Frequency Dependence of the Impedance of Distributed Surface States in Mos Structures

Lehovec, K.

doi:10.1063/1.1754476

Cited by 145 publications

(38 citation statements)

References 8 publications

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“…Therefore, we consider the AC properties of the SM BHJ solar cells in the scope of the interface state continuum model and appropriate AC equivalent circuit ( Figure 6) [26,34]. The admittance of interface state continuum Y s is given by the following equation [26,34]:…”

Section: Impedance and Capacitance Spectroscopymentioning

confidence: 99%

Quantifying interface states and bulk defects in high‐efficiency solution‐processed small‐molecule solar cells by impedance and capacitance characteristics

Брус

Kyaw

Maryanchuk

et al. 2015

Progress in Photovoltaics

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The AC properties of high-efficiency (η = 8.01% under standard 100 mW/cm 2 AM1.5 illumination) small-molecule bulk heterojunction (SM BHJ) solar cells (p-DTS(FBTTh 2 ) 2 /PC 70 BM) at different DC biases and frequencies of small amplitude (±10 mV) AC signal in the dark at room temperature were investigated in details. We showed the presence of interface states at the heterojunction interface and determined their parameters from the analysis of spectral distributions of real and imaginary components of the measured impedance. The dielectric constant of BHJ ε BHJ = 2.9 was determined from the geometrical capacitance of totally depleted BHJ layer. We explained quantitatively the effect of interface states and series resistance on the measured C-V characteristics of the SM BHJ solar cells at both low and high frequencies. The quantitative value of the density of defect states in the bulk N = 1.05 × 10 16 cm À3 was determined from the high frequency C-V characteristic corrected by the effect of the series resistance.

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Section: Impedance and Capacitance Spectroscopymentioning

confidence: 99%

Quantifying interface states and bulk defects in high‐efficiency solution‐processed small‐molecule solar cells by impedance and capacitance characteristics

Брус

Kyaw

Maryanchuk

et al. 2015

Progress in Photovoltaics

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“…The interface trap density contributes an equivalent parallel interface trap capacitance, C it ͑ , s ͒, and equivalent parallel conductance G p ͑ , s ͒, respectively. 32 The frequency dependence is related to the characteristic trap response time, =2 / , where is the angular frequency ͑ =2f͒. The trap response time is given by the Shockley-Read-Hall statistics of capture and emission rates: 6 The circuit model shown in Fig.…”

Section: Methods To Determine the D It At High-k / Ingaas Interfacesmentioning

confidence: 99%

Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces

Engel‐Herbert

Hwang

Stemmer

2010

Journal of Applied Physics

372

273

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Methods to extract trap densities at high-permittivity ͑k͒ dielectric/III-V semiconductor interfaces and their distribution in the semiconductor band gap are compared. The conductance method, the Berglund intergral, the Castagné-Vapaille ͑high-low frequency͒, and Terman methods are applied to admittance measurements from metal oxide semiconductor capacitors ͑MOSCAPs͒ with high-k / In 0.53 Ga 0.47 As interfaces with different interface trap densities. The results are discussed in the context of the specifics of the In 0.53 Ga 0.47 As band structure. The influence of different conduction band approximations for determining the ideal capacitance-voltage ͑CV͒ characteristics and those of the MOSCAP parameters on the extracted interface trap density are investigated. The origins of discrepancies in the interface trap densities determined from the different methods are discussed. Commonly observed features in the CV characteristics of high-k / In 0.53 Ga 0.47 As interfaces are interpreted and guidelines are developed to obtain reliable estimates for interface trap densities and the degree of Fermi level ͑un͒pinning for high-k / In 0.53 Ga 0.47 As interfaces.

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“…In reality, they are spread throughout the bandgap, and the admittance for a continuum of states of density N S (E) in the bandgap is given by Ref. 5:…”

Section: Intermodulation Distortion In Undersea Cablementioning

confidence: 99%

Transistor Surface Effects Responsible for Anomalous Third-Order Intermodulation Distortion in Undersea Cable Telephone System

Duff¹,

Olson²

1979

Bell System Technical Journal

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Frequency Dependence of the Impedance of Distributed Surface States in Mos Structures

Cited by 145 publications

References 8 publications

Quantifying interface states and bulk defects in high‐efficiency solution‐processed small‐molecule solar cells by impedance and capacitance characteristics

Quantifying interface states and bulk defects in high‐efficiency solution‐processed small‐molecule solar cells by impedance and capacitance characteristics

Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces

Transistor Surface Effects Responsible for Anomalous Third-Order Intermodulation Distortion in Undersea Cable Telephone System

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