Frenkel thermal-field effect in MnGaInS4 layered single crystals

Niftiev, N. N.; Тагиев, О. Б.

doi:10.1134/s1063782607010046

Cited by 7 publications

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“…1, a) are known, we managed to find = 0.91 eV. This height is the same as the depth of the potential well for electrons captured by traps, the shape of which may be determined using the following expressions [11]:…”

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confidence: 99%

Investigation of the phenomenon of current transition EuGa-=SUB=-2-=/SUB=-S-=SUB=-4-=/SUB=-:Er-=SUP=-3+-=/SUP=- crystals

Tagiyev O. B.,

Kazimova F. A.,

Hadjiyeva G. S.

et al. 2023

Technical Physics Letters

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The results of studying the static current-voltage characteristics of EuGa2S4:Er3+crystals at room temperature are presented. The mechanism of current passage in them is revealed. The height of the potential barrier at the metal-semiconductor interface (0.9 eV), the relative permittivity of crystals (3.1), and the concentration of traps (N~ 7.14· 1016 cm-3) were calculated, and the shape of the potential well for the electrons trapped in the traps was determined Keywords: current-voltage, metal-semiconductor, crystals, potential barrier,erbium

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Section: Umentioning

confidence: 99%

Investigation of the phenomenon of current transition EuGa-=SUB=-2-=/SUB=-S-=SUB=-4-=/SUB=-:Er-=SUP=-3+-=/SUP=- crystals

Tagiyev O. B.,

Kazimova F. A.,

Hadjiyeva G. S.

et al. 2023

Technical Physics Letters

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“…The electric, photo electric, and optical properties of MnGaInS 4 single crystals were analyzed in [15][16][17][18][19][20].…”

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Optical absorption in layered MnGaInS4 single crystals

Niftiev

Тагиев

2012

Opt. Spectrosc.

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Recently, multicomponent compounds of the AB 2 X 4 type (A is Mn, Fe, Co, or Ni; B is Ga or In; and X is S, Se, or Te) have been of great interest because they can expand the functional possibilities of modern semiconductor electronics [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. These compounds are promising for semiconductor devices of various functional purposes. Photosensitive structures were prepared based on these materials [7,8], heterojunc tions were fabricated on the basis of FeIn 2 Se 4 crystals [9], and nanostructures were synthesized from FeIn 2 S 4 and MnIn 2 S 4 compounds [10-12].New layered semimagnetic MnGaInS 4 semicon ductors were obtained in [13,14]. The electric, photo electric, and optical properties of MnGaInS 4 single crystals were analyzed in [15][16][17][18][19][20].We studied the optical absorption spectra of MnGaInS 4 single crystals in polarized and unpolarized light. MnGaInS 4 single crystals were grown by the Bridgman method. X ray diffraction analysis revealed that they are crystallized into the structure of single packet ZnIn 2 S 4 polytype with the lattice parameters а = 8.31 Å, с = 12.17 Å, and z = 1 (space group Р3m1) [13]. The spectral dependence α(hν) for MnGaInS 4 single crystals was measured in the temperature range of 77-300 K and at photon energies of 2.34-2.80 eV with a system based on an MDR 12 monochromator. Different single crystal samples 10-200 µm thick were investigated.The results of measuring α(hν) in unpolarized light at different temperatures are shown in Fig. 1. It can be seen that the dependence α(hν) becomes blue shifted with a decrease in temperature from 270 to 83 K. In this case, α(hν) in the range of photon energies of 2.37-2.74 eV changes from 2000 to 7000 cm -1 .These results were analyzed according to the theory of indirect and direct optical transitions [21][22][23][24]. The dependence α(hν) can be written aswhere α d , α i , and α b are, respectively, the optical absorption coefficients at direct transitions, at indirect transitions, and under background absorption. The CONDENSED MATTER SPECTROSCOPYAbstract-Optical absorption in MnGaInS 4 single crystals has been studied. Direct and indirect optical tran sitions are found to occur in the range of photon energies of 2.37-2.74 eV and in the temperature range of 83-270 K. The temperature dependence of the band gap has been determined; its temperature coefficients E gd and E gi are -5.06 × 10 -4 and -5.35 × 10 -4 eV/K, respectively. MnGaInS 4 single crystals exhibit anisot ropy in polarized light at the absorption edge; the nature of this anisotropy is explained.

