From ephemers to monomers, oligomers and polymers. New methods for the generation and transformation of silanones

Silicon Oxycarbide Films Produced by Remote Microwave Hydrogen Plasma CVD using a Tetramethyldisiloxane Precursor: Growth Kinetics, Structure, Surface Morphology, and Properties

“…A similar effect of T S on surface morphology as revealed by the R rms data for the present a‐SiCO:H films (Fig. c) has also been observed for a‐SiC:H films formed by RP‐CVD from dimethylsilane, trimethylsilane, hexamethyldisilane, and (dimethylsilyl)(trimethylsilyl) methane, precursors, where the rise in T S from 30 °C to 400 °C caused a drop in a surface roughness in the ranges: 2.8 nm ≥ R rms ≥ 0.9 nm, 2.2 nm ≥ R rms ≥ 0.9 nm, 2.1 nm ≥ R rms ≥ 1.5 nm, and 1.7 nm ≥ R rms ≥ 0.8 nm …”

“…Due to their biradical nature 1,1‐dimethylsilanone, dimethylsilylene, and 1‐methylsilene, strongly reactive intermediates may propagate the growth of a‐SiCO:H film via their stepwise “had‐to‐tail” insertion to the Si−O (in the case of 1,1‐dimethylsilanone) and Si−C (in the case of dimethylsilylene and 1‐methylsilene) bonds, at the first stage in TMDSO molecules adsorbed on the growth surface and then to the segments of growing film. This process may be exemplified by the elementary insertion reactions of the intermediates involving the Si−O and Si−C bonds, as described by Eqs.…”

Silicon Oxycarbide Thin Films by Remote Microwave Hydrogen Plasma CVD Using a Tetramethyldisiloxane Precursor

“…Due to their biradical nature, 1,1‐dimethylsilanone, dimethylsilylene, and 1‐methylsilene, strongly reactive intermediates may propagate the growth of the a‐SiCO:H film via their stepwise “head‐to‐tail” insertion to the Si‐O (in the case of 1,1‐dimethylsilanone) and Si‐C (in the case of dimethylsilylene and 1‐methylsilene) bonds in the segments of growing film. The contribution of these reactions to the formation of silicon carbide and silica films by RP‐CVD has already been described in our earlier reports …”

Efficient method for the synthesis of symmetrical α,ω-dichloro-1,1,3,3-tetraorganyldisiloxanes

“…One could suppose that DCS formation is a result of consecutive reactions However, it must be admitted that the major inter mediate product of the studied reaction is the corre sponding labile dialkylsilanone [12], which further undergoes insertion into diorganyldi chlorosilane at the Si-Cl bond…”