Franco and the Axis Stigma

Pike, David Wingeate

doi:10.1177/002200948201700301

Cited by 11 publications

(7 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…At high frequencies, the films experience completelyshorted, grain boundary electrical barriers and become electrically conductive, resulting in negative capacitance and associated resonance in capacitance. A similar phenomenon was observed in polycrystalline ZnO varistors at frequencies >1 MHz [21,22] and this effect was attributed to the type and density of defect states that are formed at the depletion regions of the grain boundary of the varistor ceramics [21,22].…”

Section: High-frequency Analysis (>1 Mhz)supporting

confidence: 66%

“…It is this part of quadrature current, J q , which yields the anomalous capacitance. Detailed calculations by Pike [22] show that when majority carriers alone are important in the barrier charge trapping, the anomalous capacitance always auguments the normal capacitance (C > 0). However, when minority carriers are also involved, it is possible to have the sign of the effect reversed (C < 0), and thus have the apparent capacitance become negative [21,22].…”

Section: High-frequency Analysis (>1 Mhz)mentioning

confidence: 99%

See 1 more Smart Citation

Dielectric relaxation and defect analysis of Ta₂O₅thin films

Ezhilvalavan¹,

Tsai²,

Tseng

2000

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

The presence of defects in thin-film dielectrics often leads to dielectric relaxation as a function of frequency, in which the dielectric constant decreases and the loss tangent increases with increasing frequency. Dielectric relaxation results in charge storage capacity reduction under dynamic random access memory operating conditions. In this work, the dielectric relaxation behaviour of dc reactive sputtered Ta2O5 thin film was investigated. Using dielectric dispersion measurements as a function of frequency (100 Hz⩽f⩽10 MHz) and temperature (27 °C⩽T⩽150 °C), we determined the dielectric relaxation and defect quantity of the films and propose an equivalent circuit on the basis of complex capacitance, admittance and impedance spectral studies.

show abstract

Section: High-frequency Analysis (>1 Mhz)supporting

confidence: 66%

Section: High-frequency Analysis (>1 Mhz)mentioning

confidence: 99%

Dielectric relaxation and defect analysis of Ta₂O₅thin films

Ezhilvalavan¹,

Tsai²,

Tseng

2000

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…[7−10] While from the dynamic response, more parameters about charged carriers, such as their density, energy level and capture cross section can be obtained. [11,12] Different from the deep level transient spectroscopy and thermally stimulated current measurements, the broadband dielectric spectroscopy has advantages of wide measuring temperature and frequency range, simplicity and nondestructive nature. Moreover, information about deep bulk trap and interface state, such as trap density, capture cross section, activation energy and relaxation time can all be calculated from the dielectric spectra.…”

Section: Introductionmentioning

confidence: 99%

Electronic relaxation of deep bulk trap and interface state in ZnO ceramics

Yang¹,

Ding²,

Cheng³

2011

Chinese Phys. B

View full text Add to dashboard Cite

This paper investigates the electronic relaxation of deep bulk trap and interface state in ZnO ceramics based on dielectric spectra measured in a wide range of temperature, frequency and bias, in addition to the steady state response. It discusses the nature of net current flowing over the barrier affected by interface state, and then obtains temperature-dependent barrier height by approximate calculation from steady I-V (current-voltage) characteristics. Additional conductance and capacitance arising from deep bulk trap relaxation are calculated based on the displacement of the cross point between deep bulk trap and Fermi level under small AC signal. From the resonances due to deep bulk trap relaxation on dielectric spectra, the activation energies are obtained as 0.22 eV and 0.35 eV, which are consistent with the electronic levels of the main defect interstitial Zn and vacancy oxygen in the depletion layer. Under moderate bias, another resonance due to interface relaxation is shown on the dielectric spectra. The DC-like conductance is also observed in high temperature region on dielectric spectra, and the activation energy is much smaller than the barrier height in steady state condition, which is attributed to the displacement current coming from the shallow bulk trap relaxation or other factors.

show abstract

“…According to him, even Jordana, the neutralist minister, presented strong continuities with the Germanophile policies of Serrano Suñer. 9 However, between roughly 2008 and 2019, historians have clearly identified Francoist Spain as a covert ally of the Axis and established the waning of this support sometime between January and September of 1943; a shift marked by the battle of Stalingrad, the fall of fascist Italy and -contrary to Pike's thesis -Jordana's neutralist policy. 10 However, Hendaye has continued to cast a long shadow over the study of German-Spanish relations during the Second World War.…”

mentioning

confidence: 99%

Introduction: Spanish-German Relations during the Second World War

Sotorrío

2019

Journal of Contemporary History

View full text Add to dashboard Cite

The Second World War has had a profound effect on recent history, how we understand Europe and what we consider necessary to build stable democratic societies. At a juncture in which the most important legacy of that conflict, the European Union, is being questioned and where nationalist populism is on the rise, it seems particularly important to look back and re-evaluate the global conflict in a new light. Indeed, the conflict left no European nation untouched. The Spanish case shows how the war had a serious impact not only on the belligerent nations but also neutral and non-belligerent ones. This special section aims to explore the dynamics of relations between Francoist Spain and Nazi Germany during the Second World War, and in doing so contribute to a better understanding of the conflict. The analyses brought together in these pages aim to place Francoist Spain in the broader context of the global conflict, focusing particularly on the transnational contacts between fascist and para-fascist movements, 1 Spain's engagement with the Nazi-fascist European project and the role of neutral countries in the midst of total war. Rather than focusing excessively on Spain's potential entry into the Second World War, the different contributions look more broadly at Spanish-German relations in this period. Such a viewpoint illuminates not only the role Spain had within Nazi foreign policy or the inner workings of Francoism and Nazism, but also key themes in the field of European history.

show abstract

Franco and the Axis Stigma

Cited by 11 publications

References 0 publications

Dielectric relaxation and defect analysis of Ta₂O₅thin films

Dielectric relaxation and defect analysis of Ta₂O₅thin films

Electronic relaxation of deep bulk trap and interface state in ZnO ceramics

Introduction: Spanish-German Relations during the Second World War

Contact Info

Product

Resources

About

Franco and the Axis Stigma

Cited by 11 publications

References 0 publications

Dielectric relaxation and defect analysis of Ta2O5thin films

Dielectric relaxation and defect analysis of Ta2O5thin films

Electronic relaxation of deep bulk trap and interface state in ZnO ceramics

Introduction: Spanish-German Relations during the Second World War

Contact Info

Product

Resources

About

Dielectric relaxation and defect analysis of Ta₂O₅thin films

Dielectric relaxation and defect analysis of Ta₂O₅thin films