Frequency-dependent electrical parameters and extracted voltage-dependent surface states in Al/DLC/p-Si structure using the conductance method

Asar, Yasemin Şafak; Vahid, A. Feizollahi; Başman, Necati; Çetinkaya, H.G.; Altındal, Ş.

doi:10.1007/s00339-023-06639-5

Cited by 12 publications

(1 citation statement)

References 41 publications

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“…DLC films, which are also delineated as amorphous forms of carbon materials, take place in many applications such as magnetic storage disks, wearresistant films, biomedical coatings, and optical coatings (Basman et al, 2015;Zeng et al, 2014;Zhang et al, 2020). In a study in which DLC layer was electrochemically grown and used as an interlayer in Al/(DLC)/p-Si/Au MIS type structure, the electrical parameters of the structure were calculated, and it was concluded that the electrodeposited DLC interlayer can be used to reduce surface states or dislocations instead of the commonly used oxide/insulator interlayer (Şafak Asar et al, 2023). In another study, the electrical parameters of the MS structure using Ti doped DLC interlayer were investigated in the 1kHz-4kHz range by impedancespectroscopy method.…”

Section: Introductionmentioning

confidence: 99%

Impedance Response and Phase Angle Determination of Metal-Semiconductor Structure with N-Doped Diamond Like Carbon Interlayer

Urgun,

Vahid,

Alsmael

et al. 2024

Gazi University Journal of Science Part A: Engineering and Innovation

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Schottky Barrier Diodes have been studied largely in literature for their superior properties over p-n barriers in a wide range of components like solar cells, sensors, gate stacks of FETs, back-end-switch arrays, and super capacitor applications basically as a test tool to produce better performance devices. The main performance parameter of these devices is measured by their conduction mechanisms under desired conditions like temperature, pressure, voltage, frequency and radiation. And one of the pivotal enhancements on device performance is provided by interlayer addition through the sandwich design. And presence of these interlayers with on-purpose impurities, develops even more control of conduction mechanisms over semiconducting and metal layers. As an adjustable host material for impurity atoms, DLC, which also has outstanding specifications under thermal, chemical and physical conditions, is a good candidate for interlayer tailoring specifically when used with doping atoms like nitrogen (N), copper (Cu), gold (Au), titanium (Ti) and silicone (Si). This study investigates the impedance response of the fabricated device with an N-doped DLC interlayer. The results revealed that the reminiscent matrixial distribution of charges should be affecting the conduction path through horizontal and vertical dielectric relaxation appearance with altering relative permittivity due to different bond formations between different phases of the same material in the insulating layer. The supported results by phase angle changes, showing frequency-adjustable working conditions offer that the selective electrical conduction can be tuned.

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Section: Introductionmentioning

confidence: 99%

Impedance Response and Phase Angle Determination of Metal-Semiconductor Structure with N-Doped Diamond Like Carbon Interlayer

Urgun,

Vahid,

Alsmael

et al. 2024

Gazi University Journal of Science Part A: Engineering and Innovation

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The frequency dependent complex dielectric and electric modulus properties of Au/P3HT/n-Si (MPS) Schottky barrier diode (SBD)

Yükseltürk

Bengi

2023

J Mater Sci: Mater Electron

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Frequency-dependent physical parameters, the voltage-dependent profile of surface traps, and their lifetime of Au/(ZnCdS-GO:PVP)/n-Si structures by using the conductance method

Güçlü,

Tanrıkulu,

Ulusoy

et al. 2024

J Mater Sci: Mater Electron

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In this study, frequency-dependent physical parameters, voltage-dependent of surface traps/states, and their lifetime of the Au/(ZnCdS-GO:PVP)/n-Si (MPS) type structures were investigated by using conductance measurements (Y = 1/Z = G + jωC) both in wide range frequency (3 kHz-3 MHz) and voltage (from − 4.00 V to 1.50 V). Firstly, basic physical parameters such as density of doping donor atoms (ND), diffusion potential (VD), Fermi-energy (EF), barrier height ΦB(C-V), depletion-layer thickness (WD), and maximum electric field (Em) were calculated from these measurements for each frequency. These values were found as 1.69 × 1016 cm−3, 0.444 eV, 0.193 eV, 0.606 eV, 1.31 × 10−5 cm, 7.66 × 104 V/cm for 10 kHz, and 1.42 × 1016 cm−3, 0.461 eV, 0.198 eV, 0.628 eV, 1.46 × 10−5 cm, 7.80 × 104 V/cm for 3 MHz, respectively. While ND decreases with increasing frequency, the other parameters increase. The density of surface states (Nss) and their lifetimes (τ) were also obtained from conductance techniques. While the Nss were changed between 2.78 × 1012 at 0.40 V and 2.61 × 1012 eV-1cm−2 at 1.3 V, and the Nss-V curve shows two distinctive peaks which correspond to 0.5 V (2.87 × 1012 eV−1cm−2) and 1.2 V (2.68 × 1012 eV−1cm−2), respectively. The values of τ were changed between 105 µs (at 0.4 V) and 15.3 µs (at 1.3 V) and decreased with increasing voltage as exponentially. These lower values of Nss were attributed to the used (ZnCdS-GO:PVP) interlayer.

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Frequency-dependent electrical parameters and extracted voltage-dependent surface states in Al/DLC/p-Si structure using the conductance method

Cited by 12 publications

References 41 publications

Impedance Response and Phase Angle Determination of Metal-Semiconductor Structure with N-Doped Diamond Like Carbon Interlayer

Impedance Response and Phase Angle Determination of Metal-Semiconductor Structure with N-Doped Diamond Like Carbon Interlayer

The frequency dependent complex dielectric and electric modulus properties of Au/P3HT/n-Si (MPS) Schottky barrier diode (SBD)

Frequency-dependent physical parameters, the voltage-dependent profile of surface traps, and their lifetime of Au/(ZnCdS-GO:PVP)/n-Si structures by using the conductance method

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