Frequency dependent negative capacitance effect and dielectric properties of swift heavy ion irradiated Ni/oxide/n-GaAs Schottky diode

Bobby, A.; Shiwakoti, N.; Verma, Shailendra Kumar; Asokan, K.; Antony, Bobby

doi:10.1016/j.physb.2016.02.022

Cited by 13 publications

(4 citation statements)

References 35 publications

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“…Beyond 5 MHz, the capacitance turns negative due to some inductive effect at the interface. A similar observation is reported in the Ni/n-GaAs Schottky diode, where the origin of negative capacitance is attributed to the dominance of deep trap states with longer relaxation times that create a non-ideal phase lag of current leading to an inductive effect [62,63]. The conductance is bias independent and shoots up after 5 MHz, where capacitance turns negative (see figure 4(c)).…”

Section: Resultssupporting

confidence: 78%

Demonstration of compensated n-type scandium nitride Schottky diodes

Rao¹,

Acharya²,

Saha³

2023

J. Phys. D: Appl. Phys.

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Scandium nitride is an emerging group III-B transition metal pnictide and has been studied extensively for its thermoelectric properties, as interlayers for defect-free GaN growth, in epitaxial metal/semiconductor superlattices, and recently for its polaritonic and optoelectronic synaptic functionalities. However, to realize the full potential of its semiconducting properties in electronic, thermionic, and optoelectronic device applications, it is necessary to develop Schottky diodes of ScN that are missing thus far. Here we show Schottky diodes of ScN with elemental metals such as silver (Ag) and gold (Au). As-deposited ScN thin films exhibit a high electron concentration in the (1-4) × 1020 cm-3 range due to unintentional oxygen doping. These excess electrons are compensated by Mg hole doping, leading to a wider depletion region at the metal/ScN interface for activated electronic transport. Current-voltage (I-V) characteristics show the rectification nature in ScN/Ag and ScN/Au diodes, and the barrier heights of 0.55± 0.05 eV and 0.53± 0.06 eV, respectively, are obtained. Interface annealing with time and temperature results in a slight increase in the forward junction potential. The capacitance-voltage (C-V) measurements also revealed the presence of interface trap states. The demonstration of Schottky diodes marks an important step in realizing the full potential of ScN in electronic, thermionic, and optoelectronic devices.

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Section: Resultssupporting

confidence: 78%

Demonstration of compensated n-type scandium nitride Schottky diodes

Rao¹,

Acharya²,

Saha³

2023

J. Phys. D: Appl. Phys.

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“…Schottky junctions are one of the simplest rectifying systems, which can easily be processed between a metal and a semiconductor. NC is typically observed when a Schottky diode is forward biased at low frequencies, but its exact origin is still a matter of discussion [ 23 ]. An additional metallic contact is needed to integrate Schottky junctions into electronic devices, thus forming a metal-semiconductor-metal (MSM) system.…”

Section: Introductionmentioning

confidence: 99%

Evidence of Negative Capacitance and Capacitance Modulation by Light and Mechanical Stimuli in Pt/ZnO/Pt Schottky Junctions

Joly

Girod

Adjeroud

et al. 2021

Sensors

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We report on the evidence of negative capacitance values in a system consisting of metal-semiconductor-metal (MSM) structures, with Schottky junctions made of zinc oxide thin films deposited by Atomic Layer Deposition (ALD) on top of platinum interdigitated electrodes (IDE). The MSM structures were studied over a wide frequency range, between 20 Hz and 1 MHz. Light and mechanical strain applied to the device modulate positive or negative capacitance and conductance characteristics by tuning the flow of electrons involved in the conduction mechanisms. A complete study was carried out by measuring the capacitance and conductance characteristics under the influence of both dark and light conditions, over an extended range of applied bias voltage and frequency. An impact-loss process linked to the injection of hot electrons at the interface trap states of the metal-semiconductor junction is proposed to be at the origin of the apparition of the negative capacitance values. These negative values are preceded by a local increase of the capacitance associated with the accumulation of trapped electrons at the interface trap states. Thus, we propose a simple device where the capacitance values can be modulated over a wide frequency range via the action of light and strain, while using cleanroom-compatible materials for fabrication. These results open up new perspectives and applications for the miniaturization of highly sensitive and low power consumption environmental sensors, as well as for broadband impedance matching in radio frequency applications.

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“…At 250 K, for example, dielectric constant is about 6.51 for as grown and 5.28 for gamma irradiated Schottky diodes. Gamma irradiation decreases existing disorder in as grown diodes and improves interface quality by annealing interface traps (Bobby et al, 2016). Dependence of dielectric constant on frequency is shown only for as grown Ti/Au/GaAsN Schottky diodes and not on γ-rays irradiated ones.…”

Section: Resultsmentioning

confidence: 90%

“…This is attributed to a decrease in donor concentration and to a change in dielectric constant at metal semiconductor interface after gamma irradiation (Shiwakoti et al, 2017). Capacitance also decreased with decreasing temperature due to a continuous distribution of density of interface states (Nss) and change in series resistance (Bobby et al, 2016).…”

Section: Resultsmentioning

confidence: 99%

γ-rays irradiation effects on dielectric properties of Ti/Au/GaAsN Schottky diodes with 1.2%N

Teffahi

Hamri

Djeghlouf

et al. 2018

Radiation Physics and Chemistry

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Dielectric properties of As grown and irradiated Ti /Au/GaAsN Schottky diodes with 1.2%N are investigated using capacitance/conductance-voltage measurements in 90 -290 K temperature range and 50-2000 kHz frequency range. Extracted parameters are interface state density, series resistance, dielectric constant, dielectric loss, tangent loss and ac conductivity. It is shown that exposure to γ-rays irradiation leads to reduction in effective trap density believed to result from radiation-induced traps annulations. An increase in series resistance is attributed to a net doping reduction. Dielectric constant (ε') shows usual step-like transitions with corresponding relaxation peaks in dielectric loss. These peaks shift towards lower temperature as frequency decrease. Temperature dependent ac conductivity followed an Arrhenius relation with activation energy of 153 meV in the 200-290 K temperature range witch correspond to As vacancy. The results indicate that γ-rays irradiation improves the dielectric and electrical properties of the diode due to the defect annealing effect.

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Frequency dependent negative capacitance effect and dielectric properties of swift heavy ion irradiated Ni/oxide/n-GaAs Schottky diode

Cited by 13 publications

References 35 publications

Demonstration of compensated n-type scandium nitride Schottky diodes

Demonstration of compensated n-type scandium nitride Schottky diodes

Evidence of Negative Capacitance and Capacitance Modulation by Light and Mechanical Stimuli in Pt/ZnO/Pt Schottky Junctions

γ-rays irradiation effects on dielectric properties of Ti/Au/GaAsN Schottky diodes with 1.2%N

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