2015
DOI: 10.1002/adma.201502719
|View full text |Cite
|
Sign up to set email alerts
|

Freestanding Artificial Synapses Based on Laterally Proton‐Coupled Transistors on Chitosan Membranes

Abstract: Freestanding synaptic transistors are fabricated on solution-processed chitosan membranes. A short-term memory to long-term memory transition is observed due to proton-related electrochemical doping under repeated pulse stimulus. Moreover, freestanding artificial synaptic devices with multiple presynaptic inputs are investigated, and spiking logic operation and logic modulation are realized.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

7
311
0

Year Published

2016
2016
2019
2019

Publication Types

Select...
10

Relationship

2
8

Authors

Journals

citations
Cited by 384 publications
(326 citation statements)
references
References 34 publications
7
311
0
Order By: Relevance
“…[123,[140][141][142] Also, FETs based on silicon, organic materials, perovskite or carbon nanotube (CNT) have been reported as synaptic elements based on either charge trapping/detrapping mechanism or floating-gate (FG) memory structure, some of which have a structure of multi-gate FET. [120][121][122][123][124][125][126][127][128] Three-terminal FeFET and two-terminal ferroelectric tunnel junction (FTJ) relying on ferroelectric polarization switching have been explored as artificial synapses, where the pulsing scheme needs to be carefully designed to improve the switching symmetry and linearity. [94,103] Similarly, two-terminal spin-transfer torque MRAM (STT-MRAM) based on magnetization switching and multi-terminal magnetic devices based on domain wall motion have also been studied to implement artificial synapses.…”
Section: Artificial Synapsesmentioning
confidence: 99%
“…[123,[140][141][142] Also, FETs based on silicon, organic materials, perovskite or carbon nanotube (CNT) have been reported as synaptic elements based on either charge trapping/detrapping mechanism or floating-gate (FG) memory structure, some of which have a structure of multi-gate FET. [120][121][122][123][124][125][126][127][128] Three-terminal FeFET and two-terminal ferroelectric tunnel junction (FTJ) relying on ferroelectric polarization switching have been explored as artificial synapses, where the pulsing scheme needs to be carefully designed to improve the switching symmetry and linearity. [94,103] Similarly, two-terminal spin-transfer torque MRAM (STT-MRAM) based on magnetization switching and multi-terminal magnetic devices based on domain wall motion have also been studied to implement artificial synapses.…”
Section: Artificial Synapsesmentioning
confidence: 99%
“…Two-terminal memristors or three-terminal transistors can emulate the functions of biological synapses due to their similar transmission characteristics and have been proposed to realize neuromorphic computers. [2][3][4][5][6][7][8] The reproducible gradual tuning of resistance/conductivity of the memristor represents device. Such a simple sandwich structure is good for building large-scale synaptic arrays.…”
Section: Introductionmentioning
confidence: 99%
“…Chitosan can be transformed into chitin and has the same excellent characteristics, such as biocompatibility, biodegradability, non-toxicity, antimicrobial activity, and an outstanding film-forming ability [16,17,18]. Therefore, in previous studies, chitosan has also been used as dielectric layer in organic transistors [19,20]. Yttrium (III) oxide (Y 2 O 3 ) is a type of rare earth oxide that is non-toxic, thermodynamically stabile, stabile at high temperature (T m = 2430 °C), and has a high dielectric constant (ε = 15~18), light transparency, and a linear transmittance in the infrared spectra.…”
Section: Introductionmentioning
confidence: 99%