From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of ${\rm HfO}_{2}$-Based FeFET Devices

Mueller, Stefan; Müller, Johannes; Hoffmann, R.; Yurchuk, Ekaterina; Schlösser, T.; Baburske, Roman; Paul, J.; Goldbach, M.; Herrmann, T.; Zaka, A.; Schröder, Uwe; Mikolajick, Thomas

doi:10.1109/ted.2013.2283465

Cited by 126 publications

(61 citation statements)

References 13 publications

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“…In fact, with very high density of bits, the endurance of 10 4 could be sufficient for many applications . Martin, S. Müller, J. Müller, and Yurchuk et al reportedsimilar endurance and retention properties of the FeFET with Si‐doped HfO 2 FE gate oxide . Cheng et al recently reported the FeFET with Hf 0.5 Zr 0.5 O 2 as the FE layer .…”

Section: Applicationsmentioning

confidence: 99%

Ferroelectricity and Antiferroelectricity of Doped Thin HfO₂‐Based Films

et al. 2015

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The recent progress in ferroelectricity and antiferroelectricity in HfO2-based thin films is reported. Most ferroelectric thin film research focuses on perovskite structure materials, such as Pb(Zr,Ti)O3, BaTiO3, and SrBi2Ta2O9, which are considered to be feasible candidate materials for non-volatile semiconductor memory devices. However, these conventional ferroelectrics suffer from various problems including poor Si-compatibility, environmental issues related to Pb, large physical thickness, low resistance to hydrogen, and small bandgap. In 2011, ferroelectricity in Si-doped HfO2 thin films was first reported. Various dopants, such as Si, Zr, Al, Y, Gd, Sr, and La can induce ferro-electricity or antiferroelectricity in thin HfO2 films. They have large remanent polarization of up to 45 μC cm(-2), and their coercive field (≈1-2 MV cm(-1)) is larger than conventional ferroelectric films by approximately one order of magnitude. Furthermore, they can be extremely thin (<10 nm) and have a large bandgap (>5 eV). These differences are believed to overcome the barriers of conventional ferroelectrics in memory applications, including ferroelectric field-effect-transistors and three-dimensional capacitors. Moreover, the coupling of electric and thermal properties of the antiferroelectric thin films is expected to be useful for various applications, including energy harvesting/storage, solid-state-cooling, and infrared sensors.

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Section: Applicationsmentioning

confidence: 99%

Ferroelectricity and Antiferroelectricity of Doped Thin HfO₂‐Based Films

et al. 2015

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“…Due to the high coercive field, compatibility with conventional complementary metal-oxide semiconductor (CMOS) processes and persistent ferroelectricity for ultra thin layers [1,2], HfO 2 shows excellent properties for non-volatile memories such as ferroelectric field effect transistors (FeFET) [3], ferroelectric random-access memories (FeRAM) [4], and ferroelectric tunneling junctions (FTJs) [5].…”

Section: Introductionmentioning

confidence: 99%

Structural and Electrical Comparison of Si and Zr Doped Hafnium Oxide Thin Films and Integrated FeFETs Utilizing Transmission Kikuchi Diffraction

et al. 2020

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The microstructure of ferroelectric hafnium oxide plays a vital role for its application, e.g., non-volatile memories. In this study, transmission Kikuchi diffraction and scanning transmission electron microscopy STEM techniques are used to compare the crystallographic phase and orientation of Si and Zr doped HfO2 thin films as well as integrated in a 22 nm fully-depleted silicon-on-insulator (FDSOI) ferroelectric field effect transistor (FeFET). Both HfO2 films showed a predominately orthorhombic phase in accordance with electrical measurements and X-ray diffraction XRD data. Furthermore, a stronger texture is found for the microstructure of the Si doped HfO2 (HSO) thin film, which is attributed to stress conditions inside the film stack during crystallization. For the HSO thin film fabricated in a metal-oxide-semiconductor (MOS) like structure, a different microstructure, with no apparent texture as well as a different fraction of orthorhombic phase is observed. The 22 nm FDSOI FeFET showed an orthorhombic phase for the HSO layer, as well as an out-of-plane texture of the [111]-axis, which is preferable for the application as non-volatile memory.

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“…The direct experimental evidence of the ferroelectric Pca2 1 phase was provided by scanning transmission electron microscopy [26]. These findings stimulated significant efforts in studying relevant properties of ferroelectric HfO 2 films [27][28][29][30][31][32], showing their applicability as a functional gate oxide in nanoscale FeFET memory devices [33,34] and ferroelectric tunnel junctions [35][36][37].…”

Section: Introductionmentioning

confidence: 99%

Magnetoelectric Effect at the Ni/HfO2 Interface Induced by Ferroelectric Polarization

et al. 2019

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Driven by the technological importance of the recently discovered ferroelectric HfO 2 , we explore a magnetoelectric effect at the HfO 2-based ferroelectric-ferromagnetic interface. Using density-functionaltheory calculations of the Ni/HfO 2 /Ni (001) heterostructure as a model system, we predict a stable and sizable ferroelectric polarization in a few-nm-thick HfO 2 layer. For the Ni/HfO 2 interface with opposite polarization directions (pointing to or away from the interface), we find a sizable difference in the interfacial Ni-O bonding, resulting in dissimilar degrees of depletion of the electron density around the interface. The latter affects the relative population of the exchange-split majority and minority spin bands at the interface and thus the interfacial magnetic moments. The sizable change in the interface magnetization with ferroelectric polarization reversal of HfO 2 manifests a significant ferroelectrically induced magnetoelectric effect at the Ni/HfO 2 interface. Our results reveal promising prospects of ferroelectric-ferromagnetic composite multiferroics based on HfO 2-based ferroelectric materials.

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From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of ${\rm HfO}_{2}$-Based FeFET Devices

Cited by 126 publications

References 13 publications

Ferroelectricity and Antiferroelectricity of Doped Thin HfO₂‐Based Films

Ferroelectricity and Antiferroelectricity of Doped Thin HfO₂‐Based Films

Structural and Electrical Comparison of Si and Zr Doped Hafnium Oxide Thin Films and Integrated FeFETs Utilizing Transmission Kikuchi Diffraction

Magnetoelectric Effect at the Ni/HfO2 Interface Induced by Ferroelectric Polarization

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From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of ${\rm HfO}_{2}$-Based FeFET Devices

Cited by 126 publications

References 13 publications

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films

Structural and Electrical Comparison of Si and Zr Doped Hafnium Oxide Thin Films and Integrated FeFETs Utilizing Transmission Kikuchi Diffraction

Magnetoelectric Effect at the Ni/HfO2 Interface Induced by Ferroelectric Polarization

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Ferroelectricity and Antiferroelectricity of Doped Thin HfO₂‐Based Films

Ferroelectricity and Antiferroelectricity of Doped Thin HfO₂‐Based Films