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The physical properties of FeIn 2 S 4 were studied in [1][2][3][4][8][9][10][11][12].

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AC electrical properties of FeIn2S4

et al. 2012

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FeIn 2 S 4 belongs to the ternary compounds of class AB 2 X 4 (where A = Mn, Fe, Co, Ni; B = Ga, In; and X = S, Se, Te) some of which are being extensively studied today [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16]. These compounds are promis ing for lasers, light modulators, photodetectors, and other magnetically controlled functional devices.The physical properties of FeIn 2 S 4 were studied in [1][2][3][4][8][9][10][11][12]. Specifically, the structure and magnetic properties of FeIn 2 S 4 were investigated in [1,4]. It was found that this compound is antiferromagnetic at tem peratures below Néel temperature T N = 4.2 K. In [8], the electrical properties of FeIn 2 S 4 in a static field were explored and the switching effect was discovered. Works [9,10] were devoted to the electrochemical properties of FeIn 2 S 4 nanocrystals. In [11,12], FeIn 2 S 4 based photosensitive structures were fabri cated. However, the ac properties of this compound have not been touched upon. In this work, we report experimental data for the ac electrical performance of FeIn 2 S 4 .FeIn 2 S 4 polycrystals were obtained by direct alloy ing of high purity (99.99%) elements taken in stoichi ometric amounts. It was found by the X ray diffraction method that the polycrystals have a spinel structure with lattice parameter a = 10.62 Å [1, 3]. The electri cal properties were measured on ~0.5 mm thick wafers cut from a FeIn 2 S 4 ingot on which silver paste electrodes (plates) were applied. The capacitors thus obtained were placed in a thermostat, where the tem perature was controllably varied between 293 and 400 K. The temperature was measured accurate to ±0.5 K. The capacitance and resistivity were measured with E7 20 digital immitance meters (frequency range 25-10 6 Hz). The measuring voltage applied to the sample was 1 V. Figure 1 plots capacitance C of the capacitor with FeIn 2 S 4 semiconductor inside versus frequency f at different temperatures. Permittivity ε was calculated from the formula .It was found that ε varies within 300-2800 in the temperature interval 293-373 K and the frequency range 5 × 10 3 -10 6 Hz. It is seen in Fig. 1 that, at tem peratures between 293 and 323 K, the capacitance first slowly decreases in the frequency range 5 × 10 3 -2 × 10 5 Hz and then, in the frequency interval 2.5 × 10 5 -5.0 × 10 5 Hz, a resonance is observed. As the temper ature rises further, the resonance disappears. The res onance effect can be explained in terms of the barrier model [17], since imperfect crystals may contain, along with high resistivity layers with local barrier grains, extended low resistivity barrier layers localized on inhomogeneities, such as dislocations, electrical C εε 0 S/d = Abstract-The frequency and temperature dependences of the ac capacitance and resistivity of FeIn 2 S 4 semiconductors are studied. Resonances are observed at certain temperatures in the frequency range (2.5-5.0) × 10 5 Hz. The permittivity of the crystals and the activation energy of charge carriers are determined. It is found that elec...

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Frenkel thermal-field effect in MnGaInS4 layered single crystals

Cited by 7 publications

References 4 publications

Investigation of the phenomenon of current transition EuGa-=SUB=-2-=/SUB=-S-=SUB=-4-=/SUB=-:Er-=SUP=-3+-=/SUP=- crystals

Investigation of the phenomenon of current transition EuGa-=SUB=-2-=/SUB=-S-=SUB=-4-=/SUB=-:Er-=SUP=-3+-=/SUP=- crystals

Optical absorption in layered MnGaInS4 single crystals

AC electrical properties of FeIn2S4

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