2006
DOI: 10.1103/physrevb.74.024507
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Frequency analysis of the dielectric constant ofYBa2Cu3O7Josephson junctions fabricated on bicrystalline substrates

Abstract: We have studied the electromagnetic parameters of YBa 2 Cu 3 O 7 Josephson junctions fabricated on bicrystalline substrates with different angles tilted around the ͓100͔ and ͓001͔ axis. Changing a technological parameter such as the junction width permits change to the resonant frequency of the barrier cavity. This change in the resonance frequency allows one to determine a frequency dependent dispersion relation of the dielectric constant ͑͒. We have explored the proximity to a resonance in the dielectric res… Show more

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Cited by 6 publications
(5 citation statements)
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References 17 publications
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“…Along the quasiparticle branch it is possible to observe current bumps or current steps, indicating the presence of resonances. We will not present data on such resonances in this paper, because we have already analyzed electromagnetic properties of micrometric [100] tilt YBCO grain boundary junctions elsewhere [29][30][31]. Moreover, resonances observed in submicron junctions and DC-SQUIDs made on the same chip will be presented in a separate paper [32].…”
Section: Measurement Setup and Comparison With The Theorymentioning
confidence: 99%
“…Along the quasiparticle branch it is possible to observe current bumps or current steps, indicating the presence of resonances. We will not present data on such resonances in this paper, because we have already analyzed electromagnetic properties of micrometric [100] tilt YBCO grain boundary junctions elsewhere [29][30][31]. Moreover, resonances observed in submicron junctions and DC-SQUIDs made on the same chip will be presented in a separate paper [32].…”
Section: Measurement Setup and Comparison With The Theorymentioning
confidence: 99%
“…Electrodes show critical temperatures in the range of 89.5-91 K, transition widths smaller than 0.2 K, and critical current densities higher than 10 6 A / cm 2 at 77 K. The accurate control of the film growth process in our sputtering system has been previously demonstrated. [10][11][12] 100 nm thick gold layers were deposited on the samples for making low contact resistance paths. Films were patterned obtaining junction widths ranging between 4 and 20 m by Ar ion milling, cooling the sample holder down to −50°C.…”
Section: Methodsmentioning
confidence: 99%
“…In this discussion, particular care has been taken in order to eliminate possible sources of error. 11,12 The dielectric response of the strontium titanate substrate is frequency dependent and at low frequencies the relative dielectric constant can be large ͑below 200 GHz at 4.2 K͒. 18 If such a frequency range is reached, the substrate may affect the capacitance determination of the barrier.…”
Section: B Capacitancementioning
confidence: 99%
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