Frederic Henri Moissan, on the 120th anniversary of his birth

Samsonov, G. V.; Obolonchik, V. A.

doi:10.1007/bf00801283

Cited by 5 publications

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“…Впервые открытые Муассаном около 125 лет назад как результат развития высокотемпературной химии, тугоплавкие соединения (карбиды, бориды и др.) [3,4] сразу были отмечены среди множества субстанций благодаря своим уникальным свойствам; несомненно, что в первую очередь -это сверхвысокие температуры плавления, а также твердость этих соединений металлов и неметаллов с бором, углеродом, азотом и др. Дальнейшие исследования показали, что уникальные физикохимические свойства являются следствием формирования в этих соединениях совершенно необычного характера межатомного взаимодействия и химической связи [5][6][7].…”

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Prospects of nanotechnology and materials design on the basis of refractory compounds

Shabalin

2018

Izv. VUZ. Poroshk. Met.

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As a matter of discussion, the prospects for the development of high-temperature ceramic materials science are considered. The paper provides a rationale for developing hetero-modulus ceramic composites as a possibility to implement the unique physicochemical properties of refractory compounds (carbides, nitrides, borides, etc.) under the conditions of their application at high and ultra-high temperatures. The prospects of nanotechnology-based approach to the preparation of similar materials in engineering practice are shown.

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Prospects of nanotechnology and materials design on the basis of refractory compounds

Shabalin

2018

Izv. VUZ. Poroshk. Met.

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“…single transition element and carbon system, though some of them are first identified in oxycarbide or carbonitride forms [1]. In the 1890's and 1900's, Henri Moissan synthesized a good number of refractory TMCs of group 4-6 elements within electric furnace, which was originally an invention for synthesizing artificial diamonds [7] [8]. In the beginning of 20 th century, the attempts of applying pure TMCs, for example WC and W2C, were not very successful as refractory and abrasive tool materials, due to their high brittleness and therefore low damage tolerance [9].…”

Section: Introductionmentioning

confidence: 99%

Thin Film Synthesis of New Nanolaminated Ternary Carbides

Lai¹

2016

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Ternary transition metal carbides with inherently nanolaminated crystal structure are a class of materials with typically higher damage tolerance, better machinability and lower brittleness compared to the binary counterparts, yet retaining their satisfactory electrical and thermal conductivity. Their interesting properties can be related to the laminated structure. Though studies of their properties based on calculations and bulk materials have suggested potential thin film applications, such as high temperature hard coatings and electrical contacts, a relatively small number of these phases have been synthesized as thin films. Investigation of thin film deposition of these inherently nanolaminated materials further the understanding of their phase formation and crystal growth.Motivated by predicted superconductivity and thermoelectric properties of molybdenum carbides and related layered molybdenum compounds, nanolaminated materials in the Mo-Ga-C ternary system were studied. Apart from the previously reported Mo2GaC, a new layered carbide, Mo2Ga2C, was synthesized in both thin film and bulk form with a postulated crystal structure related to Mo2GaC. The proposed structure was further validated by first principles calculations, showing higher stability compared to other crystal structure as well as other competing phases. The calculated lattice parameters were consistent with values from Rietveld analysis of X-ray and neutron diffraction patterns. In addition, both scanning transmission electron microscopy and X-ray photoelectron spectroscopy showed experimental evidence of the close structural-chemical relation between Mo2Ga2C and Mo2GaC.Driven by a need of high temperature protective coatings in nuclear applications, Zr-based nanolaminated carbides have become more attractive. In this work, another nanolaminated carbide, Zr2Al3C4, was synthesized in thin film form by pulsed cathodic arc deposition.Formation of the Zr2Al3C4 phase and its competing phases was studied with X-ray diffraction of thin films deposited with varying incoming flux compositions, temperatures and substrate ii materials. On 4H-SiC(001) substrates, highly phase-pure epitaxial Zr2Al3C4 films were formed, whereas depositions on Al2O3(001) substrates resulted in competing phases. A growth behavior similar to that of nanolaminated Mn+1AXn phases (M is a group 3-7 transition metal; A is commonly a group 13-14 element; X is C or N; n = 1 -3) was observed, despite the structuraland chemical differences between Zr2Al3C4 and MAX phases. Manuscript in Final PreparationIn Paper III, I took part in design of the experiments, and performed a major part of the thin film synthesis. I acquired and analyzed X-ray diffraction patterns, and prepared specimen for other characterization. I wrote a major part of the manuscript. Special thanks to Mark Tucker, our former colleague, who gave me important supports in the first year of my doctoral study, and helps me continuously after he left from IFM.Finally, lots of appreciations to my dearest family, C...

