Frequency Limitations of Resonant-Tunnelling Diodes in Sub-THz and THz Oscillators and Detectors

Feiginov, M.

doi:10.1007/s10762-019-00573-5

Cited by 64 publications

(46 citation statements)

References 88 publications

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“…The speed of the P/E cycle is noteworthy, and is 2000× faster than previous devices [6]. As the speed of quantum tunneling is in the sub-picosecond scale [13], the switching speed is limited by the RC time constant, and is, therefore, subject to Dennard's scaling law (scaling linearly with the area) [14]. Thus, for a 20-nm gate length device with ideal scaling subnanosecond switching speed is predicted-significantly faster than DRAM and comparable to static RAM (SRAM) [1], [2], [12].…”

Section: Low Voltage P/ementioning

confidence: 81%

ULTRARAM: Toward the Development of a III–V Semiconductor, Nonvolatile, Random Access Memory

Lane

Hodgson

Potter

et al. 2021

IEEE Trans. Electron Devices

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ULTRARAM is a III−V compound semiconductor memory concept that exploits quantum resonant tunneling to achieve nonvolatility at extremely low switching energy per unit area. Prototype devices are fabricated in a 2 × 2 memory array formation on GaAs substrates. The devices show 0/1 state contrast from program/erase (P/E) cycles with 2.5 V pulses of 500-µs duration, a remarkable switching speed for a 20 µm gate length. Memory retention is tested for 8 × 10 4 s, whereby the 0/1 states show adequate contrast throughout, whilst performing 8 × 10 4 readout operations. Further reliability is demonstrated via program-read-erase-read endurance cycling for 10 6 cycles with 0/1 contrast. A half-voltage array architecture proposed in our previous work is experimentally realized, with an outstandingly small disturb rate over 10 5 half-voltage cycles.

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Section: Low Voltage P/ementioning

confidence: 81%

ULTRARAM: Toward the Development of a III–V Semiconductor, Nonvolatile, Random Access Memory

Lane

Hodgson

Potter

et al. 2021

IEEE Trans. Electron Devices

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“…In the derivation of this formula,

is phenomenologically introduced by assuming that electrons are affected only by the time delay

at resonant tunneling [ 65 ]. A detailed analysis for a more exact treatment is a future subject, including, for example, the potential change due to electron accumulation in the well [ 67 , 68 ], photon-assisted tunneling [ 69 , 70 , 71 ], and so on, or more precise quantum-mechanical analyses [ 72 , 73 , 74 ]. In fact, the experimental result of the frequency dependence of

[ 52 ] slightly deviated from the above formula, although more experimental data are needed.…”

Section: Structure Oscillation Principle and Oscillation Charactmentioning

confidence: 99%

Terahertz Emitter Using Resonant-Tunneling Diode and Applications

Asada

Suzuki

2021

Sensors

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A compact source is important for various applications utilizing terahertz (THz) waves. In this paper, the recent progress in resonant-tunneling diode (RTD) THz oscillators, which are compact semiconductor THz sources, is reviewed, including principles and characteristics of oscillation, studies addressing high-frequency and high output power, a structure which can easily be fabricated, frequency tuning, spectral narrowing, different polarizations, and select applications. At present, fundamental oscillation up to 1.98 THz and output power of 0.7 mW at 1 THz by a large-scale array have been reported. For high-frequency and high output power, structures integrated with cylindrical and rectangular cavities have been proposed. Using oscillators integrated with varactor diodes and their arrays, wide electrical tuning of 400–900 GHz has been demonstrated. For spectral narrowing, a line width as narrow as 1 Hz has been obtained, through use of a phase-locked loop system with a frequency-tunable oscillator. Basic research for various applications—including imaging, spectroscopy, high-capacity wireless communication, and radar systems—of RTD oscillators has been carried out. Some recent results relating to these applications are discussed.

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“…As for THz emitters, semiconducting solid state devices such as resonant tunneling diodes (RTDs) [ 7 , 8 , 9 , 10 ] and quantum cascade lasers (QCLs) [ 11 , 12 , 13 , 14 ] have been well developed. Nowadays RTDs with sub-mW levels of output power operating at room temperature can be obtained.…”

Section: Introductionmentioning

confidence: 99%

Study of Radiation Characteristics of Intrinsic Josephson Junction Terahertz Emitters with Different Thickness of Bi2Sr2CaCu2O8+δ Crystals

et al. 2021

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The radiation intensity from the intrinsic Josephson junction high-Tc superconductor Bi2Sr2CaCu2O8+δ terahertz emitters (Bi2212-THz emitters) is one of the most important characteristics for application uses of the device. In principle, it would be expected to be improved with increasing the number of intrinsic Josephson junctions N in the emitters. In order to further improve the device characteristics, we have developed a stand alone type of mesa structures (SAMs) of Bi2212 crystals. Here, we understood the radiation characteristics of our SAMs more deeply, after we studied the radiation characteristics from three SAMs (S1, S2, and S3) with different thicknesses. Comparing radiation characteristics of the SAMs in which the number of intrinsic Josephson junctions are N∼ 1300 (S1), 2300 (S2), and 3100 (S3), respectively, the radiation intensity, frequency as well as the characteristics of the device working bath temperature are well understood. The strongest radiation of the order of few tens of microwatt was observed from the thickest SAM of S3. We discussed this feature through the N2-relationship and the radiation efficiency of a patch antenna. The thinner SAM of S1 can generate higher radiation frequencies than the thicker one of S3 due to the difference of the applied voltage per junctions limited by the heat-removal performance of the device structures. The observed features in this study are worthwhile designing Bi2212-THz emitters with better emission characteristics for many applications.

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Frequency Limitations of Resonant-Tunnelling Diodes in Sub-THz and THz Oscillators and Detectors

Cited by 64 publications

References 88 publications

ULTRARAM: Toward the Development of a III–V Semiconductor, Nonvolatile, Random Access Memory

ULTRARAM: Toward the Development of a III–V Semiconductor, Nonvolatile, Random Access Memory

Terahertz Emitter Using Resonant-Tunneling Diode and Applications

Study of Radiation Characteristics of Intrinsic Josephson Junction Terahertz Emitters with Different Thickness of Bi2Sr2CaCu2O8+δ Crystals

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