Free Carrier Absorption Due to Polar Modes in the III-V Compound Semiconductors

Visvanathan, Susan

doi:10.1103/physrev.120.376

Cited by 94 publications

(28 citation statements)

References 7 publications

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“…Evidently, in the region of higher photon energy the direct allowed transition prevails. Furthermore, the free career absorption f is a weighted sum [16,17] of scattering by acoustic phonon having dependence 1.5 , optical phonons having dependence 2.5 and by ionized impurity having dependency 3.5 , …”

Section: Resultsmentioning

confidence: 99%

Optical absorption in gel grown cadmium tartrate single crystals

Arora¹,

Kothari²,

Patel³

et al. 2006

J. Phys.: Conf. Ser.

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Abstract. Single crystals of cadmium tartrate pentahydrate (CTP) have been grown by the famous gel technique. The slow and controlled reaction between Cd 2+ and (C 4 H 4 O 6 ) 2-ions in silica hydrogel results in formation of the insoluble product, CdC 4 H 4 O 6. 5H 2 O. Optical absorption spectra have been recorded in the range 200 to 2500 nm. Fundamental absorption edge for electronic transition has been analyzed. The direct allowed transition is found to be present in the region of relatively higher photon energy. Analysis of the segments of 1/2 versus h graph has been made to separate individual contribution of phonons. The phonons involved in the indirect transition are found to correspond to 335 and 420 cm -1 . Scattering of charge carriers in the lattice is found due to acoustic phonons.

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Section: Resultsmentioning

confidence: 99%

Optical absorption in gel grown cadmium tartrate single crystals

Arora¹,

Kothari²,

Patel³

et al. 2006

J. Phys.: Conf. Ser.

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“…7). For the high-frequency limit the asymptotic representation of K,(z) can be used and we obtain from (39) the wellknown result [4] 2 ye2n wo 512…”

Section: [4] and [7])mentioning

confidence: 99%

“…However, in contrast to the classical Drude theory which predicts r = 2 for the high-frequency limit cot > 1 (where o is the photon frequency and t the relaxation time of free carriers) the absorption spectra of various polar semiconductors display 2.5 s r s 3.5. First quantum mechanical treatments of the imaginary part of the free-carrier dielectric constant were done by Fan [4]. They calculated the absorption coefficient for scattering of single electrons on acoustic and LO phonons and ionized impurities.…”

Section: Introductionmentioning

confidence: 99%

Theory of Free‐Carrier Infrared Absorption in GaAs

Klelnert¹,

Giehler²

1986

Physica Status Solidi (b)

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Free-carrier infrared absorption spectra in GaAs are calculated for carrier scattering on ionized impurities and phonons due to Coulomb, Frohlich, and deformation potential interaction. Starting from the Kubo formula and applying the diagram technique the interactions of electrons with electrons, phonons, and ionized impurities are taken into account in the random phase approximation (RPA). The obtained absorption spectra exhibit coupled plasmon-phonon peaks which collapse for vanishing electron-LO phonon interaction. By taking into account only plasmon and screening effects of the electron gas the calculated absorption spectra show plasmon bands in the case of carrier-ionized impurity scattering and both, a LO phonon emission edge and weak plasmon-LO phonon combination peaks in the case of carrier-LO phonon scattering. The scattering of electrons by acoustic phonons is not influenced by plasmons. The dependences of various carrier scattering mechanisms on frequency, temperature, and material parameters are determined for n-GaAs.Die Infrarotabsorptionsspektren freier Ladungstrager in Ga As werden fur Ladungstragerstreuung an ionisierten Storstellen und Phononen bei Berucksichtigung von Coulomb-, Frohlich-und Deformationspotentialwechselwirkung berechnet. Ausgehend von der Kubo-Formel werden unter Benutzung der Diagrammtechnik die Wechselwirkungen der Ladungstrager untereinander sowie mit Phononen und ionisierten Storstellen in der RPA-Naherung behandelt. Die erhaltenen Absorptionsspektren zeigen gekoppelte Plasmon-Phonon-Banden, die fur verschwindende Elektron-LOPhonon-Wechselwirkung zerfallen. Werden nur die Plasmon-und Abschirmeffekte des Elektronengases beriicksichtigt, zeigen die Absorptionsspektren im Fall der Ladungstragerstreuung an ionisierten Storstellen Plasmonbanden und im Fall der Ladungstragerstreuung an LO-Phononen sowohl eine LO-Phononenemissionskante als auch schwache Plasmon-Phonon-Kombinationsbanden. Die Streuung von Elektronen an akustischen Phononen wird durch Plasmonen nicht beeinflu&. Die Abhangigkeit der verschiedenen Ladungstragerstreumechanismen von der Frequenz, Temperatur und den Materialparametern wird fur n-GaAs bestimmt.

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“…Some examples are given in literature by studying the different kind of scattering and considering different materials and compounds. For example, Fan and Becker [29] reported a value = 1.5 for the scattering by the acoustic phonons in silicon and germanium, while in [35] the quantum mechanical calculation of the free carriers absorption, considering the scattering by the optical phonons in the III-V compounds, is presented and experimentally verified, finding a value = 2.5. Furthermore [33] shows that the scattering by ionized impurities can lead to = 3 or = 3.5.…”

Section: Free Carriers Absorptionmentioning

confidence: 99%

“…The FCA has been widely studied in the middle of the 20th century, by means of both classical Drude model and quantum one (see, e.g., [28][29][30][31][32][33][34][35][36][37][38][39]). …”

Section: Free Carriers Absorptionmentioning

confidence: 99%

Optical Measurement Techniques of Recombination Lifetime Based on the Free Carriers Absorption Effect

Laurentis

Irace

2014

Journal of Solid State Physics

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We review successful measurement techniques for the evaluation of the recombination properties in semiconductor materials based on the optically induced free carrier absorption. All the methodologies presented share the common feature of exploiting a laser beam to excite electron-hole pairs within the volume of the sample under investigation, while the probing methods can vary according to the different methodology analyzed. As recombination properties are of paramount importance in determining the properties of semiconductor devices (i.e, bipolar transistor gain, power devices switching features, and solar cells efficiency), their knowledge allows for better understanding of experimental results and robust TCAD simulator calibration. Being contactless and applicable without any particular preparation of the sample under investigation, they have been considered attractive to monitor these parameters inline or just after production of many different semiconductor devices.

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Free Carrier Absorption Due to Polar Modes in the III-V Compound Semiconductors

Cited by 94 publications

References 7 publications

Optical absorption in gel grown cadmium tartrate single crystals

Optical absorption in gel grown cadmium tartrate single crystals

Theory of Free‐Carrier Infrared Absorption in GaAs

Optical Measurement Techniques of Recombination Lifetime Based on the Free Carriers Absorption Effect

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