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“…a single transition element and carbon system, though some of them were first identified in oxycarbide or carbonitride forms [1]. In the 1890's and 1900's, Henri Moissan synthesized a good number of refractory TMCs of group 4 -6 elements within an electric furnace originally designed for synthesizing artificial diamonds [10,11]. In the beginning of 20 th century, the attempts to apply pure TMCs, for example WC and W2C, as refractory and abrasive tool materials were not very successful, due to their high brittleness and therefore low damage tolerance [12].…”

Section: A Background Of Transition Metal Carbidesmentioning

confidence: 99%

Phase Formation of Nanolaminated Transition Metal Carbide Thin Films

Lai¹

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The cover image is a simple sketch of structural-chemical relation in between the metal layers in nanolaminated transition metal carbides: Mo2GaC, Mo2Ga2C, and Mo2(Au1-xGax)2C with an in-plane order in the Au-Ga layers, where the last two phases were discovered in this thesis. © Chung-Chuan Lai 2017Printed in Sweden by LiU-Tryck 2017 ISSN 0345-7524 ISBN 978-91-7685-526-3 i AbstractResearch on inherently nanolaminated transition metal carbides is inspired by their unique properties combining metals and ceramics, such as higher damage tolerance, better machinability and lower brittleness compared to the binary counterparts, yet retaining the metallic conductivity. The interesting properties are related to their laminated structure, composed of transition-metal carbide layers interleaved by non-transition-metal (carbide) layers. These materials in thin-film form are particularly interesting for potential applications such as protective coatings and electrical contacts. The goal of this work is to explore nanolaminated transition metal carbides from the aspects of phase formation and crystal growth during thin-film synthesis. This was realized by studying phases in select material systems synthesized from two major approaches, namely, from direct-deposition and post-deposition treatment.The first approach was used in studies on the Mo-Ga-C and Zr-Al-C systems. In the former system, intriguing properties have been predicted for the 3D phases and their 2D derivatives (so called MXenes), while in the latter system, the phases are interesting for nuclear applications.In this work, the discovery of a new Mo-based nanolaminated ternary carbide, Mo2Ga2C, is evidenced from thin-film and bulk processes. Its structure was determined using theoretical and experimental techniques, showing that Mo2Ga2C has Ga double-layers in simple hexagonal stacking between adjacent Mo2C layers, and therefore is structurally very similar to Mo2GaC, except for the additional Ga layers. For the Zr-Al-C system, the optimization of phase composition and structure of Zr2Al3C4 in a thin-film deposition process was studied by evaluating the effect of deposition parameters. I concluded that the formation of Zr2Al3C4 is favored with a plasma flux overstoichiometric in Al, and with a minimum lattice-mismatch to the substrates. Consequently, epitaxial Zr2Al3C4 thin film of high quality were deposited on 4H-SiC(001) substrates at 800 °C.With the approach of post-deposition treatment, the studies were focused on a new method of thermally-induced selective substitution reaction of Au for the non-transition-metal layers in nanolaminated carbides. Here, the reaction mechanism has been explored in Al-containing (Ti2AlC and Ti3AlC2) and Ga-containing (Mo2GaC and Mo2Ga2C) phases. The Al and Ga in ii these phases were selectively replaced by Au while the carbide layers remained intact, resulting in the formation of new layered phases, Ti2Au2C, Ti3Au2C2, Mo2AuC, and Mo2(Au1-xGax)2C, respectively. The substitution reaction was explained by fast outward diffus...

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Frederic Henri Moissan, on the 120th anniversary of his birth

Cited by 5 publications

References 0 publications

Prospects of nanotechnology and materials design on the basis of refractory compounds

Prospects of nanotechnology and materials design on the basis of refractory compounds

Thin Film Synthesis of New Nanolaminated Ternary Carbides

Phase Formation of Nanolaminated Transition Metal Carbide Thin Films

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