From diamond to crystalline silicon carbonitride: effect of introduction of nitrogen in CH4/H2 gas mixture using MW-PECVD

Oxidation electronics: bond–band–barrier correlation and its applications

“…The porous carbide with strong bond repulsion prohibits the adhesion while the buffer layer allows the diamond and Ti substrate to bond strongly. crystalline carbon-nitride formation is harder than the hexagonal SiCN crystallite [326], and that overdosed ( > 75% partial pressure) nitrogen in diamond deposition could turn the diamond to be SiCN [522]. Further results show that the surface bond contraction and the lone pair interaction play dominant roles in the extraordinary mechanical performance of the hard and self-lubricant nitride surfaces [327].…”

Effect of pressure and substrate temperature on the deposition of nano-structured silicon–carbon–nitride superhard coatings by magnetron sputtering

“…The β-C 3 N 4 and β-Si 3 N 4 having similar crystal structures are expected to be miscible in each other and form Si-C-N phase with excellent hardness. All these have rapidly increased the research activities on synthesis of Si-C-N compounds and several methods for the fabrication of amorphous and crystalline Si-C-N films are reported in literature [4][5][6][7][8][9][10]. Amongst them, microwave plasma chemical vapour deposition [4,5], plasma enhanced chemical vapour deposition [6,7], ion beam implantation [8], and magnetron sputtering [9,10] are significant and have been used for the deposition of Si-C-N film.…”

Role of silicon on the growth mechanisms of CNx and SiCN thin films by N2/CH4 microwave plasma assisted chemical vapour deposition

“…This hypothesis is confirmed by the observation made by Zhang et al [21], who show that it was not possible to obtain a crystallized CN x film on Pt substrate for example without incorporating silicon in the film. Fu et al [22] have deposited SiCN films by using Si-based gas as silicon source and have also observed that silicon catalyzes the chemical reaction and favours the retention of N in the film. Silicon is necessary to deposit films containing nitrogen, silicon and carbon on non-silicon substrate.…”