2015 IEEE International Reliability Physics Symposium 2015
DOI: 10.1109/irps.2015.7112830
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Frequency and voltage effects on SER on a 65nm Sparc-V8 microprocessor under radiation test

Abstract: We present both heavy ion and alpha test results for SPARCV8 pipelined-microprocessors fabricated in a space CMOS 65nm platform. Two design implementations, standard and radiation-hardened, are compared at 50/300MHz and 0.8V/1.2V. The dominant failure modes are identified and the failure cross-section is compared with fault injection prediction.

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