Free Electrons and Resonant Donor State in Gallium Nitride

Perlin, P.; Suski, T.; Teisseyre, H.; Leszczyński, M.; Grzegory, I.; Jun, J.; Boćkowski, M.; Porowski, S.; Bogusławski, P.; Bernholc, Jerry; Moustakas, T. D.

doi:10.4028/www.scientific.net/msf.196-201.23

Cited by 1 publication

(2 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The NID region with a dopant concentration of 1.5 x 10 19 cm -3 can also be identified. Above and below the Mg doped layers, a bright contrast due to the residual n-type doping which is estimated to be 1x10 17 cm -3 can be observed [27]. Figure 3(b) shows the Vdopant profile that was extracted directly from the region indicated in figure 3(a).…”

Section: Resultsmentioning

confidence: 99%

“…To obtain a more quantitative measurement of the active dopants in the layers, the 2D electrostatic potential in the 500 nm thick TEM lamella was simulated using the Nextnano 3 software [28]. As well as the differently doped layers with their corresponding thicknesses, a residual n-type activity with an electron concentration of 1 x 10 17 cm -3 was used in the whole structure [27]. Moreover, the presence of charged surfaces resulting from the presence of damaged surface layers and their interaction with the electron beam was included.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Three-dimensional measurement of Mg dopant distribution and electrical activity in GaN by correlative atom probe tomography and off-axis electron holography

Amichi

Mouton

Russo

et al. 2020

Journal of Applied Physics

View full text Add to dashboard Cite

The distribution and electrical activity of p-type doping (Mg) in gallium nitride (GaN) grown by metal organic chemical vapor deposition was investigated by correlating atom probe tomography (APT) and off-axis electron holography. APT results revealed that high Mg concentrations promote the formation of Mg-rich clusters. This is associated with the formation of pyramidal inversion domains (PIDs). The direct measurement of the doping concentration outside the clusters provided by APT suggests a saturation in the p-type electrical activity for Mg concentrations above 7 x 10 19 cm-3. Maps of the electrostatic potential provided by off-axis electron holography confirm that the highest carrier concentration was achieved in the regions with the highest dopant concentration of 2 x 10 20 cm-3 , despite the presence of a high density of Mgrich clusters revealed by APT. The correlation of these techniques suggests that PIDs are not the major cause of the reduction in electrostatic potential.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%