Free-Running 1550 nm VCSEL for 107 Gb/s Transmission in 997 km PON

Abstract

Abstract-We present a cooler-less, free-running 1550 nm vertical cavity surface emitting laser (VCSEL) directly modulated at 10.7 Gb/s. We also report on error-free transmission through 40 km of standard single-mode optical fiber, achieved without the use of dispersion-mitigation or mid-span amplification. Inverse-dispersion fiber was utilized to realize a dispersion-matched 99.7 km optical access uplink supporting error-free transmission with 27 dB loss margin. These results indicate the feasibility of implementing cooler-less long-wavelength VCSEL devices in long-reach optical access networks.Index Terms-Passive optical network; Vertical cavity surface emitting laser.

Gigabit Access Passive Optical Network Using Wavelength Division Multiplexing—GigaWaM

“…The packaging tolerances were found to be <2 dB loss for < +/− 1 μm lateral offset and 0.5 dB loss at 10 μm distance from PLC. The VCSELs use Vertilas buried tunnel junction technology that allows the VCSELs to lase in the L-band at a speeds of 10 Gb/s [9], [10] and up to 15 Gb/s using four level pulse amplitude modulation [11]. Two type of VCSELs were developed in order to cover the entire L band without suffering from mode hopping.…”

Evaluation of 1.3-㎛ Wavelength VCSELs Grown by Metal Organic Chemical Vapor Deposition for 10 Gb/s Fiber Transmission

“…Recently long-wavelength vertical cavity surface emitting lasers (LW VCSELs) operating at 1.3 μm and 1.55 μm wavelengths have made significant progress for potential applications for optical transmitter sources in local and access networks and in optical interconnects [1][2][3][4][5][6][7][8][9][10]. The importance of the VCSEL devices is better recognized these days as low power consuming optical signal sources in information technology (IT) systems.…”

“…Technologies on the LW VCSELs based on InAlGaAs/InP expitaxial wafers have been developed significantly during the last several years. High-speed modulation and fiber transmission of the devices over long distances up to 100 km have been reported in the literature [11,12]. A vertical stack of appropriately distributed Bragg reflectors (DBRs) made of GaAlAs-InAlAs or InP/Air layers was used for the InAlGaAs/InP LW VCSEL cavities of high temperature characteristics and efficient current confinement schemes with a suitable tunnel junction aperture [13,14].…”