Frequency and intensity noise in injection-locked semiconductor lasers: Theory and experiments

Spanó, P.; Piazzolla, S.; Tamburrini, M.

doi:10.1109/jqe.1986.1072982

Cited by 79 publications

(25 citation statements)

References 29 publications

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“…In the general case, the damping effects should be included in theory. This was not the case in previous publications such as [9] and [10].…”

Section: Theorycontrasting

confidence: 68%

“…The difference is that, in addition to the maximum appearing at the resonant frequency of the injection-locked slave laser, another peak appears at the resonant frequency of the master laser. This result has also been reached in [10] and can be understood in connection with the fact that the noise characteristics of the master laser are included in the determination of the slave laser noise in the stable-locking condition. An interesting feature observed in Fig.…”

Section: Resultsmentioning

confidence: 53%

“…It can be seen that, in the low-frequency side, the injection-locked RIN exhibits approximately a constant level, whatever the injection parameters (injection level and frequency detuning). But, in contrast to the general view of [10], the constant value does not necessarily correspond to the master laser RIN. In the high-frequency side, Figs.…”

Section: Resultsmentioning

confidence: 75%

“…The elements in (10) are given by where and denote the steady-state average values of the normalized photon and electron densities inside the slave laser cavity, respectively. The other parameters are given by and , the ratio being defined as the injection level.…”

Section: Appendix Bmentioning

confidence: 99%

See 3 more Smart Citations

Noise characteristics of single-mode semiconductor lasers under external light injection

Yabre

Waardt²,

Boom

et al. 2000

IEEE J. Quantum Electron.

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“…In the general case, the damping effects should be included in theory. This was not the case in previous publications such as [9] and [10].…”

Section: Theorycontrasting

confidence: 68%

Section: Resultsmentioning

confidence: 53%

Section: Resultsmentioning

confidence: 75%

Section: Appendix Bmentioning

confidence: 99%

See 2 more Smart Citations

Noise characteristics of single-mode semiconductor lasers under external light injection

Yabre

Waardt²,

Boom

et al. 2000

IEEE J. Quantum Electron.

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“…6 However, little experimental work on the relative inten sity noise �RIN� and the variation of the relaxation oscilla tion frequency for injection-locked semiconductor lasers are available in the literature. 4,7 Several theoretical simulations of noise characteristics have been reported, 4,[8][9][10][11] with one of them predicting the relaxation frequency enhancement. 4 In this letter, we report experimental results and theoretical cal culations of RIN spectra of an injection-locked Fabry-Pérot �FP� laser, and show very good agreement between the theory and experiment.…”

mentioning

confidence: 99%

Relative intensity noise characteristics of injection-locked semiconductor lasers

Jin

Chuang

2000

Applied Physics Letters

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An experimental and theoretical study of relative intensity noise �RIN� spectra of side-mode injection-locked Fabry-Pérot semiconductor lasers is reported. It is shown that the injection-locking technique effectively increases the relaxation oscillation frequency from 4.5 GHz �free-running mode� to 12 GHz �injection-locked mode� and enhances relaxation peaks of the slave laser RIN spectra. Results from our theoretical model, which include the key parameters for semiconductor quantum-well lasers, such as the linewidth enhancement factor, the nonlinear gain saturation coefficients, and optical confinement factor, show good agreement with our experimental results. © 2000 American Institute of Physics. �S0003-6951�00�03435-5� Considerable attention has recently been paid to injec tion locking in semiconductor lasers due to the desire to develop broader-bandwidth laser systems. Several studies have predicted that the modulation bandwidth of strongly injection-locked semiconductor lasers can be significantly improved compared to the free-running case. 1,2 This is very attractive since it may allow one to achieve large modulation bandwidths with conventional semiconductor lasers at room temperature, avoiding the use of advanced devices and the need for complicated fabrication techniques. Injection lock ing influencing the modulation bandwidth of semiconductor lasers was shown experimentally and theoretically. 3 Simpson and Liu indirectly observed the increase of the relaxation frequency 1 and presented the noise reduction for an injection-locked laser. 4 Meng, Chau, and Wu 5 reported ex perimental data directly demonstrating the improvement of modulation responses. Measurements of the eye diagrams of injection-locked lasers also confirm the bandwidth improvement. 6 However, little experimental work on the relative inten sity noise �RIN� and the variation of the relaxation oscilla tion frequency for injection-locked semiconductor lasers are available in the literature. 4,7 Several theoretical simulations of noise characteristics have been reported, 4,8-11 with one of them predicting the relaxation frequency enhancement. 4 In this letter, we report experimental results and theoretical cal culations of RIN spectra of an injection-locked Fabry-Pérot �FP� laser, and show very good agreement between the theory and experiment. We also compare the RIN spectra of the free-running laser with the injection-locked laser and show an increase of relaxation frequency from 4.5 GHz �free running� to 12 GHz �injection locked�.The experimental setup is shown in Fig. 1. The injection signal from a single-mode distributed-feedback �DFB� mas ter laser passes through an erbium-doped fiber-optical ampli fier �EDFA�. The EDFA is used to amplify the pump DFB laser power and control its injection power into the slave laser over a range up to a few milliwatts. A tunable 3-nm a� Electronic mail: s-chuang@uiuc.edu bandwidth optical filter is used to remove excess signals on the side modes. The injection level is monitored by an opti cal power meter...

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FM noise property of mutually optical injection‐locked semiconductor lasers considering propagation time between lasers

Iiyama

Hayashi

Ida

1991

Electron Comm Jpn Pt II

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Locking bandwidth and FM noise properties of mutually optical injection‐locked semiconductor lasers are described, taking into account an optical delay time between lasers. By introducing a figure of merit of optical injection specifying unilaterality of the optical injection, optical injection‐locking systems with an arbitrary inverse optical injection from a slave laser to a master laser can be described adequately. It is found from the analysis that for a short delay time, the locking bandwidth and the FM noise depend on both the round‐trip phase angle and the figure of merit of optical injection. In the case of a long delay time, the FM noise and the spectral linewidth are reduced significantly with increasing locking bandwidth. Finally, an undulation similar to that in the external cavity semiconductor laser appears in the FM noise spectrum. The experimental results obtained by using semiconductor lasers emitting at 0.83 μm agree well with the analytical results.

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Frequency and intensity noise in injection-locked semiconductor lasers: Theory and experiments

Cited by 79 publications

References 29 publications

Noise characteristics of single-mode semiconductor lasers under external light injection

Noise characteristics of single-mode semiconductor lasers under external light injection

Relative intensity noise characteristics of injection-locked semiconductor lasers

FM noise property of mutually optical injection‐locked semiconductor lasers considering propagation time between lasers

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