19 Polysaccharides have received a lot of interest as well. Dextrin, 20,21 cellulose, 22,23 and chitosan [24][25][26][27] may become a good alternative to the industrial resists.…”

Section: Introductionmentioning

confidence: 99%

“…For example, silk fibroin was claimed to be a good candidate for e‐beam and DUV lithography, 15–17 however, a complex preparation protocol was required. Egg albumin was used to obtain sub‐100 nm patterns and as a positive and negative resist capable of submicron resolution in e‐beam and UV lithography 18,19 . Polysaccharides have received a lot of interest as well.…”

Section: Introductionmentioning

confidence: 99%