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Baer, W. S.

doi:10.1103/physrev.144.734

Cited by 119 publications

(39 citation statements)

References 21 publications

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“…at 2 K, decreases with temperature rapidly and varies in accordance with certain power laws above 30 K, where the scattering of electrons by polar optical phonons dominates and results in µ ∝ T −β [19]. The effect of the structural phase transition in STO at ∼105 K on the mobility can be apparently seen from the linear fittings owing to the variation in the activation of phonon modes.…”

Section: Electrical Propertiesmentioning

confidence: 70%

Magnetic-field induced resistivity minimum with in-plane linear magnetoresistance of the Fermi liquid in SrTiO3−xsingle crystals

et al. 2012

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We report novel magnetotransport properties of the low temperature Fermi liquid in SrTiO3−x single crystals. The classical limit dominates the magnetotransport properties for a magnetic field perpendicular to the sample surface and consequently a magnetic-field induced resistivity minimum emerges. While for the field applied in plane and normal to the current, the linear magnetoresistance (MR) starting from small fields (< 0.5 T) appears. The large anisotropy in the transverse MRs reveals the strong surface interlayer scattering due to the large gradient of oxygen vacancy concentration from the surface to the interior of SrTiO3−x single crystals. Moreover, the linear MR in our case was likely due to the inhomogeneity of oxygen vacancies and oxygen vacancy clusters, which could provide experimental evidences for the unusual quantum linear MR proposed by Abrikosov [A. A. Abrikosov, Phys. Rev. B 58, 2788(1998].

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Section: Electrical Propertiesmentioning

confidence: 70%

Magnetic-field induced resistivity minimum with in-plane linear magnetoresistance of the Fermi liquid in SrTiO3−xsingle crystals

et al. 2012

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“…2͑c͒ and 3͑b͔͒. The strength of this absorption is known to scale with the charge carrier concentration [14][15][16] and was thus consistent with the electrical conductivity of the crystals. In addition, an absorption peak at 2.92 eV ͑424 nm͒ was observed ͓see Fig.…”

Section: -13mentioning

confidence: 85%

Effects of hydrogen anneals on oxygen deficient SrTiO3−x single crystals

Jalan

Engel‐Herbert

Mates

et al. 2008

Applied Physics Letters

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The influence of hydrogen gas anneals on the electrical properties of nominally undoped, oxygen-deficient SrTiO3−x single crystals was investigated. Titanium getter layers and vacuum anneals were used to obtain oxygen-deficient SrTiO3−x with a low electrical resistivity. These crystals showed an optical absorption peak at 2.92 eV and strong midinfrared absorption. Subsequent anneals at 800 °C in forming gas, which contained 10% hydrogen, returned the crystals into the insulating, transparent state. The mechanisms by which hydrogen anneals can compensate for the effects of oxygen vacancies in SrTiO3−x are discussed. The results show that forming gas anneals of stoichiometric SrTiO3 can lead to complex electrical conduction behavior.

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“…8, the absorption spectra of the (film+substrate) structure shows a broad peak centered around 2.4 eV, and a smaller one around 1.7 eV, whereas both peaks are absent in the virgin substrate. These peaks lying below the 3.2 eV band-gap are characteristic of reduced STO bulk crystals, and are systematically attributed to the presence of F centers caused by oxygen vacancies 49 . Based on the experimental data that evidence the presence of oxygen vacancies in STO, we propose a simple model to quantify this effect and to explain the macroscopic transport properties including the apparent metalto-semiconducting transition.…”

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confidence: 96%

“…Since the measure of optical properties can reveal the presence of oxygen vacancies in STO 49 , we have measured the optical absorption of the sample grown at 700…”

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confidence: 99%

Two components for one resistivity in LaVO₃/SrTiO₃heterostructure

Rotella¹,

Copie²,

Pautrat³

et al. 2015

J. Phys.: Condens. Matter

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A series of 100 nm LaVO3 thin films have been synthesized on (001)-oriented SrTiO3 substrates using the pulsed laser deposition technique, and the effects of growth temperature are analyzed. Transport properties reveal a large electronic mobility and a non-linear Hall effect at low temperature. In addition, a cross-over from a semiconducting state at high-temperature to a metallic state at low-temperature is observed, with a clear enhancement of the metallic character as the growth temperature increases. Optical absorption measurements combined with the two-bands analysis of the Hall effect show that the metallicity is induced by the diffusion of oxygen vacancies in the SrTiO3 substrate. These results allow to understand that the film/substrate heterostructure behaves as an original semiconducting-metallic parallel resistor, and electronic transport properties are consistently explained. The discovery of unexpected conducting or superconducting behaviors when stacking two band insulators like LaAlO 3 (LAO) and SrTiO 3 (STO) has motivated intense activities to understand these phenomena [1][2][3] . The origin of the highly mobile charge carriers appears the central point of the debate. Interpretations are based on an electronic reconstruction at the interface due to a polar discontinuity between the two insulators 2-5, on cation intermixing or on oxygen vacancies [6][7][8] . It has also been shown that 2D electronic conduction can be observed for peculiar controlled conditions. In particular, the oxygen pressure used during the film growth and the annealing conditions are critical parameters. They allow to tune the amount of oxygen vacancies and the dimensionality of transport properties 9,10 . Using a Mott insulator having a strong coulomb interaction instead of a band insulator should allow to take advantage of the rich properties of electronic correlated systems 11, and other systems such as LaTiO 3 /SrTiO 3 (LTO/STO) have been investigated 12,13 . Similarly to LAO/STO, LTO/STO displays a conducting behavior which was explained by an electronic reconstruction, and superconductivity emerges at low temperature 13. LaVO 3 /SrTiO 3 (LVO/STO) is another interesting oxide heterostructure, LVO being a Mott insulator that exhibits an antiferromagnetic spin order 14. Besides the existence of a 2D electron gaz proposed at the LVO/STO interface 15, new phenomena could arise from the combination of confined carriers at the interface and strong correlations in LVO. Thin films of LVO/STO were synthesized using the pulsed laser deposition (PLD) technique by Hotta et al. 16. Importantly, a pure LVO phase can be formed only under low partial pressure of oxygen (typ. < 10Torr), and a postannealing under oxygen should be avoided since the oxidized form of LaVO 4 is quickly stabilized. Therefore, the problematic of oxygen vacancies is specially relevant for LVO/STO. Regarding the physical properties, this heterostructure presents a conducting behavior and a low temperature non linear Hall effect, both explained by the intrinsic m...

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Free-Carrier Absorption in Reduced SrTiO3

Cited by 119 publications

References 21 publications

Magnetic-field induced resistivity minimum with in-plane linear magnetoresistance of the Fermi liquid in SrTiO3−xsingle crystals

Magnetic-field induced resistivity minimum with in-plane linear magnetoresistance of the Fermi liquid in SrTiO3−xsingle crystals

Effects of hydrogen anneals on oxygen deficient SrTiO3−x single crystals

Two components for one resistivity in LaVO₃/SrTiO₃heterostructure

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Free-Carrier Absorption in Reduced SrTiO3

Cited by 119 publications

References 21 publications

Magnetic-field induced resistivity minimum with in-plane linear magnetoresistance of the Fermi liquid in SrTiO3−xsingle crystals

Magnetic-field induced resistivity minimum with in-plane linear magnetoresistance of the Fermi liquid in SrTiO3−xsingle crystals

Effects of hydrogen anneals on oxygen deficient SrTiO3−x single crystals

Two components for one resistivity in LaVO3/SrTiO3heterostructure

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Product

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Two components for one resistivity in LaVO₃/SrTiO₃heterostructure