Frequency locking of semiconductor lasers to RF oscillators using hybrid-integrated opto-electronic oscillators with dispersive delay lines

Xuan, Zhe; Du, Lixiong; Aflatouni, Firooz

doi:10.1364/oe.27.010729

Cited by 16 publications

(14 citation statements)

References 15 publications

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“…37 In addition, Si photonics offers compatibility with CMOS technology, and the electrical components in the OEO, including the EA, EC, and power splitter (PS), can be monolithically integrated into the chip. 38,39 By doing so, a fully monolithically integrated OEO with low phase noise can be achieved.…”

Section: Results Of the On-chip Tunable Pt-symmetric Oeomentioning

confidence: 99%

On-chip tunable parity‐time symmetric optoelectronic oscillator

Wang

Xiao²,

Xu³

et al. 2023

Adv. Photon. Nexus

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Parity-time (PT) symmetry breaking offers mode selection capability for facilitating single-mode oscillation in the optoelectronic oscillator (OEO) loop. However, most OEO implementations depend on discrete devices, which impedes proliferation due to size, weight, power consumption, and cost. In this work, we propose and experimentally demonstrate an on-chip tunable PT-symmetric OEO. A tunable microwave photonic filter, a PT-symmetric mode-selective architecture, and two photodetectors are integrated on a silicon-on-insulator chip. By exploiting an on-chip Mach-Zehnder interferometer to match the gain and loss of two mutually coupled optoelectronic loops, single-mode oscillation can be obtained. In the experiment, the oscillation frequency of the on-chip tunable PT-symmetric OEO can be tuned from 0 to 20 GHz. To emulate the integrated case, the OEO loop length is minimized, and no extra-long fiber is used in the experiment. When the oscillation frequency is 13.67 GHz, the single-sideband phase noise at 10-kHz offset frequency is −80.96 dBc∕Hz and the side mode suppression ratio is 46 dB. The proposed on-chip tunable PT-symmetric OEO significantly reduces the footprint of the system and enhances mode selection.

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Section: Results Of the On-chip Tunable Pt-symmetric Oeomentioning

confidence: 99%

On-chip tunable parity‐time symmetric optoelectronic oscillator

Wang

Xiao²,

Xu³

et al. 2023

Adv. Photon. Nexus

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“…The measured SSB phase noise was -81 dBc/Hz at a 10 kHz offset from the 4.74 GHz RF carrier signal. On the other hand, a photonic and electronic hybrid OEO was presented in 2019 [86]. In this configuration, the OEO consisted of photonic and electronic chips that were fabricated separately.…”

Section: Photonic Integrated Chipmentioning

confidence: 99%

“…As can be clearly seen from the SSB phase noise measurements of the integrated OEO [84][85][86], although the integrated OEOs provide the opportunity to reduce the size and enable mass production of the OEO in the chip, they unfortunately have poor short-term stability in the microwave range. However, due to their small size, the long-term stability of the OEO can be easily improved by temperature stabilization of the chip.…”

Section: Photonic Integrated Chipmentioning

confidence: 99%

Opto-Electronic Oscillators for Micro- and Millimeter Wave Signal Generation

Ilgaz

Batagelj

2021

Electronics

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High-frequency signal oscillators are devices needed for a variety of scientific disciplines. One of their fundamental requirements is low phase noise in the micro- and millimeter wave ranges. The opto-electronic oscillator (OEO) is a good candidate for this, as it is capable of generating a signal with very low phase noise in the micro- and millimeter wave ranges. The OEO consists of an optical resonator with electrical feedback components. The optical components form a delay line, which has the advantage that the phase noise is independent of the oscillator’s frequency. Furthermore, by using a long delay line, the phase noise characteristics of the oscillator are improved. This makes it possible to widen the range of possible OEO applications. In this paper we have reviewed the state of the art for OEOs and micro- and millimeter wave signal generation as well as new developments for OEOs and the use of OEOs in a variety of applications. In addition, a possible implementation of a centralized OEO signal distribution as a local oscillator for a 5G radio access network (RAN) is demonstrated.

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“…A few successful examples include an integrated imager [9] implemented using nanophotonic delay elements, and partially integrated beamformers with tunable optical delay lines based on cascaded ring resonators [10] and Mach-Zehnder Interferometers [11]. Similarly, OEOs integrated on platforms such as Silicon on Insulator (SOI) and Indium Phosphide [12][13][14] have previously been reported. In [12], a thermally tunable OEO, based on micro disk resonators, was shown to have a frequency range of 3-8GHz.…”

Section: Introductionmentioning

confidence: 99%

“…In [12], a thermally tunable OEO, based on micro disk resonators, was shown to have a frequency range of 3-8GHz. In [14], a hybrid integrated OEO with a dispersive delay line was used to frequency lock a laser to a RF oscillator.…”

Section: Introductionmentioning

confidence: 99%

Wideband Rapidly Tunable Delay-Controlled Optoelectronic Oscillator

Sanjari

Aflatouni

2020

IEEE Photonics J.

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With the recent advancements in photonic integrated circuits, integrated RF photonics has increasingly been considered as a viable avenue to meet the demands of many emerging applications in telecommunication, sensing and signal processing. In this paper, an integrated, rapidly tunable, wideband optical delay line is used to implement an optoelectronic oscillator that can be continuously tuned from 594MHz to 634MHz. The oscillator exhibits a relatively flat modulation response at high frequencies (larger than 400MHz), accommodating wideband fast frequency chirp generation with applications in radar and imaging. The on-chip variable delay line is characterized by continuously delaying an ultra-wide band 0.5-5GHz monocycle pulse between 0-100ps. The photonic integrated chip consists of silicon nanowaveguides, phase modulators, multimode interference coupler, a Mach-Zehnder interferometer, and a photodiode. The chip is fabricated on IME 180nm Silicon Photonics platform and has an area of 0.55mm 2 .

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Frequency locking of semiconductor lasers to RF oscillators using hybrid-integrated opto-electronic oscillators with dispersive delay lines

Cited by 16 publications

References 15 publications

On-chip tunable parity‐time symmetric optoelectronic oscillator

On-chip tunable parity‐time symmetric optoelectronic oscillator

Opto-Electronic Oscillators for Micro- and Millimeter Wave Signal Generation

Wideband Rapidly Tunable Delay-Controlled Optoelectronic Oscillator

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