Frequency Reconfigurable High Power Gan/Algan Hemt Based Self Oscillating Active Integrated Antenna

Kumari, Rakhi; Basu, Ananjan; Koul, and Shiban Kishen

doi:10.2528/pierl21011303

Cited by 2 publications

(1 citation statement)

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“…Other benefits include increasing the effective length of short antennas, increasing the bandwidth, improving the noise factor, impedance matching, and increasing receiver antenna sensitivity. One such integrated design is the active integrated antenna (AIA), a novel technology that combines microstrip antennas with active solid-state electronics and microwave components to provide a variety of useful functionalities [ 8 , 9 , 10 , 11 , 12 ]. Integrated antenna design has been introduced to improve the efficiency of front-end systems and exists in recent times in the form of filtering antennas, rectifying antennas, power amplifier antennas, and low noise amplifier (LNA) antennas [ 13 , 14 , 15 , 16 , 17 ].…”

Section: Introductionmentioning

confidence: 99%

Testing and Analysis of MOSFET-Based Absorber Integrated Antenna for 5G/WiMAX/WLAN Applications

Omoru

Srivastava

2022

Nanomaterials

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A 3D electromagnetic circuit design and analysis of a MOSFET-based absorber active integrated antenna has been performed. It integrates a transmitting dual-band double material substrate (DMS) cylindrical surrounding patch antenna (CSPA) with a MOSFET-based absorber of reflected radio frequency power. It is a solution to the problem of performance degradation in the power amplifier (PA) resulting from antenna and PA impedance mismatch. This fully integrated MOSFET-based absorber antenna can absorb reflected RF power with a diode-based quasi-circulator as part of the integrated design circuitry. The antenna used for the proposed integrated design will operate at frequencies ranging from 2 GHz to 3 GHz and from 4.6 GHz to 6.1 GHz, thus providing a bandwidth of 1 GHz and 1.5 GHz at a resonance frequency of 2.5 GHz and 5.3 GHz, respectively. This makes it suitable for use in lower and upper bands of WLAN/WiMAX medium RF front-end applications. Furthermore, the condition for MOSFET connected to the absorber (IS ≤ ID and VDS = 0) has been satisfied at both instances of resonance. In this proposed design, an antenna radiation efficiency of 84% has been observed.

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