Fresnel zone plate with apodized aperture for hard X-ray Gaussian beam optics

Takeuchi, Akihisa; Uesugi, Kentaro; Suzuki, Yoshio; Itabashi, S.; Oda, Masanobu

doi:10.1107/s1600577517003289

Cited by 14 publications

(12 citation statements)

References 26 publications

(26 reference statements)

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“…The monochromatic X‐ray energy utilized was 10 keV by (111) Si double crystal monochromater. A focal beam generated by a Fresnel zone plate (FZP) was used as a probe . Typical parameters of used FZP were as follows; zone material was tantalum with 2 μm thickness, diameter was 1.5 mm, outermost zone width was 200 nm, the focal length at 10 keV was 2419 mm and the sample was set at the focal plane of the FZP (or, was set slightly behind the focal plane).…”

Section: Methodsmentioning

confidence: 99%

“…A focal beam generated by a Fresnel zone plate (FZP) was used as a probe. [52] Typical parameters of used FZP were as follows; zone material was tantalum with 2 μm thickness, diameter was 1.5 mm, outermost zone width was 200 nm, www.advancedsciencenews.com www.pss-b.com the focal length at 10 keV was 2419 mm and the sample was set at the focal plane of the FZP (or, was set slightly behind the focal plane). To cut off scattering beams, vertical and horizontal slits were also installed.…”

Section: Methodsmentioning

confidence: 99%

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Localized Photoluminescence Imaging of Bi‐Layered Cuprous/Cupric Oxide Semiconductor Films by Synchrotron Radiation

Kobayashi

Izaki

Shinagawa

et al. 2018

Physica Status Solidi (b)

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To develop multi‐layered semiconductor film devices, like a solar cell device, effects of localized impurities and layered interface mismatches on photovoltaic properties should be understood quantitatively and controlled effectively. However, the research of localized photoluminescence on layered semiconductor film devices is delayed. This is because, unfortunately, a measurement method for photoluminescence properties with spatial resolution on the sub‐micron scale, which could provide much of the local photoluminescence properties in bulk multi‐layered film semiconductor devices, has not been developed. In this study, a mapping method for local photoluminescence properties has been developed by utilizing a focused synchrotron radiation beam to evaluate localized photoluminescence affected by microstructures in bi‐layered semiconductor films. Luminescence maps of copper oxide semiconductor film which varies in emission energy and position are successfully obtained under the conditions of a focused beam size of 5 μm in width and 300 nm in height. The possibility of investigation for localized photoluminescence related with the microstructure is strongly suggested. This technique will support and enhance the development of high‐performance multi‐layered semiconductor film devices.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Localized Photoluminescence Imaging of Bi‐Layered Cuprous/Cupric Oxide Semiconductor Films by Synchrotron Radiation

Kobayashi

Izaki

Shinagawa

et al. 2018

Physica Status Solidi (b)

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“…In addition, a condenser zone plate was used to locally improve X-ray flux, and an apodization Fresnel zone plate was used to focus the X-ray in the imaging-type tomography. These X-ray imaging elements were developed at SPring-8 for ultrahigh resolution X-ray imaging; the details are described elsewhere [41,42] .…”

Section: Synchrotron X-ray Imaging and In Situ Testsmentioning

confidence: 99%

Local Deformation and Fracture Behavior of High-Strength Aluminum Alloys Under Hydrogen Influence

Shimizu

Toda

Uesugi

et al. 2019

Metall Mater Trans A

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The local deformation and fracture behavior of high-Zn Al-Zn-Mg(-Cu) alloys under hydrogen influence were investigated by in situ tests through synchrotron X-ray tomography. Intergranular and quasi-cleavage fractures were induced by hydrogen, and strain localization by the presence of cracks was not observed by 3D strain mapping. This result suggests that the strain localization at the crack tip is smaller than the measurement limit of 3D strain mapping. The average crack-tip-opening displacements, which are one of the crack driving forces specified by fracture mechanics, directly measured from the tomographic slice were 0.14 and 0.23 m for intergranular cracks and quasi-cleavage cracks, respectively. The crack driving force of the intergranular and quasi-cleavage cracks was small. The local deformation behavior at the crack tips was analyzed based on fracture mechanics. The local deformation field of the crack tip, which was characterized using the Rice-Drugan-Sham (RDS) solution rather than the Hutchinson-Rice-Rosengren (HRR) solution, was located within 20 m of the crack tip, and its size was limited. The results of this work clarify that the intergranular and quasi-cleavage crack growth are caused by small driving forces; however, this behavior is not perfectly brittle, accompanying local deformation at the crack tip.

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“…However, spatial resolution was limited and deemed insufficient. Currently, scanning X-ray microscopy at a synchrotron radiation facility is available, with a 65 nm-size focusing beam [ 11 ]. We proposed and applied an imaging technique for local photoluminescence mapping by means of a high-intensity focused X-ray at the undulator beam line in the Japanese synchrotron radiation facility, SPring-8, in our previous research [ 12 ].…”

Section: Introductionmentioning

confidence: 99%

High-Resolution Mapping of Local Photoluminescence Properties in CuO/Cu2O Semiconductor Bi-Layers by Using Synchrotron Radiation

et al. 2021

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The quality of a semiconductor, which strongly affects its performance, can be estimated by its photoluminescence, which closely relates to the defect and impurity energy levels. In light of this, it is necessary to have a measurement method for photoluminescence properties with spatial resolution at the sub-micron or nanoscale. In this study, a mapping method for local photoluminescence properties was developed using a focused synchrotron radiation X-ray beam to evaluate localized photoluminescence in bi-layered semiconductors. CuO/Cu2O/ZnO semiconductors were prepared on F:SnO2/soda-lime glass substrates by means of electrodeposition. The synchrotron radiation experiment was conducted at the beamline 20XU in the Japanese synchrotron radiation facility, SPring-8. By mounting the high-sensitivity spectrum analyzer near the edge of the CuO/Cu2O/ZnO devices, luminescence maps of the semiconductor were obtained with unit sizes of 0.3 μm × 0.3 μm. The devices were scanned in 2D. Light emission 2D maps were created by classifying the obtained spectra based on emission energy already reported by M. Izaki, et al. Band-like structures corresponding to the stacking layers of CuO/Cu2O/ZnO were visualized. The intensities of emissions at different energies at each position can be associated with localized photovoltaic properties. This result suggests the validity of the method for investigation of localized photoluminescence related to the semiconductor quality.

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Fresnel zone plate with apodized aperture for hard X-ray Gaussian beam optics

Cited by 14 publications

References 26 publications

Localized Photoluminescence Imaging of Bi‐Layered Cuprous/Cupric Oxide Semiconductor Films by Synchrotron Radiation

Localized Photoluminescence Imaging of Bi‐Layered Cuprous/Cupric Oxide Semiconductor Films by Synchrotron Radiation

Local Deformation and Fracture Behavior of High-Strength Aluminum Alloys Under Hydrogen Influence

High-Resolution Mapping of Local Photoluminescence Properties in CuO/Cu2O Semiconductor Bi-Layers by Using Synchrotron Radiation

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